Volume 48; Issue 8

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Solid-State Electronics
Volume 48; Issue 8

Solid-State Electronics

Volume 48; Issue 8

1

Strain adjustment with thin virtual substrates

E. Kasper, K. Lyutovich

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 390 KB

english, 2004

2

Control over strain relaxation in Si-based heterostructures

Natalia F Izyumskaya, Vitaly S Avrutin, Anatoly F Vyatkin

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 496 KB

english, 2004

3

Engineering strained silicon on insulator wafers with the Smart CutTM technology

B. Ghyselen, J.-M. Hartmann, T. Ernst, C. Aulnette, B. Osternaud, Y. Bogumilowicz, A. Abbadie, P. Besson, O. Rayssac, A. Tiberj, N. Daval, I. Cayrefourq, F. Fournel, H. Moriceau, C. Di Nardo, F. Andri

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 893 KB

english, 2004

4

Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

Gianni Taraschi, Arthur J. Pitera, Eugene A. Fitzgerald

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 477 KB

english, 2004

5

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H.-J. Herzog, U. König, H. von Känel

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 417 KB

english, 2004

6

Monte Carlo modeling of the electron mobility in strained Si1−xGex layers on arbitrarily oriented Si1−yGey substrates

S. Smirnov, H. Kosina

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 394 KB

english, 2004

7

The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

J.R. Watling, L. Yang, M. Boriçi, R.C.W. Wilkins, A. Asenov, J.R. Barker, S. Roy

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 602 KB

english, 2004

8

Simulation and modelling of transport properties in strained-Si and strained-Si/SiGe-on-insulator MOSFETs

J.B. Roldán, F. Gámiz

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 406 KB

english, 2004

9

Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

K. Fobelets, W. Jeamsaksiri, C. Papavasilliou, T. Vilches, V. Gaspari, J.E. Velazquez-Perez, K. Michelakis, T. Hackbarth, U. König

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 284 KB

english, 2004

10

Strained Si MOSFETs on relaxed SiGe platforms: performance and challenges

S. Chattopadhyay, L.D. Driscoll, K.S.K. Kwa, S.H. Olsen, A.G. O'Neill

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 441 KB

english, 2004

11

Buried-channel SiGe HMODFET device potential for micropower applications

A Vilches, Kostis Michelakis, Kristel Fobelets, David Haigh, Christos Papavassiliou, T Hackbath, U Konig

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 381 KB

english, 2004

12

Large-signal modelling including low-frequency dispersion of n-channel SiGe MODFETs and MMIC applications

Ingmar Kallfass, Thomas J. Brazil, Breandan OhAnnaidh, Peter Abele, Thomas Hackbarth, Marco Zeuner, Ulf König, Hermann Schumacher

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 557 KB

english, 2004

13

Strained Si HFETs for microwave applications: state-of-the-art and further approaches

M. Enciso Aguilar, M. Rodriguez, N. Zerounian, F. Aniel, T. Hackbarth, H.-J. Herzog, U. König, S. Mantl, B. Holländer, D. Chrastina, G. Isella, H. von Känel, K. Lyutovich, M. Oehme

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 731 KB

english, 2004

14

Power analysis of strained-Si devices/circuits

Keunwoo Kim, Rajiv V. Joshi, Ching-Te Chuang

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 337 KB

english, 2004

15

Relaxation mechanism of low temperature SiGe/Si(0 0 1) buffer layers

Lili Vescan, Susanne Wickenhäuser

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 426 KB

english, 2004

16

Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices

R. Delhougne, G. Eneman, M. Caymax, R. Loo, P. Meunier-Beillard, P. Verheyen, W. Vandervorst, K. De Meyer, M. Heyns

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 632 KB

english, 2004

17

Strained Si on insulator technology: from materials to devices

T.A Langdo, M.T Currie, Z.-Y Cheng, J.G Fiorenza, M Erdtmann, G Braithwaite, C.W Leitz, C.J Vineis, J.A Carlin, A Lochtefeld, M.T Bulsara, I Lauer, D.A Antoniadis, M Somerville

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 726 KB

english, 2004

18

Gate dielectrics on strained-Si/SiGe heterolayers

C.K. Maiti, S.K. Samanta, S. Chatterjee, G.K. Dalapati, L.K. Bera

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 669 KB

english, 2004

19

Contact metallization on strained-Si

A.R Saha, S Chattopadhyay, C.K Maiti

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 502 KB

english, 2004

20

Investigation of strained Si/SiGe devices by MC simulation

C. Jungemann, N. Subba, J.-S. Goo, C. Riccobene, Q. Xiang, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 433 KB

english, 2004

21

Special issue on strained-si heterostructures and devices

Chinmay K Maiti

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 201 KB

english, 2004

22

WHERE ARE WE HEADING?

Journal:

Solid-State Electronics

Year:

2004

File:

PDF, 232 KB

2004