Volume 64; Issue 1

Solid-State Electronics

Volume 64; Issue 1
2

A THz-range planar NDR device utilizing ballistic electron acceleration in GaN

Year:
2011
Language:
english
File:
PDF, 769 KB
english, 2011
3

An analytical compact model for Schottky-barrier double gate MOSFETs

Year:
2011
Language:
english
File:
PDF, 559 KB
english, 2011
10

Four-point probe characterization of 4H silicon carbide

Year:
2011
Language:
english
File:
PDF, 592 KB
english, 2011
15

14.2 W/mm internally-matched AlGaN/GaN HEMT for X-band applications

Year:
2011
Language:
english
File:
PDF, 664 KB
english, 2011
16

Editorial Board

Year:
2011
Language:
english
File:
PDF, 64 KB
english, 2011