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Volume 23; Issue 12
Main
Solid-State Electronics
Volume 23; Issue 12
Solid-State Electronics
Volume 23; Issue 12
1
The optical (free-carrier) absorption of a hole-electron plasma in silicon
C.M. Horwitz
,
R.M. Swanson
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 360 KB
Your tags:
english, 1980
2
Noise in phosphorus-implanted buried channel MOS transistors
S.T. Liu
,
O.N. Tufte
,
A. van der Ziel
,
S.Y. Pai
,
W. Larson
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 118 KB
Your tags:
english, 1980
3
A simple model of the threshold voltage of short and narrow channel MOSFETs
Gérard Merckel
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 564 KB
Your tags:
english, 1980
4
On the separation of quasi-Fermi levels and the boundary conditions for junction devices
Alan H. Marshak
,
Karel M. van Vliet
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 568 KB
Your tags:
english, 1980
5
Electric measurement of impurity concentration in p-type epitaxially grown and ion-implanted base regions
A.Z. Incecik
,
H.W. Pötzl
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 499 KB
Your tags:
english, 1980
6
Study of the TRIM transistor
S.M. Abu Nailah
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 524 KB
Your tags:
english, 1980
7
Annealing of SiSiO2 interface states using Ar-ion-implant-damage-gettering
B. Golja
,
A.G. Nassibian
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 612 KB
Your tags:
english, 1980
8
Noise in phototransistor optical isolators
K.B. Cook
,
W. Yeh
,
V.W. Ruwe
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 468 KB
Your tags:
english, 1980
9
Comparison of Thai's theory with experimental boron doping profiles in silicon, diffused from boron nitride sources
K.P. Frohmader
,
L. Baumbauer
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 223 KB
Your tags:
english, 1980
10
Comparison of spreading resistance correction factor algorithms using model data
John Albers
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 841 KB
Your tags:
english, 1980
11
Current gain of high-low junction emitter bipolar transistor structure with uniformly doped profiles
Ching-Yuan Wu
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 604 KB
Your tags:
english, 1980
12
p-i-n diode recovery storage time
J.A.G. Slatter
,
J.P. Whelan
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 808 KB
Your tags:
english, 1980
13
List of contents and author index volume 23, 1980
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 883 KB
Your tags:
english, 1980
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