Volume 5; Issue 1

IEEE Electron Device Letters

Volume 5; Issue 1

1

Double-implanted GaAs complementary JFET's

Zuleeg, R., Notthoff, J.K., Troeger, G.L.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 327 KB

english, 1984

2

18-percent efficient terrestrial silicon solar cells

Blakers, A.W., Green, M.A., Jiqun, S., Keller, E.M., Wenham, S.R., Godfrey, R.B., Szpitalak, T., Willison, M.R.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 221 KB

english, 1984

3

Fast optoelectronic crosspoint electrical switching of GaAs photoconductors

Lam, D.K.W., MacDonald, R.I.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 325 KB

english, 1984

4

GaAs MESFET's with Ga1-xAlxAs buffer layers

Ghosh, C.L., Layman, R.L.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 286 KB

english, 1984

5

Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements

Loreck, L., Dambkes, H., Heime, K., Ploog, K., Weimann, G.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 277 KB

english, 1984

6

Electroabsorption Al0.48In0.52As p-i-n avalanche photodiodes grown by molecular beam epitaxy

Capasso, F., Alavi, K., Cho, A.Y., Hutchinson, A.L.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 261 KB

english, 1984

7

GaAs MESFET's made by ion implantation into MOCVD Buffer layers

Feng, M., Eu, V.K., Zielinski, T., Kanber, H., Henderson, W.B.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 261 KB

english, 1984

8

Deep UV exposure of Ag2Se/GeSe2utilizing an excimer laser

Polasko, K.J., Ehrlich, D.J., Tsao, J.Y., Pease, R.F.W., Marinero, E.E.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 408 KB

english, 1984

9

Photoelectrochemical plating of via GaAs FET's

Kohl, P.A., D'Asaro, L.A., Wolowodiuk, C., Ostermayer, F.W.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 403 KB

english, 1984

10

No blister formation Pd/Pt double metal gate MISFET hydrogen sensors

Choi, S.-Y., Takahashi, K., Matsuo, T.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 209 KB

english, 1984