Volume 2; Issue 11

IEEE Electron Device Letters

Volume 2; Issue 11

1

Forecasting reject rate of tested LSI chips

Seth, S.C., Agrawal, V.D.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 172 KB

english, 1981

2

An In0.53Ga0.47As/Si3N4n-channel inversion mode MISFET

Liao, A.S.H., Leheny, R.F., Nahory, R.E., De Winter, J.C.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 376 KB

english, 1981

3

Breakdown characteristics of gallium arsenide

Baliga, B.J., Ehle, R., Shealy, J.R., Garwacki, W., Garwacki, W.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 265 KB

english, 1981

4

A virtual self-aligned process for n-channel InP IGFET's (or MISFET's)

Tseng, W.F., Bark, M.L., Dietrich, H.B., Christou, A., Henry, R.L., Schmidt, W.A., Saks, N.S.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 336 KB

english, 1981

5

Low dark-current, high-efficiency planar In0.53Ga0.47As/InP P-I-N photodiodes

Forrest, S.R., Camlibel, I., Kim, O.K., Stocker, H.J., Zuber, J.R.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 284 KB

english, 1981

6

Comment on "Effect of collisional broadening on Monte Carlo simulations of high-field transport in semiconductor devices"

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 231 KB

english, 1981

7

Dual-polarity, single-resist mixed (e-beam/photo) lithography

Berker, T.D., Bernacki, S.E.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 575 KB

english, 1981

8

The effect of collisional broadening on Monte Carlo simulations of high-field transport in semiconductor devices

Capasso, F., Pearsall, T.P., Thornber, K.K.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 351 KB

english, 1981

9

An uncompensated silicon bipolar junction transistor fabricated using molecular beam epitaxy

Swartz, R.G., McFee, J.H., Grabbe, P., Finegan, S.N.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 305 KB

english, 1981

10

An ultrahigh speed modulated barrier photodiode made on P-type gallium arsenide substrates

Chen, C.Y., Cho, A.Y., Garbinski, P.A., Bethea, C.G.

Journal:

IEEE Electron Device Letters

Year:

1981

Language:

english

File:

PDF, 302 KB

english, 1981