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Volume 53; Issue 4
Main
Solid-State Electronics
Volume 53; Issue 4
Solid-State Electronics
Volume 53; Issue 4
1
Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
S. Monaghan
,
P.K. Hurley
,
K. Cherkaoui
,
M.A. Negara
,
A. Schenk
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 827 KB
Your tags:
english, 2009
2
Impact of variability on the performance of SOI Schottky barrier MOSFETs
S.F. Feste
,
M. Zhang
,
J. Knoch
,
S. Mantl
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 573 KB
Your tags:
english, 2009
3
Simulation of self-heating effects in different SOI MOS architectures
M. Braccioli
,
G. Curatola
,
Y. Yang
,
E. Sangiorgi
,
C. Fiegna
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 621 KB
Your tags:
english, 2009
4
High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack
Tao Chuan Lim
,
Olivier Rozeau
,
Christel Buj
,
Michel Paccaud
,
Sylvie Lepilliet
,
Gilles Dambrine
,
François Danneville
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 846 KB
Your tags:
english, 2009
5
Low-voltage scaling limitations for nano-scale CMOS LSIs
Kiyoo Itoh
,
Masashi Horiguchi
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 1.20 MB
Your tags:
english, 2009
6
Innovative devices for integrated circuits – A design perspective
D. Schmitt-Landsiedel
,
C. Werner
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 1.09 MB
Your tags:
english, 2009
7
Foreword
Luca Selmi
,
David Esseni
,
Pierpaolo Palestri
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 109 KB
Your tags:
english, 2009
8
Editorial Board
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 66 KB
Your tags:
english, 2009
9
Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs
Roberto Grassi
,
Stefano Poli
,
Elena Gnani
,
Antonio Gnudi
,
Susanna Reggiani
,
Giorgio Baccarani
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 967 KB
Your tags:
english, 2009
10
On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs
D. Rideau
,
M. Feraille
,
M. Michaillat
,
Y.M. Niquet
,
C. Tavernier
,
H. Jaouen
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 1.94 MB
Your tags:
english, 2009
11
Multi-Subband Monte Carlo simulations of degradation due to fin thickness fluctuations in FinFETs
N. Serra
,
P. Palestri
,
G.D.J. Smit
,
L. Selmi
Journal:
Solid-State Electronics
Year:
2009
Language:
english
File:
PDF, 800 KB
Your tags:
english, 2009
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