Volume 13; Issue 8

IEEE Transactions on Electron Devices

Volume 13; Issue 8

1

Front cover and table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 186 KB

english, 1966

2

Editorial

Journal:

IEEE Transactions on Electron Devices

Year:

1966

File:

PDF, 35 KB

1966

3

Introduction

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 114 KB

english, 1966

4

A survey of second breakdown

Schafft, H.A., French, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 818 KB

english, 1966

5

Second breakdown in simplified transistor structures and diodes

Schroen, W., Scarlett, R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 1.23 MB

english, 1966

6

Input power induced thermal effects related to transition time between avalanche and second breakdown in p-n silicon junctions

Ferry, D.K., Dougal, A.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 423 KB

english, 1966

7

Some new aspects of thermal instability of the current distribution in power transistors

Bergmann, F., Gerstner, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 616 KB

english, 1966

8

Thermal switchback in high ftepitaxial transistors

Steffe, W., Le Gall, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 401 KB

english, 1966

9

The scanning electron microscope as a means of investigating "Second breakdown" and similar phenomena

Neve, N.F.B., Sulway, D.V., Hughes, K.A., Thornton, P.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 839 KB

english, 1966

10

Experimental demonstration and theory of a corrective to second breakdown in Si power transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 960 KB

english, 1966

11

A characterization technique for second breakdown in Ge alloyed junction transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 344 KB

english, 1966

12

Transistor failure by secondary breakdown

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 454 KB

english, 1966

13

Second breakdown in the forward and reverse base current region

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 780 KB

english, 1966

14

Physical investigation of the mesoplasma in silicon

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 872 KB

english, 1966

15

Gunn oscillations in indium arsenide

Allen, J.W., Shyam, M., Pearson, G.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 189 KB

english, 1966

16

Fundamental oscillation of avalanching silicon p-n junction diodes in the 70 to 140 GHz range

Bowman, L.S., Burrus, C.A., Muller, H.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 189 KB

english, 1966

17

Recent results obtained with epitaxial Gunn effect oscillators

Brady, D., Knight, S., Lawley, L., Uenohara, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 189 KB

english, 1966

18

Yet another mode of oscillation in GaAs

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 189 KB

english, 1966

19

Noise in avalanche diodes

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 189 KB

english, 1966

20

High-frequency negative differential resistance in GaAs

Kennedy, W.J., Jr.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 189 KB

english, 1966

21

Current saturation and instability in CdTe and ZnSe

Ludwig, G.W., Halsted, R.E., Even, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 374 KB

english, 1966

22

High frequency Gunn-effect oscillators

Norton, L.E., Thomson, D.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 189 KB

english, 1966

23

An investigation of Si-SiO2and Si-Ta2O5interfaces prepared by reactive sputtering

Akiyama, K., Ishihara, T., Takemoto, T., Terui, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 203 KB

english, 1966

24

Deep depletion thin-film silicon-on-sapphire MOS transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 203 KB

english, 1966

25

Positive and negative ion motion in thermal oxide on silicon by radiochemical and MOS analysis

Slabinski, C.J., Kuper, A.B., Yon, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 203 KB

english, 1966

26

Charge instability in metal-silicon nitride-silicon structures

Szedon, J.R., Chu, T.L., Gruber, G.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 203 KB

english, 1966

27

The effect of high energy electron bombardment on MOS structures

Zaininger, K.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 364 KB

english, 1966

28

MOS capacitance evaluation of gold diffusion in silicon and thermally grown silicon dioxide

Collins, D.R., Schroder, D.K., Sah, C.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 180 KB

english, 1966

29

Influence of surface conditions on silicon transistor current gain (hFE)

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 180 KB

english, 1966

30

A frequency selective device utilizing the mechanical resonance of a silicon substrate

Wilfinger, R.J., Chhabra, D.S., Bardell, P.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 180 KB

english, 1966

31

Theory of injected oscillators

Arizumi, T., Umeno, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

32

Calculation of the velocity-field characteristic for GaAs and the consequent domain behavior in the Gunn effect

Butcher, P.N., Fawcett, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

33

Hole mobility in p-type inversion layers on thermally oxidized silicon surfaces

Colman, D., Mize, J.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

34

Transport properties of electrons on

Fang, F.F., Fowler, A.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

35

Bulk GaAs negative conductance amplifiers

Foyt, A.G., McWhorter, A.L., Quist, T.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

36

Photoemission of holes from silicon into silicon dioxide

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

37

Characteristics of surface space-charge regions under non-equilibrium conditions

Grove, A.S., Fitzgerald, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

38

The effect of nonuniform electric fields on Gunn oscillators

Hasty, T.E., Martin, D.D., Wilson, O.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

