Volume 27; Issue 4

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Solid-State Electronics
Volume 27; Issue 4

Solid-State Electronics

Volume 27; Issue 4

1

On the current-voltage characteristics of epitaxial Schottky barrier diodes

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 496 KB

english, 1984

2

The correlation of channel mobility with interface state measurements on InP MOSFET structures

D.C. Cameron, B.J. Foreman

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 481 KB

english, 1984

3

Influence of metal sheet resistivity on the IV-characteristics of metal-semiconductor diodes

B. Elfsten, H. Norde, P.A. Tove

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 157 KB

english, 1984

4

Convergence properties of Newton's method for the solution of the semiconductor transport equations and hybrid solution techniques for multidimensional simulation of VLSI devices

Osman Ersed Akcasu

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 968 KB

english, 1984

5

Electrical characteristics of r.f.-sputtered CdTe thin-films for photovoltaic applications

M.B. Das, S.V. Krishnaswamy, Ronald Petkie, P. Swab, K. Vedam

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 806 KB

english, 1984

6

In situ X-ray diffraction study of melting in gold contacts to gallium arsenide

Xian-Fu Zeng, D.D.L. Chung

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 561 KB

english, 1984

7

High field transport in GaAs, InP and InAs

Kevin Brennan, Karl Hess

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 1014 KB

english, 1984

8

Changes in breakdown characteristics of planar Al/nSi Schottky diodes during the postmetallization heat treatment

D. Dascalu, Gh. Brezeanu, M. Suciu, P.A. Dan

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 836 KB

english, 1984

9

A modeling technique for characterizing ion-implanted material using C–V and DLTS data

J.M. Golio, R.J. Trew, G.N. Maracas, H. Lefevre

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 679 KB

english, 1984

10

High frequency capacitance-voltage and conductance-voltage characteristics of d.c. sputter deposited a-carbon/silicon MIS structures

A.Azim Khan, John A. Woollam, Y. Chung

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 670 KB

english, 1984

11

A suggested method for the determination of the charge density in the interfacial layer of a schottky-barrier MIS diode

A.N. Daw, A.K. Datta, M.C. Ash

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 109 KB

english, 1984

12

Temperature distribution and power dissipation in MOSFETs

A. Schütz, S. Selberherr, H.W. Pötzl

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 223 KB

english, 1984

13

Method for reduction of hysteresis effects in MIS measurements

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 198 KB

english, 1984

14

Editorial—Software section

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 111 KB

english, 1984

15

The consequences of the application of a floating gate on d.c.-MISFET characteristics

J.A. Voorthuyzen, P. Bergveld

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 461 KB

english, 1984

16

Equivalent circuit and minority carrier lifetime in heterostructure light emitting diodes

K. Atallah, H. Martinot

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 326 KB

english, 1984

17

Use of the modulating differentiation technique to study breakdown inhomogeneities in avalanche transit time silicon diode

R.V. Konakova, V.V. Rybalka, L.V. Scherbina, J.L. Zaitsevskii

Journal:

Solid-State Electronics

Year:

1984

Language:

english

File:

PDF, 305 KB

english, 1984