Volume 42; Issue 6

Main
Solid-State Electronics
Volume 42; Issue 6

Solid-State Electronics

Volume 42; Issue 6

1

A simple approach to the capacitance technique for determination of interface state density of a metal–semiconductor contact

Santosh Pandey, S. Kal

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 226 KB

english, 1998

2

Explicit formulation of a series resistance correction procedure for MOSFET parameter extraction and its accuracy analysis

G.F Niu, J.D Cressler, S.J Mathew

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 107 KB

english, 1998

3

Interconnection capacitance models for VLSI circuits

Shyh-Chyi Wong, Patrick S. Liu, Jien-Wen Ru, Shi-Tron Lin

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 660 KB

english, 1998

4

Manufacture of AlGaInP visible light-emitting diodes by MOCVD & VPE

Zeng Qingke, Zeng Xianfu, Liao Changjun, Liu Songhao

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 145 KB

english, 1998

5

Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

Wei-Kai Shih, Everett X. Wang, Srinivas Jallepalli, Francisco Leon, Christine M. Maziar, Al F. Tasch Jr.

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 536 KB

english, 1998

6

Effects of screening on the two-dimensional electron transport properties in modulation doped heterostructures

O. Sen, C. Besikci, B. Tanatar

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 376 KB

english, 1998

7

Dielectric relaxation of amorphous and textured MIS-capacitor thin films

Floirán Fernández-Gutiérrez, O Sánchez Garrido, M Hernández-Vélez, R.M Bueno, J.M Martı́nez-Duart

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 247 KB

english, 1998

8

Influence of external bias on photoelectric properties of silicon MIS/IL structures

V.Yu. Yerokhov, I.I. Melnyk

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 459 KB

english, 1998

9

Electrical characterization of anodically grown native oxide on GaInSb

H.X Yuan, D Grubisic, T.T.S Wong

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 381 KB

english, 1998

10

Low-frequency 1/f noise model for short-channel LDD MOSFETs

Sheng-Lyang Jang, Heng-Kuen Chen, Man-Chun Hu

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 443 KB

english, 1998

11

Plasma charging damage during over-etch time of aluminum

Hyungcheol Shin, Geunsook Park, Chenming Hu

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 209 KB

english, 1998

12

On the anomalous behavior of the relative amplitude of RTS noise

L.K.J. Vandamme, D. Sodini, Z. Gingl

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 215 KB

english, 1998

13

Impact of energy band-gap grading on responsivity of an AlxGa1−xN ultraviolet p–n detector

M.J. Malachowski

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 196 KB

english, 1998

14

Improved reliability of NO treated NH3-nitrided oxide with regard to O2 annealing

M.K Mazumder, A Teramoto, M Sekine, S Kawazu, H Koyama

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 354 KB

english, 1998

15

Single contact electron beam induced currents (SCEBIC) in semiconductor junctions. Part I: Quantitative verification of SCEBIC model

S. Kolachina, J.C.H. Phang, D.S.H. Chan

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 307 KB

english, 1998

16

Performance of a p-channel heterojunction fet with p+-GaAs selectively grown contact layers for GaAs complementary ICs

Naoki Furuhata, Masahiro Fujii, Shuji Asai, Tadashi Maeda, Yasuo Ohno

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 1.01 MB

english, 1998

17

Multiple-cell square-type layout design for output transistors in submicron CMOS technology to save silicon area

Ming-Dou Ker, Chung-Yu Wu, Chien-Chang Huang, Tung-Yang Chen

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 1.28 MB

english, 1998

18

The small signal AC impedance of a short p–n junction diode

G. Garcia-Belmonte, J. Bisquert, V. Caselles

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 176 KB

english, 1998

19

IMPATT oscillations in fast recovery diodes due to temporarily charged radiation-induced deep levels

J. Lutz, W. Südkamp, W. Gerlach

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 381 KB

english, 1998

20

Threshold voltage and charge control considerations in double quantum wellSi/Si1−xGex p-type MOSFETs

M.Y.A. Yousif, O. Nur, O. Chretien, Y. Fu, M. Willander

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 316 KB

english, 1998

21

Device degradation during low temperature ECR-CVD. Part I: GaAs MESFETs

J.W. Lee, K.D. MacKenzie, D. Johnson, R.J. Shul, S.J. Pearton, C.R. Abernathy, F. Ren

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 485 KB

english, 1998

22

Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs

J.W. Lee, K.D. MacKenzie, D. Johnson, R.J. Shul, S.J. Pearton, C.R. Abernathy, F. Ren

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 360 KB

english, 1998

23

Low temperature ECR-CVD of SiNX for III-V device passivation

J.W Lee, K MacKenzie, D Johnson, R.J Shul, S.J Pearton, F Ren

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 220 KB

english, 1998

24

Schottky barrier heights of In0.5(AlxGa1−x)0.5P (0≤x≤1) lattice matched to GaAs

Y.C Wang, J.M Kuo, F Ren, J.R Lothian, W.E Mayo

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 337 KB

english, 1998

25

High frequency CV measurements of SiC MOS capacitors

S Berberich, P Godignon, M.L Locatelli, J Millán, H.L Hartnagel

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 309 KB

english, 1998

26

Polarization control in vertical-cavity surface emitting laser using uniaxial stress

Achyut Kumar Dutta, Kenichi Kasahara

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 281 KB

english, 1998

27

InSb infrared p–i–n photodetectors grown on GaAs coated Si substrates by molecular beam epitaxy

Ahmet Tevke, Cengiz Besikci, Chris Van Hoof, G. Borghs

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 394 KB

english, 1998

28

An optical technique to measure the bulk lifetime and the surface recombination velocity in silicon samples based on a laser diode probe system

A Cutolo, S Daliento, A Sanseverino, G.F Vitale, L Zeni

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 183 KB

english, 1998

29

Device degradation during low temperature ECR-CVD. PART III: GaAs/InGaP HEMTs

J.W Lee, K.D MacKenzie, D Johnson, R.J Shul, S.J Pearton, C.R Abernathy, F Ren

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 285 KB

english, 1998