Volume 26; Issue 5

IEEE Electron Device Letters

Volume 26; Issue 5

1

Resistance-switching Characteristics of polycrystalline Nb2O5 for nonvolatile memory application

Hyunjun Sim, Dooho Choi, Dongsoo Lee, Sunae Seo, Myong-Jae Lee, In-Kyeong Yoo, Hyunsang Hwang

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 117 KB

english, 2005

2

Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

Nayfeh, A., Chi On Chui,, Yonehara, T., Saraswat, K.C.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 415 KB

english, 2005

3

Micromachined bolometer with single-crystal silicon diode as temperature sensor

P. Neuzil, . Yong Liu, . Han-hua Feng, . Wenjiang Zeng

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 550 KB

english, 2005

4

Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts

. Haijiang Yu, L. Mccarthy, S. Rajan, S. Keller, S. Denbaars, J. Speck, U. Mishra

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 329 KB

english, 2005

5

Silicon oxide-planarized single-mode 850-nm VCSELs with TO package for 10 Gb/s data transmission

Chia-Lung Tsai,, Feng-Ming Lee,, Fu-Yi Cheng,, Meng-Chyi Wu,, Sum-Chien Ko,, Hai-Lin Wang,, Wen-Jeng Ho,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 727 KB

english, 2005

6

A study of negative-bias temperature instability of SOI and body-tied FinFETs

Hyunjin Lee,, Choong-Ho Lee,, Donggun Park,, Yang-Kyu Choi,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 321 KB

english, 2005

7

Electrical properties of amorphous high-/spl kappa/ HfTaTiO gate dielectric with dielectric constants of 40-60

Lu, N., Li, H.-J., Gardner, M., Wickramanayaka, S., Kwong, D.-L.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 224 KB

english, 2005

8

Measurement of ultralow gate tunneling currents using floating-gate integrator technique

Bin Wang,, Yanjun Ma,, Paulsen, R., Diorio, C., Humes, T.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 118 KB

english, 2005

9

Color mixing improvement of CMOS image sensor with air-gap-guard ring in deep-submicrometer CMOS technology

Hsu, T.H., Fang, Y.K., Yaung, D.N., Wuu, S.G., Chien, H.C., Wang, C.S., Lin, J.S., Tseng, C.H., Chen, S.F., Lin, C.S., Lin, C.Y.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 127 KB

english, 2005

10

Bonded planar double-metal-gate NMOS transistors down to 10 nm

Vinet, M., Poiroux, T., Widiez, J., Lolivier, J., Previtali, B., Vizioz, C., Guillaumot, B., Le Tiec, Y., Besson, P., Biasse, B., Allain, F., Casse, M., Lafond, D., Hartmann, J.-M., Morand, Y., Chiaro

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 332 KB

english, 2005

11

Transistor heater for microhotplate-based metal-oxide microsensors

Graf, M., Muller, S.K., Barrettino, D., Hierlemann, A.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 264 KB

english, 2005

12

Partial SOI type isolation for improvement of DRAM cell transistor characteristics

Myoung Jin Lee,, Jun Hee Cho,, Sang Don Lee,, Jin Hong Ahn,, Jin Woong Kim,, Sung Wook Park,, Park, Y.J., Hong Shick Min,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 394 KB

english, 2005

13

A nonvolatile memory based on reversible phase changes between fcc and hcp

Dong-Ho Ahn,, Dae-Hwan Kang,, Byung-ki Cheong,, Hyuk-Soon Kwon,, Min-Ho Kwon,, Tae-Yeon Lee,, Jeung-hyun Jeong,, Taek Sung Lee,, In Ho Kim,, Ki-Bum Kim,

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 479 KB

english, 2005

14

Intermodulation in capacitively coupled microelectromechanical filters

Alastalo, A.T., Kaajakari, V.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 247 KB

english, 2005

15

Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain

Lauer, I., Antoniadis, D.A.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 149 KB

english, 2005

16

An electrical model with junction temperature for light-emitting diodes and the impact on conversion efficiency

Jeong Park,, Lee, C.C.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 109 KB

english, 2005

17

An air spacer technology for improving short-channel immunity of MOSFETs with raised source/drain and high-/spl kappa/ gate dielectric

Chunshan Yin,, Chan, P.C.H., Chan, M.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 484 KB

english, 2005

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