Volume 50; Issue 6

Main
Solid-State Electronics
Volume 50; Issue 6

Solid-State Electronics

Volume 50; Issue 6

1

Study of leakage-induced photon emission processes in sub-90 nm CMOS devices

Y. Weizman, M. Gurfinkel, A. Margulis, Y. Fefer, Y. Shapira, E. Baruch

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 289 KB

english, 2006

2

Bandwidth enhancement of Fabry-Perot quantum-well lasers by injection-locking

Xiaomin Jin, Shun-Lien Chuang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 312 KB

english, 2006

3

Schottky barrier height in GaN/AlGaN heterostructures

A.F.M. Anwar, Elias W. Faraclas

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 139 KB

english, 2006

4

AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics

Elias W. Faraclas, A.F.M. Anwar

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 213 KB

english, 2006

5

Microstructural characterization of quantum dots with type-II band alignments

W.L. Sarney, J.W. Little, S.P. Svensson

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 268 KB

english, 2006

6

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

H.D.B. Gottlob, T. Echtermeyer, T. Mollenhauer, J.K. Efavi, M. Schmidt, T. Wahlbrink, M.C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.-J. Osten, A. Fissel

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 433 KB

english, 2006

7

Annealing of ion-implanted SiC by laser-pulse-exposure-generated shock-waves

K.B. Mulpuri, S.B. Qadri, J. Grun, C.K. Manka, M.C. Ridgway

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 217 KB

english, 2006

8

Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

Ch. Pandis, N. Brilis, D. Tsamakis, H.A. Ali, S. Krishnamoorthy, A.A. Iliadis

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 146 KB

english, 2006

9

Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs

Qingqing Liang, Ramkumar Krithivasan, Adnan Ahmed, Yuan Lu, Ying Li, John D. Cressler, Guofu Niu, Jae-Sung Rieh, Greg Freeman, Dave Ahlgren, Alvin Joseph

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 296 KB

english, 2006

10

Two-dimensional quantum mechanical modeling for multiple-channel FET

Joong-Sik Kim, Taeyoung Won

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 490 KB

english, 2006

11

Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics

Emad Hamadeh, Norman G. Gunther, Darrell Niemann, Mahmud Rahman

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 1.80 MB

english, 2006

12

Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices

Darrell Niemann, Norman Gunther, Charles Kwong, Mark Barycza, Mahmud Rahman

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 677 KB

english, 2006

13

Development of high frequency ZnO/SiO2/Si Love mode surface acoustic wave devices

S. Krishnamoorthy, A.A. Iliadis

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 300 KB

english, 2006

14

Quantum mechanical modeling of MOSFET gate leakage for high-k gate dielectrics

Huixian Wu, Yijie (Sandy) Zhao, Marvin H. White

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

15

High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

S. Yagi, M. Shimizu, M. Inada, Y. Yamamoto, G. Piao, H. Okumura, Y. Yano, N. Akutsu, H. Ohashi

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 368 KB

english, 2006

16

Electrical characteristic enhancement of metal–oxide–semiconductor devices by incorporating HfON buffer layer at HfTaSiON/Si interface

Chin-Lung Cheng, Kuei-Shu Chang-Liao, Hsin-Chun Chang, Tien-Ko Wang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 393 KB

english, 2006

17

Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications

Sung-Yong Chung, Si-Young Park, Jeffrey W. Daulton, Ronghua Yu, Paul R. Berger, Phillip E. Thompson

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 165 KB

english, 2006

18

Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification

Zhi Chen, Jun Guo

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 381 KB

english, 2006

19

Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs

D.P. Ioannou, R. Mishra, D.E. Ioannou, S.T. Liu, H.L. Hughes

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

20

Foreword

Agis A. Iliadis, Phillip E. Thompson

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 47 KB

english, 2006

21

High temperature characterization of SiC BJTs for power switching applications

K. Sheng, L.C. Yu, J. Zhang, J.H. Zhao

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 498 KB

english, 2006

22

Fully integrated 512 Mb DRAMs with HSG-merged-AHO cylinder capacitor

Seong-Goo Kim, Chang-Suk Hyun, Don Park, Tai-Heui Cho, Jong-Gyu Suk, Hyeong-Sun Hong, Kang-Yoon Lee, Kyung-Seok Oh

