Volume 49; Issue 10

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Solid-State Electronics
Volume 49; Issue 10

Solid-State Electronics

Volume 49; Issue 10

1

Floating contact transmission line modelling: An improved method for ohmic contact resistance measurement

Melania Lijadi, Fabrice Pardo, Nathalie Bardou, Jean-Luc Pelouard

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 508 KB

english, 2005

2

The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection

Chia-Hong Huang, Jenn-Gwo Hwu

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 300 KB

english, 2005

3

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Y. Guhel, B. Boudart, N. Vellas, C. Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, M. Germain

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 548 KB

english, 2005

4

Novel structure of white organic electroluminescent devices

Chuan-Cheng Tsou, Huei-Tzong Lu, Meiso Yokoyama

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 339 KB

english, 2005

5

Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes

David Crouse, Ravina Solomon

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 342 KB

english, 2005

6

Modeling and simulation of STacked Gate Oxide (STGO) architecture in Silicon-On-Nothing (SON) MOSFET

Poonam Kasturi, Manoj Saxena, R.S. Gupta

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 802 KB

english, 2005

7

Forward-current electroluminescence from GaN/ZnO double heterostructure diode

Ya.I. Alivov, Ü. Özgür, S. Dogˇan, C. Liu, Y. Moon, X. Gu, V. Avrutin, Y. Fu, H. Morkoç

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 299 KB

english, 2005

8

Effects of dielectric dispersion in multiplier chips

Tanmoy Maity, D. Ghosh, C.R. Mahata

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 362 KB

english, 2005

9

A sum-over-paths impulse-response moment-extraction algorithm for RLC IC-interconnect networks

Y.L. Le Coz, D. Krishna, G. Hariharan, D.M. Petranovic

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 443 KB

english, 2005

10

N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers

P.M. Mooney, K. Rim, S.H. Christiansen, K.K. Chan, J.O. Chu, J. Cai, H. Chen, J.L. Jordan-Sweet, Y.Y. Yang, D.C. Boyd

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 458 KB

english, 2005

11

A unified charge model comprising both 2D quantum mechanical effects in channels and in poly-silicon gates of MOSFETs

Zhang Dawei, Zhang Hao, Yu Zhiping, Tian Lilin

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 485 KB

english, 2005

12

A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation

Michelly de Souza, Marcelo Antonio Pavanello, Benjamín Iñíguez, Denis Flandre

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 469 KB

english, 2005

13

Electron trapping effects in C- and Fe-doped GaN and AlGaN

Olena Lopatiuk, Andrei Osinsky, Amir Dabiran, Konstantin Gartsman, Isai Feldman, Leonid Chernyak

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 346 KB

english, 2005

14

Prediction of plasma processes using neural network and genetic algorithm

Byungwhan Kim, Jungki Bae

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 284 KB

english, 2005

15

A comparative study of different contact resistance test structures dedicated to the power process technology

Slimane Oussalah, Boualem Djezzar, Robert Jerisian

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 354 KB

english, 2005

16

High performance analog operation of double gate transistors with the graded-channel architecture at low temperatures

Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Raskin, Denis Flandre

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 364 KB

english, 2005

17

Continuous wave operation of a 250 mW AlGaAs laser diode

T.G. Kim, D.S. Kim, K.C. Kim, K.Y. Jang, G.W. Moon, J.I. Park, S.W. Lee, M.D. Kim, J.H. Koh

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 386 KB

english, 2005

18

Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

S. Arulkumaran, T. Egawa, H. Ishikawa

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 563 KB

english, 2005

19

A scalable substrate network for compact modelling of deep trench insulated HBT

S. Fregonese, D. Celi, T. Zimmer, C. Maneux, P.Y. Sulima

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 368 KB

english, 2005

20

A modified transferred-electron high-field mobility model for GaN devices simulation

Valentin O. Turin

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 147 KB

english, 2005

21

A spice-like reliability model for deep-submicron CMOS technology

Z. Cui, J.J. Liou

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 233 KB

english, 2005

22

Performances of CYTOPTM low-k dielectric layer bridged GaAs-based enhancement mode pHEMT for wireless power application

C.H. Lin, F.K. Oshita, M.J. Jennison, P.C. Chang, J. Wei, C. Wilhelmi, M. Bramlett, R. Parkhurst, S.D. Strathman, M. Maple

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 366 KB

english, 2005

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