39

Relationships between low frequency gate noise and surface state conductance of the MOST

Hielscher, F.H., Sah, C.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

40

Subcritically doped bulk negative conductivity diodes

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

41

Observation of the acoustoelectric effect in PbTe

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

42

Statistical phenomena associated with Si-SiO2interface states

Nicollian, E.H., Goetzberger, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

43

Multiple domains in Gunn oscillators

Owens, J., Kino, G.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

44

Field dependence of drift velocity of the 〈100〉 electrons in GaAs

Shyam, M., Allen, J.W., Pearson, G.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

45

Barrier energies in MOS structures

Snow, E.H., Deal, B.E., Mead, C.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

46

Surface properties of II-VI compounds

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 192 KB

english, 1966

47

Coherent oscillations in indium antimonide

Eidson, J.C., Kino, G.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 372 KB

english, 1966

48

Small-signal impedance of avalanching junctions with unequal electron and hole ionization rates and drift velocities

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 190 KB

english, 1966

49

Avalanche-region characterization of Read diodes

Gummel, H.K., Scharfetter, D.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 190 KB

english, 1966

50

Design of Read diode oscillators

Gummel, H.K., Scharfetter, D.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 190 KB

english, 1966

51

Amplification at subcritical velocities

McWhorter, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 190 KB

english, 1966

52

Dependence of small-signal characteristics of IMPATT diodes on device parameters

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 190 KB

english, 1966

53

Drift mobility of electrons in InSb

Owens, J., Gray, D.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 190 KB

english, 1966

54

Coherent microwave emission from p-type indium antimonide

Swartz, G.A., Robinson, B.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 190 KB

english, 1966

55

Light sensitive, efficient electroluminescent ZnTe switching diodes

Crowder, B.L., Morehead, F.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 202 KB

english, 1966

56

Observation and interpretation of Hermite-Gaussian mode patterns in GaAs junction lasers

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 202 KB

english, 1966

57

Electronic beam scanning of injection lasers

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 202 KB

english, 1966

58

Small-bandgap semiconductor infrared lasers

Melngailis, I., Strauss, A.J., Dimmock, J.O.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 202 KB

english, 1966

59

The size effect maser

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 202 KB

english, 1966

60

Low temperature coefficient high efficiency GaAs luminescent diode

Winstel, G., Zschauer, K.-H., Mettler, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 368 KB

english, 1966

61

Filamentary conduction in two-carrier space charge limited devices

Barnett, A.M., Milnes, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

62

Absorptive infrared modulation in GaAs p-n junctions

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

63

Fowler-Nordheim tunneling in Al-Al2O3-SnTe junctions

Chang, L.L., Stiles, P.J., Howard, W.E., Esaki, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 264 KB

english, 1966

64

Ion pairing in double diffused silicon devices

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

65

Temperature dependence of avalanche multiplication in semiconductors

Crowell, C.R., Sze, S.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

66

Electrical and optical properties of double injection diodes in semi-insulating GaAs

Gerhard, G.C., Barrett, J.R., Jensen, H.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

67

Efficient ultraviolet laser of ZnS by electron beam exitation

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

68

High voltage planar p-n junctions

Kao, Y.C., Woolley, E.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

69

On the role of sodium and hydrogen in the Si-SiO2system

Kooi, E., Whelan, M.V.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

70

Far infrared detection with superconducting point contacts

Shapiro, S., Grimes, C.C., Richards, P.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

71

Tunneling in the metal-insulator-semiconductor structure—I. Silicon-silicon dioxide, II. Thin film Al Al2O3-CdS and Al-Al2O3-CdSe

Shewchun, J., Waxman, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

72

Si-GaP heterojunctions

Zeidenbergs, G., Anderson, R.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

73

High voltage Schottky barrier current limiter

Zettler, R.A., Soshea, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 185 KB

english, 1966

74

Photoelectric emission phenomena in metal-insulator-metal junctions

Braunstein, A., Braunstein, M., Picus, G.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

75

InAs thin films for TFT device applications

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

76

Tunneling currents through thin films of AlN

Lewicki, G.W., Mead, C.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

77

Conduction through thin TiO2films

Maserjian, J., Mead, C.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

78

High efficiency CdS film transducer for shear modes

Nagao, M., Uchida, I.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

79

Acoustic attenuation of single-domain lithium niobate

Wen, C.P., Mayo, R.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 95 KB

english, 1966

80

Back cover

Journal:

IEEE Transactions on Electron Devices

Year:

1966

Language:

english

File:

PDF, 2.21 MB

english, 1966