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 295 KB

english, 2006

23

Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics

P. Srinivasan, E. Simoen, R. Singanamalla, H.Y. Yu, C. Claeys, D. Misra

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 318 KB

english, 2006

24

CMOS and post-CMOS on-chip microwave pulse power detectors

Woochul Jeon, John Melngailis

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 354 KB

english, 2006

25

Large-signal modeling of SOI MESFETs

A. Balijepalli, R. Vijayaraghavan, J. Ervin, J. Yang, S.K. Islam, T.J. Thornton

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 547 KB

english, 2006

26

IFC - Editorial Board

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 84 KB

english, 2006

27

Novel dielectrics for gate oxides and surface passivation on GaN

B.P. Gila, G.T. Thaler, A.H. Onstine, M. Hlad, A. Gerger, A. Herrero, K.K. Allums, D. Stodilka, S. Jang, B. Kang, T. Anderson, C.R. Abernathy, F. Ren, S.J. Pearton

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 260 KB

english, 2006

28

Highly reliable high-k gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region

Kunihiko Iwamoto, Wataru Mizubayashi, Arito Ogawa, Toshihide Nabatame, Hideki Satake, Akira Toriumi

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 271 KB

english, 2006

29

High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors

S.W. Cho, J.H. Yun, D.H. Jun, J.I. Song, I. Adesida, N. Pan, J.H. Jang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 434 KB

english, 2006

30

Monitoring the self-heating in a high frequency GaN HFET

S.P. McAlister, J.A. Bardwell, S. Haffouz, H. Tang

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 143 KB

english, 2006

31

Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs

H.C. Lin, P.D. Ye, G.D. Wilk

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 134 KB

english, 2006

32

A novel tri-control gate surrounding gate transistor (TCG-SGT) nonvolatile memory cell for flash memory

Takuya Ohba, Hiroki Nakamura, Hiroshi Sakuraba, Fujio Masuoka

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 233 KB

english, 2006

33

Efficient THz generation and frequency upconversion in GaP crystals

Yujie J. Ding, Wei Shi

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

34

Influence of SOI-generated stress on BiCMOS performance

Ted Johansson, B. Gunnar Malm, Hans Norström, Ulf Smith, Mikael Östling

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 469 KB

english, 2006

35

Polysilicon TFT circuits on flexible stainless steel foils

Matias N. Troccoli, Abbas Jamshidi Roudbari, Ta-Ko Chuang, Miltiadis K. Hatalis

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 856 KB

english, 2006

36

Interface characterization of molecular-monolayer/SiO2 based molecular junctions

C.A. Richter, C.A. Hacker, L.J. Richter, O.A. Kirillov, J.S. Suehle, E.M. Vogel

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 322 KB

english, 2006

37

Breaking the theoretical limit of SiC unipolar power device – A simulation study

L.C. Yu, K. Sheng

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 278 KB

english, 2006

38

Structural and rectifying junction properties of self-assembled ZnO nanoparticles in polystyrene diblock copolymers on (1 0 0)Si substrates

H.A. Ali, A.A. Iliadis, L.J. Martinez-Miranda, U. Lee

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 481 KB

english, 2006

39

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5)B GaAs substrates by molecular beam epitaxy

Y. Higuchi, S. Osaki, T. Kitada, S. Shimomura, Y. Takasuka, M. Ogura, S. Hiyamizu

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 381 KB

english, 2006

40

25-nm programmable virtual source/drain MOSFETs using a twin SONOS memory structure

Woo Young Choi, Byung Yong Choi, Dong-Won Kim, Choong-Ho Lee, Donggun Park, Jong Duk Lee, Byung-Gook Park

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 438 KB

english, 2006

41

Novel reconfigurable semiconductor photonic crystal-MEMS device

Weimin Zhou, David M. Mackie, Monica Taysing-Lara, Gerard Dang, Peter G. Newman, Stefan Svensson

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 539 KB

english, 2006

42

Physical and electrical characteristics of high-κ gate dielectric Hf(1−x)LaxOy

X.P. Wang, M.F. Li, Albert Chin, C.X. Zhu, Jun Shao, W. Lu, X.C. Shen, X.F. Yu, Ren Chi, C. Shen, A.C.H. Huan, J.S. Pan, A.Y. Du, Patrick Lo, D.S.H. Chan, Dim-Lee Kwong

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 558 KB

english, 2006

43

CMOS reliability issues for emerging cryogenic Lunar electronics applications

Tianbing Chen, Chendong Zhu, Laleh Najafizadeh, Bongim Jun, Adnan Ahmed, Ryan Diestelhorst, Gustavo Espinel, John D. Cressler

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 506 KB

english, 2006