Volume 47; Issue 8

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Solid-State Electronics
Volume 47; Issue 8

Solid-State Electronics

Volume 47; Issue 8

1

Monte Carlo analysis of the implant dose sensitivity in 0.1 μm NMOSFET

H.C Srinivasaiah, Navakanta Bhat

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 185 KB

english, 2003

2

GaInP/GaAs heterojunction bipolar transistor with carbon-doped base layer grown by solid source molecular beam epitaxy using carbon tetrabromide

R. Zhang, S.F. Yoon, K.H. Tan, Z.Z. Sun, Q.F. Huang, J. Jiang, L.H. Lee

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 205 KB

english, 2003

3

Avalanche transistor operation at extreme currents: physical reasons for low residual voltages

Sergey N. Vainshtein, Valentin S. Yuferev, Juha T. Kostamovaara

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 187 KB

english, 2003

4

Effects of first rapid thermal annealing temperature on Co silicide formation

H.J. Peng, Z.X. Shen, E.H. Lim, C.W. Lai, R. Liu, A.T.S. Wee, A. Sameer, J.Y. Dai, B.C. Zhang, J.Z. Zheng

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 296 KB

english, 2003

5

Zinc-blende ZnS under pressure: predicted electronic properties

F. Benmakhlouf, A. Bechiri, N. Bouarissa

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 133 KB

english, 2003

6

Accessing transmission-mode dispersion in super-prisms

Y Du, A.F.J Levi

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 276 KB

english, 2003

7

Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation

David C.T Or, P.T Lai, J.K.O Sin, J.P Xu

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 213 KB

english, 2003

8

Steam-induced interface improvement of N2O-nitrided SiO2 grown on 6H–SiC

J.P Xu, P.T Lai, C.L Chan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 125 KB

english, 2003

9

Effect of post oxidation annealing on VCSEL performance

N.C. Das, P. Newman

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 165 KB

english, 2003

10

Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region

T Masui, S Khunkhao, K Kobayashi, S Niemcharoen, S Supadech, K Sato

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 200 KB

english, 2003

11

The characteristics of InGaAs/GaAs modulation-doped photodetectors with two absorption bands

Li-Zen Hsieh, Ping-Yu Kuei

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 122 KB

english, 2003

12

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Ru Huang, Xing Zhang, RuQi Han, YangYuan Wang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 228 KB

english, 2003

13

Enhanced emission in organic light-emitting diodes using Ta2O5 buffer layers

Huei-Tzong Lu, Meiso Yokoyama

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 159 KB

english, 2003

14

Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs

S.H. Olsen, A.G. O’Neill, D.J. Norris, A.G. Cullis, K. Fobelets, H.A. Kemhadjian

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 274 KB

english, 2003

15

Two-dimensional hydrodynamic model including inertia effects in carrier momentum for power millimetre-wave semi-conductor devices

M. Rousseau, J.D. Delemer, J.C. De Jaeger, F. Dessenne

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 468 KB

english, 2003

16

A simple quantum model for the MOS structure in accumulation mode

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 181 KB

english, 2003

17

Si film electrical characterization in SOI substrates by the HgFET technique

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 737 KB

english, 2003

18

Simulation of nonequilibrium thermal effects in power LDMOS transistors

A Raman, D.G Walker, T.S Fisher

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 174 KB

english, 2003

19

Influence of gettering and passivation on uniformity of the electrical parameters in monolithic multicrystalline silicon solar cell

He Wang, Hong Yang, Huacong Yu, Guangde Chen

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 118 KB

english, 2003

20

GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors

A Teke, S Dogan, F Yun, M.A Reshchikov, H Le, X.Q Liu, H Morkoç, S.K Zhang, W.B Wang, R.R Alfano

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 305 KB

english, 2003

21

High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC

Jihyun Kim, F. Ren, A.G. Baca, R.D. Briggs, S.J. Pearton

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 500 KB

english, 2003

22

New procedure for the extraction of a-Si:H TFTs model parameters in the subthreshold region

L. Reséndiz, M. Estrada, A. Cerdeira

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 186 KB

english, 2003

23

Erratum to “Preface” [Solid-State Electronics 2003;47(3):385]

Journal:

Solid-State Electronics

Year:

2003

File:

PDF, 31 KB

2003

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