Volume 29; Issue 8

IEEE Transactions on Electron Devices

Volume 29; Issue 8

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 235 KB

english, 1982

2

Array representation of nonidentical electrical cells

Appelbaum, J., Shechter, M., Bany, J., Yekutieli, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 542 KB

english, 1982

3

Investigation of polycrystalline silicon back surface field solar cells

Orr, W.A., Arienzo, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 636 KB

english, 1982

4

A physical mechanism of current-induced resistance decrease in heavily doped polysilicon resistors

Kato, K., Ono, T., Amemiya, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 673 KB

english, 1982

5

Photoresponses in In2O3transparent gate MOS capacitors

Ando, T., Chao-Kui Fong

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 760 KB

english, 1982

6

v-E dependence in small-sized MOS transistors

Leburton, J.-P., Dorda, G.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 420 KB

english, 1982

7

Process and device design of a 1000-V MOS IC

Yamaguchi, T., Morimoto, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 743 KB

english, 1982

8

A high-density, high-performance EEPROM cell

Schauer, H., Van Tran, L., Smith, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 929 KB

english, 1982

9

Analysis of minority-carrier transport in polysilicon devices

Fossum, J.G., Sundaresan, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 1.33 MB

english, 1982

10

Nonlinear analysis of the solid-state gyrotron oscillator by the Monte Carlo method

Ganguly, A.K., Hui, B.H., Kwo Ray Chu

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 1.17 MB

english, 1982

11

Soliton—Voltage and phase characteristics of a microwave crossed-field amplifier

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 829 KB

english, 1982

12

Power consumption of multiplexed liquid-crystal displays

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 440 KB

english, 1982

13

Current distributions at the lateral spreading of electron-hole plasma in a thyristor

Suzuki, M., Sawaki, N., Iwata, K., Nishinaga, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 431 KB

english, 1982

14

Miniaturization of Si MOSFET's at 77 K

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 287 KB

english, 1982

15

Simplified plasma-coupled bipolar linear imager utilizing an extended probe structure

Sakaue, M., Tamama, T., Mizushima, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 780 KB

english, 1982

16

Analysis of static characteristics of a bipolar-mode SIT (BSIT)

Nishizawa, J., Ohmi, T., Hsiao-Liang Chen

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 1.19 MB

english, 1982

17

Two-dimensional particle modeling of submicrometer gate GaAs FET's near pinchoff

Pone, J.-F., Castagne, R.C., Courat, J.-P., Arnodo, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 1.05 MB

english, 1982

18

Discharging process by multiple tunnelings in thin-oxide MNOS structures

Yamamoto, H., Iwasawa, H., Sasaki, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 722 KB

english, 1982

19

Modeling of MOS transistors with nonrectangular-gate geometries

Grignoux, P., Geiger, R.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 873 KB

english, 1982

20

Feed forward due to barrier modulation in charge-coupled devices

Madan, S.K., Mathur, B., Vasi, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 829 KB

english, 1982

21

Unidirectional transfer properties of the plasma-coupled shift register

Sakaue, M., Tamama, T., Mizushima, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 807 KB

english, 1982

22

Some general recombination statistics for semiconductor surfaces

Landsberg, P.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 294 KB

english, 1982

23

Second breakdown of vertical power MOSFET's

Chenming Hu, Min-Hwa Chi

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 637 KB

english, 1982

24

Very low dark current heterojunction CCD's

Milano, R.A., Liu, Y.Z., Anderson, R.J., Cohen, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 972 KB

english, 1982

25

A new VLSI memory cell using DMOS technology (DMOS cell)

Terada, K., Takada, M., Kurosawa, S., Suzuki, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 775 KB

english, 1982

26

A new self-aligning poly-contact technology for MOS LSI

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 695 KB

english, 1982

27

Polysilicon n+p-n+structures for memory redundancy

Greve, D.W., Tran, L.V.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 811 KB

english, 1982

28

A high-frequency bipolar JFET I2L process

Lui, S.K., Meyer, R.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 444 KB

english, 1982

29

Instability of MOSFET's due to redistribution of Oxide charges

Ng, K.K., Taylor, G.W., Sinha, A.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 902 KB

english, 1982

30

A low-power and high-speed submicron buried-channel MOSFET fabricated on the buried oxide

Omura, Y., Sano, E., Ohwada, K., Hirata, K., Sakakibara, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 246 KB

english, 1982

31

A new method for addressing flat-panel displays

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 423 KB

english, 1982

32

The concept of generation and recombination lifetimes in semiconductors

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 360 KB

english, 1982

33

Erratum

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 120 KB

english, 1982

34

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 2.60 MB

english, 1982

35

Low input capacitance and low loss VD-MOSFET rectifier element

Shimada, Y., Kato, K., Ikeda, S., Yoshida, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1982

Language:

english

File:

PDF, 363 KB

english, 1982