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Volume 53; Issue 1
Main
Solid-State Electronics
Volume 53; Issue 1
Solid-State Electronics
Volume 53; Issue 1
1
Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits
Ruonan Wang
,
Yong Cai
,
Kevin J. Chen
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 291 KB
Your tags:
english, 2009
2
4H–SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain
Huili Zhu
,
Xiaping Chen
,
Jiafa Cai
,
Zhengyun Wu
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 297 KB
Your tags:
english, 2009
3
Surface potential equation for bulk MOSFET
G. Gildenblat
,
Z. Zhu
,
C.C. McAndrew
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 232 KB
Your tags:
english, 2009
4
PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations
W. Wu
,
X. Li
,
G. Gildenblat
,
G.O. Workman
,
S. Veeraraghavan
,
C.C. McAndrew
,
R. van Langevelde
,
G.D.J. Smit
,
A.J. Scholten
,
D.B.M. Klaassen
,
J. Watts
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 708 KB
Your tags:
english, 2009
5
Fully-depleted Ge interband tunnel transistor: Modeling and junction formation
Qin Zhang
,
Surajit Sutar
,
Thomas Kosel
,
Alan Seabaugh
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 476 KB
Your tags:
english, 2009
6
Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices
I. Pappas
,
G. Ghibaudo
,
C.A. Dimitriadis
,
C. Fenouillet-Béranger
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 169 KB
Your tags:
english, 2009
7
Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs
S. Jit
,
Prashant Kumar Pandey
,
Pramod Kumar Tiwari
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 243 KB
Your tags:
english, 2009
8
Study of leakage current and breakdown issues in 4H–SiC unterminated Schottky diodes
P.G. Muzykov
,
A.V. Bolotnikov
,
T.S. Sudarshan
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 1.00 MB
Your tags:
english, 2009
9
Electron transport properties of bulk mercury–cadmium–telluride at 77 K
C. Palermo
,
L. Varani
,
J.C. Vaissière
,
E. Starikov
,
P. Shiktorov
,
V. Gružinskis
,
B. Azaïs
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 431 KB
Your tags:
english, 2009
10
Steady state analysis of optical bistability in distributed coupling coefficient DFB semiconductor laser amplifiers
M. Saeed Tahvili
,
M. Hossein Sheikhi
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 600 KB
Your tags:
english, 2009
11
A computational load-pull method with harmonic loading for high-efficiency investigations
O. Bengtsson
,
L. Vestling
,
J. Olsson
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 822 KB
Your tags:
english, 2009
12
Relative intensity noise study in the injection-locked integrated electroabsorption modulator-lasers
Xiaomin Jin
,
Bennet Yun Tarng
,
Shun-Lien Chuang
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 390 KB
Your tags:
english, 2009
13
Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1−y buffers by molecular beam epitaxy
Mantu K. Hudait
,
M. Brenner
,
S.A. Ringel
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 601 KB
Your tags:
english, 2009
14
Editorial Board
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 66 KB
Your tags:
english, 2009
15
Transient charging current measurements and modelling in silicon nanocrystal floating gate devices
A. Beaumont
,
A. Souifi
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 411 KB
Your tags:
english, 2009
16
Modeling short-channel effects in channel thermal noise and induced-gate noise in MOSFETs in the NQS regime
Sunil Vallur
,
R.P. Jindal
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 244 KB
Your tags:
english, 2009
17
A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs
Feilong Liu
,
Jian Zhang
,
Frank He
,
Feng Liu
,
Lining Zhang
,
Mansun Chan
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 285 KB
Your tags:
english, 2009
18
Low voltage charge-balanced capacitance–voltage conversion circuit for one-side-electrode-type fluid-based inclination sensor
Asrulnizam Bin Abd Manaf
,
Yoshinori Matsumoto
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 775 KB
Your tags:
english, 2009
19
Analytic resolution of Poisson–Boltzmann equation in nanometric semiconductor junctions
Hugues Murray
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 982 KB
Your tags:
english, 2009
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