Volume 51; Issue 4

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Solid-State Electronics
Volume 51; Issue 4

Solid-State Electronics

Volume 51; Issue 4

1

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

J. Knoch, S. Mantl, J. Appenzeller

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 394 KB

english, 2007

2

Capacitance measurements in nanometric silicon devices using Coulomb blockade

M. Hofheinz, X. Jehl, M. Sanquer, O. Cueto, G. Molas, M. Vinet, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 449 KB

english, 2007

3

A perspective on today’s scaling challenges and possible future directions

Robert H. Dennard, Jin Cai, Arvind Kumar

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 365 KB

english, 2007

4

Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes

T. Echtermeyer, H.D.B. Gottlob, T. Wahlbrink, T. Mollenhauer, M. Schmidt, J.K. Efavi, M.C. Lemme, H. Kurz

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 188 KB

english, 2007

5

Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation

A. Bournel, V. Aubry-Fortuna, J. Saint-Martin, P. Dollfus

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 325 KB

english, 2007

6

Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors

C. Claeys, E. Simoen, P. Srinivasan, D. Misra

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 621 KB

english, 2007

7

Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

Quentin Rafhay, M. Florian Beug, Russell Duane

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 319 KB

english, 2007

8

Experimental determination of the channel backscattering coefficient on 10–70 nm-metal-gate Double-Gate transistors

Vincent Barral, T. Poiroux, M. Vinet, J. Widiez, B. Previtali, P. Grosgeorges, G. Le Carval, S. Barraud, J.L. Autran, D. Munteanu, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 380 KB

english, 2007

9

Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study

K. Samsudin, F. Adamu-Lema, A.R. Brown, S. Roy, A. Asenov

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 647 KB

english, 2007

10

Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs

N. Barin, P. Palestri, C. Fiegna

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 299 KB

english, 2007

11

Phonon scattering in Si-based nanodevices

L. Donetti, F. Gámiz, N. Rodriguez, F.G. Ruiz

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 472 KB

english, 2007

12

Editorial Board

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 78 KB

english, 2007

13

Impact of fin width on digital and analog performances of n-FinFETs

V. Subramanian, A. Mercha, B. Parvais, J. Loo, C. Gustin, M. Dehan, N. Collaert, M. Jurczak, G. Groeseneken, W. Sansen, S. Decoutere

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 1010 KB

english, 2007

14

Foreword

Simon Deleonibus

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 65 KB

english, 2007

15

A new analytical model for the energy dispersion in two-dimensional hole inversion layers

Marco De Michielis, David Esseni, Pierpaolo Palestri, Luca Selmi

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 245 KB

english, 2007

16

Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides

Thierry Contaret, Touati Boutchacha, Gérard Ghibaudo, Frédéric Bœuf, Thomas Skotnicki

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 599 KB

english, 2007

17

CMOS 6-T SRAM cell design subject to “atomistic” fluctuations

B. Cheng, S. Roy, A. Asenov

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 1.61 MB

english, 2007

18

Comparative study of the fabricated and simulated Impact Ionization MOS (IMOS)

F. Mayer, C. Le Royer, G. Le Carval, C. Tabone, L. Clavelier, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 392 KB

english, 2007

19

Device structures and carrier transport properties of advanced CMOS using high mobility channels

S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane, S. Sugahara

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 1.18 MB

english, 2007

20

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

O. Engström, B. Raeissi, S. Hall, O. Buiu, M.C. Lemme, H.D.B. Gottlob, P.K. Hurley, K. Cherkaoui

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 229 KB

english, 2007