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Volume 27; Issue 4
Main
Solid-State Electronics
Volume 27; Issue 4
Solid-State Electronics
Volume 27; Issue 4
1
On the current-voltage characteristics of epitaxial Schottky barrier diodes
C.T. Chuang
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 496 KB
Your tags:
english, 1984
2
The correlation of channel mobility with interface state measurements on InP MOSFET structures
D.C. Cameron
,
B.J. Foreman
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 481 KB
Your tags:
english, 1984
3
Influence of metal sheet resistivity on the IV-characteristics of metal-semiconductor diodes
B. Elfsten
,
H. Norde
,
P.A. Tove
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 157 KB
Your tags:
english, 1984
4
Convergence properties of Newton's method for the solution of the semiconductor transport equations and hybrid solution techniques for multidimensional simulation of VLSI devices
Osman Ersed Akcasu
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 968 KB
Your tags:
english, 1984
5
Electrical characteristics of r.f.-sputtered CdTe thin-films for photovoltaic applications
M.B. Das
,
S.V. Krishnaswamy
,
Ronald Petkie
,
P. Swab
,
K. Vedam
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 806 KB
Your tags:
english, 1984
6
In situ X-ray diffraction study of melting in gold contacts to gallium arsenide
Xian-Fu Zeng
,
D.D.L. Chung
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 561 KB
Your tags:
english, 1984
7
High field transport in GaAs, InP and InAs
Kevin Brennan
,
Karl Hess
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 1014 KB
Your tags:
english, 1984
8
Changes in breakdown characteristics of planar Al/nSi Schottky diodes during the postmetallization heat treatment
D. Dascalu
,
Gh. Brezeanu
,
M. Suciu
,
P.A. Dan
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 836 KB
Your tags:
english, 1984
9
A modeling technique for characterizing ion-implanted material using C–V and DLTS data
J.M. Golio
,
R.J. Trew
,
G.N. Maracas
,
H. Lefevre
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 679 KB
Your tags:
english, 1984
10
High frequency capacitance-voltage and conductance-voltage characteristics of d.c. sputter deposited a-carbon/silicon MIS structures
A.Azim Khan
,
John A. Woollam
,
Y. Chung
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 670 KB
Your tags:
english, 1984
11
A suggested method for the determination of the charge density in the interfacial layer of a schottky-barrier MIS diode
A.N. Daw
,
A.K. Datta
,
M.C. Ash
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 109 KB
Your tags:
english, 1984
12
Temperature distribution and power dissipation in MOSFETs
A. Schütz
,
S. Selberherr
,
H.W. Pötzl
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 223 KB
Your tags:
english, 1984
13
Method for reduction of hysteresis effects in MIS measurements
K. Heilig
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 198 KB
Your tags:
english, 1984
14
Editorial—Software section
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 111 KB
Your tags:
english, 1984
15
The consequences of the application of a floating gate on d.c.-MISFET characteristics
J.A. Voorthuyzen
,
P. Bergveld
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 461 KB
Your tags:
english, 1984
16
Equivalent circuit and minority carrier lifetime in heterostructure light emitting diodes
K. Atallah
,
H. Martinot
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 326 KB
Your tags:
english, 1984
17
Use of the modulating differentiation technique to study breakdown inhomogeneities in avalanche transit time silicon diode
R.V. Konakova
,
V.V. Rybalka
,
L.V. Scherbina
,
J.L. Zaitsevskii
Journal:
Solid-State Electronics
Year:
1984
Language:
english
File:
PDF, 305 KB
Your tags:
english, 1984
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