Volume 22; Issue 3

IEEE Electron Device Letters

Volume 22; Issue 3

1

Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data

Hattendorf, M., Scott, D., Yang, Q., Feng, M.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 68 KB

english, 2001

2

Monolithic heteroepitaxial PbTe-on-Si infrared focal plane array with 96/spl times/128 pixels

Alchalabi, K., Zimin, D., Zogg, H., Buttler, W.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 60 KB

english, 2001

3

RF power LDMOSFET on SOI

J. Fiorenza, D. Antoniadis, J. Del Alamo

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 69 KB

english, 2001

4

3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC

Sei-Hyung Ryu,, Agarwal, A.K., Singh, R., Palmour, J.W.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

5

3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices

Thean, A., Leburton, J.P.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 72 KB

english, 2001

6

Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor

Chang, P.C., Li, N.Y., Baca, A.G., Hou, H.Q., Monier, C., Laroche, J.R., Ren, F., Pearton, S.J.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 48 KB

english, 2001

7

Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs

Mudanai, S., Register, L.F., Tasch, A.F., Banerjee, S.K.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 57 KB

english, 2001

8

Modeling of mismatch effect in submicron MOSFETs based on BSIM3 model and parametric tests

Zhang, Q., Liou, J.J., McMacken, J., Thomson, J., Layman, P.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 69 KB

english, 2001

9

An implanted-emitter 4H-SiC bipolar transistor with high current gain

Tang, Y., Fedison, J.B., Chow, T.P.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 41 KB

english, 2001

10

An SOI LDMOS/CMOS/BJT technology for integrated power amplifiers used in wireless transceiver applications

Kumar, M., Tan, Y., Sin, J.K.O., Cai, J.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 63 KB

english, 2001

11

Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers

Fedison, J.B., Ramungul, N., Chow, T.P., Ghezzo, M., Kretchmer, J.W.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 72 KB

english, 2001

12

The observation of negative transconductance effect caused by real-space-transfer of electrons in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric

Chihming Lai, B., Ya-Min Lee, J.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 61 KB

english, 2001