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Volume 23; Issue 3
Main
Solid-State Electronics
Volume 23; Issue 3
Solid-State Electronics
Volume 23; Issue 3
1
Low field study of P+NN+ or P+PN+ structures in the forward direction
J.-C. Manifacier
,
J. Jimenez
,
J.P. Fillard
,
H.K. Henisch
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 189 KB
Your tags:
english, 1980
2
The open-circuit voltage of back-surface-field (BSF) p-n junction solar cells in concentrated sunlight
Ching-Yuan Wu
,
Wen-Zen Shen
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 655 KB
Your tags:
english, 1980
3
Dynamic minority-carrier storage in TRAPATT diodes
Richard A. Kiehl
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 632 KB
Your tags:
english, 1980
4
An experimental technique for the study of non-avalanche charge injection or trapping in MIS structures
J. Kolk
,
E. Heasell
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 361 KB
Your tags:
english, 1980
5
An investigation of the interface state density in metal-silicon nitride-silicon structures
J.P. Bigorgne
,
M. Favre
,
G. Salace
,
J. Despujols
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 428 KB
Your tags:
english, 1980
6
Microplasma effects in gallium arsenide epilayers and FETs
Christos Tsironis
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 586 KB
Your tags:
english, 1980
7
The barrier height change and current transport phenomena with the presence of interfacial layer in MIS Schottky barrier solar cells
Juh Tzeng Lue
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 512 KB
Your tags:
english, 1980
8
A new approach to fabrication of GaAs JFETs
Y. Ishii
,
S. Nojima
,
M. Ida
,
K. Kurumada
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 508 KB
Your tags:
english, 1980
9
The influence of a voltage ramp on the measurement of I–V characteristics of a solar cell
Oldwig von Roos
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 321 KB
Your tags:
english, 1980
10
The effect of photogenerated carriers on the mean time delay for avalanche breakdown in p-n junctions
Nicol McGruer
,
D.K. Reinhard
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 227 KB
Your tags:
english, 1980
11
The influence of surface states on a pulsed MOS capacitor recombination lifetime measurement
M.W. Hillen
,
R.B.M. Girisch
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 613 KB
Your tags:
english, 1980
12
IC-VCE characteristics of double diffused bipolar transistors under low level injection
David Scott
,
David Roulston
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 558 KB
Your tags:
english, 1980
13
Charge injection from a surface depletion region—The Al2O3-silicon system
J. Kolk
,
E.L. Heasell
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 569 KB
Your tags:
english, 1980
14
Modelling of scaled-down MOS transistors
F.M. Klaassen
,
W.C.J. de Groot
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 604 KB
Your tags:
english, 1980
15
Aluminum-silicon ohmic contact on “shallow” n+p junctions
M. Finetti
,
P. Ostoja
,
S. Solmi
,
G. Soncini
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 630 KB
Your tags:
english, 1980
16
Post-breakdown bulk oscillations in gold-doped silicon p+−i−n+ double-injection diodes
Bhaskar Mantha
,
H.Thurman Henderson
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 597 KB
Your tags:
english, 1980
17
On the shift of threshold voltage of nonuniformly doped MOS transistors
Tung H. Weng
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 126 KB
Your tags:
english, 1980
18
The effect of dopant distribution and built-in electric field on the transit time of a transistor
N.K.D. Chowdhury
,
F. Ghosh
,
T.B. Biswas
Journal:
Solid-State Electronics
Year:
1980
Language:
english
File:
PDF, 293 KB
Your tags:
english, 1980
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