Volume 43; Issue 4

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Solid-State Electronics
Volume 43; Issue 4

Solid-State Electronics

Volume 43; Issue 4

1

Characterization of GaP pyramidal textured p–n junctions

X Mei, H.E Ruda, T Berdinskihk, M Buchanan

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 484 KB

english, 1999

2

0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

S.F Yoon, B.P Gay, H.Q Zheng, K.S Ang, H Wang, G.I Ng

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 248 KB

english, 1999

3

Experimental determination of the effective mobility in NMOSFETs: a comparative study

J. Banqueri, J.A. López-Villanueva, P. Cartujo-Cassinello, S. Rodrı́guez, J.E. Carceller

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 287 KB

english, 1999

4

Impurity bound polaron effects on the second harmonic generation in quantum well wires

Kang-Xian Guo, Chuan-Yu Chen

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 131 KB

english, 1999

5

Li-ion battery operated power amplifier MMICs utilizing SrTiO3 capacitors and heterojunction FETs for PDC and CDMA cellular phones

N Iwata, K Yamaguchi, T.B Nishimura, K Takemura, Y Miyasaka

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 487 KB

english, 1999

6

Structural and photoelectric studies on double barrier quantum well infrared detectors

Wen-Gang Wu, De-Sheng Jiang, Li-Qui Cui, Chun-Ying Song, Yan Zhuang

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 196 KB

english, 1999

7

Abnormal extracted value of effective channel length for off-set gate MOSFET

Kazuo Terada, Kei-ichi Itoh, Koji Tanaka

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 145 KB

english, 1999

8

Low frequency excess noise measurements in high frequency polysilicon emitter bipolar transistors

Jean Marc Routoure, Jacques Lepaisant, Daniel Bloyet, Serge Bardy, Christelle Biard, Laurent Gambus, Jacques Lebailly

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 445 KB

english, 1999

9

1/f Noise in amorphous silicon thin film transistors: effect of scaling down

J Rhayem, D Rigaud, M Valenza, N Szydlo, H Lebrun

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 278 KB

english, 1999

10

Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation

L.K.J. Vandamme, L.B. Kiss, O.L.J. Stoelinga

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 145 KB

english, 1999

11

Reconstruction of doping profiles in semiconductor materials using optical tomography

Luigi Zeni, Romeo Bernini, Rocco Pierri

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 365 KB

english, 1999

12

Simulation of Si power MOSFET under cryogenic conditions

R.J. Mauriello, K.B. Sundaram, L.C. Chow

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 307 KB

english, 1999

13

Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)

Shiou-Ying Cheng, Jung-Hui Tsai, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 273 KB

english, 1999

14

Discussion

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 89 KB

english, 1999

15

Discussion

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 111 KB

english, 1999

16

Measurement of interface states parameters of Si1−x−yGexCy/TiW Schottky contacts using Schottky capacitance spectroscopy

M Zamora, G.K Reeves, G Gazecki, J Mi, C.Y Yang

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 824 KB

english, 1999

17

Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs0.69P0.31 substrates with application to visible light-emitting diodes

Lung-Chien Chen, Tzu-Chieh Hsu, Meng-Chyi Wu

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 241 KB

english, 1999

18

A high speed and low power SOI inverter using active body-bias

Joonho Gil, Minkyu Je, Jongho Lee, Hyungcheol Shin

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 575 KB

english, 1999

19

I–V methods to extract junction parameters with special emphasis on low series resistance

A Kaminski, J.J Marchand, A Laugier

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 125 KB

english, 1999

20

A numerical study of AlGaAs/GaAs HBTs

Bin Li, Sheila Prasad, Li-Wu Yang, S.C Wang

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 235 KB

english, 1999

21

An analytical model for the saturation characteristics of bipolar-mode static induction transistors

Jianhong Yang, Siyuan Li, Tianmin Wang

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 177 KB

english, 1999

22

Extraction of the trap density and mobility in poly-CdSe thin films

M.J Lee, Shih-Chung Lee

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 144 KB

english, 1999

23

Direct extraction of semiconductor device parameters using lateral optimization method

A Ortiz-Conde, Yuansheng Ma, J Thomson, E Santos, J.J Liou, F.J Garcı́a Sánchez, M Lei, J Finol, P Layman

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 207 KB

english, 1999

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