Volume 23; Issue 3

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Solid-State Electronics
Volume 23; Issue 3

Solid-State Electronics

Volume 23; Issue 3

1

Low field study of P+NN+ or P+PN+ structures in the forward direction

J.-C. Manifacier, J. Jimenez, J.P. Fillard, H.K. Henisch

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 189 KB

english, 1980

2

The open-circuit voltage of back-surface-field (BSF) p-n junction solar cells in concentrated sunlight

Ching-Yuan Wu, Wen-Zen Shen

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 655 KB

english, 1980

3

Dynamic minority-carrier storage in TRAPATT diodes

Richard A. Kiehl

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 632 KB

english, 1980

4

An experimental technique for the study of non-avalanche charge injection or trapping in MIS structures

J. Kolk, E. Heasell

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 361 KB

english, 1980

5

An investigation of the interface state density in metal-silicon nitride-silicon structures

J.P. Bigorgne, M. Favre, G. Salace, J. Despujols

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 428 KB

english, 1980

6

Microplasma effects in gallium arsenide epilayers and FETs

Christos Tsironis

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 586 KB

english, 1980

7

The barrier height change and current transport phenomena with the presence of interfacial layer in MIS Schottky barrier solar cells

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 512 KB

english, 1980

8

A new approach to fabrication of GaAs JFETs

Y. Ishii, S. Nojima, M. Ida, K. Kurumada

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 508 KB

english, 1980

9

The influence of a voltage ramp on the measurement of I–V characteristics of a solar cell

Oldwig von Roos

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 321 KB

english, 1980

10

The effect of photogenerated carriers on the mean time delay for avalanche breakdown in p-n junctions

Nicol McGruer, D.K. Reinhard

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 227 KB

english, 1980

11

The influence of surface states on a pulsed MOS capacitor recombination lifetime measurement

M.W. Hillen, R.B.M. Girisch

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 613 KB

english, 1980

12

IC-VCE characteristics of double diffused bipolar transistors under low level injection

David Scott, David Roulston

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 558 KB

english, 1980

13

Charge injection from a surface depletion region—The Al2O3-silicon system

J. Kolk, E.L. Heasell

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 569 KB

english, 1980

14

Modelling of scaled-down MOS transistors

F.M. Klaassen, W.C.J. de Groot

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 604 KB

english, 1980

15

Aluminum-silicon ohmic contact on “shallow” n+p junctions

M. Finetti, P. Ostoja, S. Solmi, G. Soncini

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 630 KB

english, 1980

16

Post-breakdown bulk oscillations in gold-doped silicon p+−i−n+ double-injection diodes

Bhaskar Mantha, H.Thurman Henderson

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 597 KB

english, 1980

17

On the shift of threshold voltage of nonuniformly doped MOS transistors

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 126 KB

english, 1980

18

The effect of dopant distribution and built-in electric field on the transit time of a transistor

N.K.D. Chowdhury, F. Ghosh, T.B. Biswas

Journal:

Solid-State Electronics

Year:

1980

Language:

english

File:

PDF, 293 KB

english, 1980