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Volume 9; Issue 10

Solid-State Electronics

Volume 9; Issue 10
1

Failure mechanisms in thin film field effect transistors

K.K. Reinhartz, V.A. Russell
Journal:
Solid-State Electronics
Year:
1966
Language:
english
File:
PDF, 844 KB
english, 1966
2

Electrical properties of BaPbO3 ceramics

Hiroshi Ikushima, Shigeru Hayakawa
Journal:
Solid-State Electronics
Year:
1966
Language:
english
File:
PDF, 326 KB
english, 1966
4

Solid-to-solid diffusion in the gallium arsenide device technology

W. v. Muench, H. Statz
Journal:
Solid-State Electronics
Year:
1966
Language:
english
File:
PDF, 289 KB
english, 1966
8

Influence of non-uniform thickness of dielectric layers on capacitance and tunnel currents

Z. Hurych
Journal:
Solid-State Electronics
Year:
1966
Language:
english
File:
PDF, 1.07 MB
english, 1966
9

Characteristics of injecting point contacts on semiconductors—I In darkness

I. Braun, H.K. Henisch
Journal:
Solid-State Electronics
Year:
1966
Language:
english
File:
PDF, 631 KB
english, 1966
10

Complementary MOS transistors

M.H. White, J.R. Cricchi
Journal:
Solid-State Electronics
Year:
1966
Language:
english
File:
PDF, 1.31 MB
english, 1966
11

Non-destructive detection of phosphorus oxide layers on semiconductor wafers

E.A. Corl, S.L. Silverman, Y.S. Kim
Journal:
Solid-State Electronics
Year:
1966
Language:
english
File:
PDF, 2.41 MB
english, 1966
12

Efficiency of a gallium arsenide phosphide solar cell at high light intensities

A.S. Epstein, M.C. DeBaets
Journal:
Solid-State Electronics
Year:
1966
Language:
english
File:
PDF, 164 KB
english, 1966
14

European meeting

Journal:
Solid-State Electronics
Year:
1966
Language:
english
File:
PDF, 68 KB
english, 1966