Volume 8; Issue 7

IEEE Electron Device Letters

Volume 8; Issue 7

1

Hysteresis I-V effects in short-channel Silicon MOSFET's

Boudou, A., Doyle, B.S.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 279 KB

english, 1987

2

Millimeter-wave Gunn oscillator in series operation

Teng, S.J.J., Goldwasser, R.E.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 232 KB

english, 1987

3

InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy

Won-Tien Tsang,, Campbell, J.C., Qua, G.J.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 327 KB

english, 1987

4

Effects of the gate-to-drain/source overlap on MOSFET characteristics

Chan, T.Y., Wu, A.T., Ko, P.K., Hu, C.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 294 KB

english, 1987

5

Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications

Capasso, F., Sen, S., Cho, A.Y., Sivco, D.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 407 KB

english, 1987

6

The effect of post-oxygen-implant annealing temperature on the channel mobilities of CMOS devices in oxygen-implanted silicon-on-insulator structures

Bor-Yen Mao,, Matloubian, M., Cheng-Eng Chen,, Sundaresan, R., Slawinski, C.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 261 KB

english, 1987

7

A new self-aligned VLSI Isolation process using thin-metal lift-off

Lee, J.Y., Slayman, C.W., Garvin, H.L., Kastris, R.E., Montes, M.C.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 408 KB

english, 1987

8

Self-aligned silicided (PtSi and CoSi2) ultra-shallow p+/n junctions

Broadbent, E.K., Delfino, M., Morgan, A.E., Sadana, D.K., Maillot, P.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 409 KB

english, 1987

9

Effect of off-axis implant on the characteristics of advanced self-aligned bipolar transistors

Ching-Te Chuang,, Li, G.P., Ning, T.H.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 261 KB

english, 1987

10

Superbeta polysilicon emitter transistors

Keyes, E.P., Tarr, N.G.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 276 KB

english, 1987

11

High-performance SOI-CMOS Transistors in oxygen-implanted silicon without epitaxy

Davis, J.R., Reeson, K.J., Hemment, P.L.F., Marsh, C.D.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 375 KB

english, 1987

12

GaAs MESFET's fabricated on InP substrates

Asano, K., Kasahara, K., Itoh, T.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 319 KB

english, 1987

13

Theory of noise for a general multiplication process

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 277 KB

english, 1987

14

AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process

Chang, M.-C.F., Asbeck, P.M., Wang, K.C., Sullivan, G.J., Neng-Haung Sheng,, Higgins, J.A., Miller, D.L.

Journal:

IEEE Electron Device Letters

Year:

1987

Language:

english

File:

PDF, 436 KB

english, 1987