Volume 43; Issue 3

IBM Journal of Research and Development

Volume 43; Issue 3

1

Growth and characterization of ultrathin nitrided silicon oxide films

Gusev, E. P., Lu, H.-C., Garfunkel, E. L., Gustafsson, T., Green, M. L.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 1.13 MB

english, 1999

2

Scaling the gate dielectric: Materials, integration, and reliability

Buchanan, D. A.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 1.29 MB

english, 1999

3

(Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM

Kotecki, D. E., Baniecki, J. D., Shen, H., Laibowitz, R. B., Saenger, K. L., Lian, J. J., Shaw, T. M., Athavale, S. D., Cabral, C., Duncombe, P. R., Gutsche, M., Kunkel, G., Park, Y.-J., Wang, Y.-Y.,

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 1.73 MB

english, 1999

4

Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides

Lo, S.-H., Buchanan, D. A., Taur, Y.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 908 KB

english, 1999

5

Characterization of silicon surface preparation processes for advanced gate dielectrics

Okorn-Schmidt, H. F.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 878 KB

english, 1999

6

Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics

Ellis, K. A., Buhrman, R. A.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 768 KB

english, 1999

7

Cost-effective cleaning and high-quality thin gate oxides

Heyns, M. M., Bearda, T., Cornelissen, I., DeGendt, S., Degraeve, R., Groeseneken, G., Kenens, C., Knotter, D. M., Loewenstein, L. M., Mertens, P. W., Mertens, S., Meuris, M., Nigam, T., Schaekers, M.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 664 KB

english, 1999

8

Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations

Hook, T. B., Burnham, J. S., Bolam, R. J.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 1.03 MB

english, 1999

9

Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 1.79 MB

english, 1999

10

Preface

Buchanan, D. A.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 1.33 MB

english, 1999

11

Key measurements of ultrathin gate dielectric reliability and in-line monitoring

Abadeer, W. W., Bagramian, A., Conkle, D. W., Griffin, C. W., Langlois, E., Lloyd, B. F., Mallette, R. P., Massucco, J. E., McKenna, J. M., Mittl, S. W., Noel, P. H.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 445 KB

english, 1999

12

Titanium dioxide (TiO2)-based gate insulators

Campbell, S. A., Kim, H.-S., Gilmer, D. C., He, B., Ma, T., Gladfelter, W. L.

Journal:

IBM Journal of Research and Development

Year:

1999

Language:

english

File:

PDF, 1.22 MB

english, 1999