Volume 30; Issue 10

IEEE Transactions on Electron Devices

Volume 30; Issue 10

1

An operational definition for breakdown of thin thermal oxides of silicon

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 311 KB

english, 1983

2

Transconductance degradation in thin-Oxide MOSFET's

Baccarani, G., Wordeman, M.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.02 MB

english, 1983

3

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 297 KB

english, 1983

4

Fabrication of ECL gate arrays on quick turn-around line

Watakabe, Y., Tsukamoto, K., Harada, H., Saitoh, K., Kato, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 967 KB

english, 1983

5

Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's

Hyung-Kyu Lim, Fossum, J.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 869 KB

english, 1983

6

A study of projected optical images for typical IC mask patterns illuminated by partially coherent light

Liu, A.C., Burn Jeng Lin

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.68 MB

english, 1983

7

Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface

Bousse, L., De Rooij, N.F., Bergveld, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 985 KB

english, 1983

8

Analysis of an enhanced photoresponse observed at subgrain boundaries in polysilicon solar cells

Hung Chang Lin, Johnson, S.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 506 KB

english, 1983

9

Refinements in the measurement of depleted generation lifetime

Eades, W.D., Shott, J.D., Swanson, R.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 417 KB

english, 1983

10

A dielectrically isolated complementary bipolar technique for analog/Digital compatible LSI's

Sakurai, T., Ohno, T., Kato, K., Inabe, Y., Hayashi, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 836 KB

english, 1983

11

A numerical analysis of a heterostructure InP/InGaAs photodiode

Yokoyama, K., Tomizawa, M., Kanbe, H., Sudo, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 632 KB

english, 1983

12

Consideration of the frequency performance potential of GaAs homojunction and heterojunction n-p-n transistors

Song-Sheng Tan, Milnes, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 655 KB

english, 1983

13

Comparisons of instabilities in scaled CMOS devices between plastic and hermetically encapsulated devices

Noyori, M., Nakata, Y., Shiragasawa, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 841 KB

english, 1983

14

Window losses and current mismatch computer modeling studies in AIGaAs-GaAs cascade solar cell

Lamorte, M.F., Abbott, D.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.05 MB

english, 1983

15

A comparison of Nd:YAG fundamental and second-harmonic Q-switched laser-beam lifetime doping in single-crystal silicon

Parker, D.L., Fa-Yong Lin, Shan-Ji Zhu, Ding-Kang Zhang, Porter, W.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 459 KB

english, 1983

16

Simulation of GaAs IMPATT diodes including energy and velocity transport equations

Mains, R.K., Haddad, G.I., Blakey, P.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 781 KB

english, 1983

17

N- and P-well optimization for high-speed N-epitaxy CMOS circuits

Schwabe, U., Herbst, H., Jacobs, E.P., Takacs, D.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 551 KB

english, 1983

18

Study of the input and reverse transfer capacitance of vertical MOS transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 527 KB

english, 1983

19

Improved design of the gallium arsenide permeable base transistor

Osman, M.A., Navon, D.H., Timg-Wei Tang, Lin Sha

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 630 KB

english, 1983

20

A simple punchthrough model for short-channel MOSFET's

Fu-Chieh Hsu, Muller, R.S., Chenming Hu, Ping-Keung Ko

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 540 KB

english, 1983

21

Relationship between the blue response and open-circuit voltage of high performance silicon solar cells

Green, M.A., Blakers, A.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 602 KB

english, 1983

22

FCAT-II: A 50 ns/15 V alterable nonvolatile memory device—Part I: Experimental

Horiuchi, M., Katto, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 757 KB

english, 1983

23

Accurate modeling for submicrometer-gate Si and GaAs MESFET's using two-dimensional particle simulation

Yoshii, A., Tomizawa, M., Yokoyama, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 868 KB

english, 1983

24

Bulk-barrier transistor

Mader, H., Muller, R., Beinvogl, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 716 KB

english, 1983

25

A CCD imager overlaid with a thin-film photodetector of a heterojunction ZnSe-Zn1-xCdxTe

Chikamura, T., Miyata, Y., Yano, K., Ohta, Y., Fujiwara, S., Terui, Y., Yoshino, M., Nakayama, M., Fukai, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 796 KB

english, 1983

26

Reduction of lateral diffusion of photoelectrons in silicon photodiode imager arrays by internal gettering

Nelson, E.T., Anagnostopoulos, C.N., Lavine, J.P., Burkey, B.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 397 KB

english, 1983

27

Fabrication and analysis of 1/2µm Silicon logic MESFET's

Nulman, J., Faricelli, J.V., Krusius, J.P., Frey, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 828 KB

english, 1983

28

Method for producing via-connections in semiconductor wafers using a combination of plasma and chemical etching

Guldan, A., Hrubcin, L., Kubek, J., Tykva, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 347 KB

english, 1983

29

Latchup prevention using an N-well epi-CMOS process

Holly, P.J., Akers, L.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 516 KB

english, 1983

30

Gain characteristics of a distributed IMPATT device

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 243 KB

english, 1983

31

Effect of silicide process on bipolar transistor current gain

Oh, K.H., Panousis, P.T.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 310 KB

english, 1983

32

Transient response of diffused junction capacitors

Shenai, K., Lin, H.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 277 KB

english, 1983

33

Optimum semiconductors for high-frequency and low-noise MESFET applications

Golio, J.M., Trew, R.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 342 KB

english, 1983

34

Hole injection into nontransparent n-type Si layers

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 246 KB

english, 1983

35

Characterization of local transfer defects in CCD's using a multireversal transfer mode

Lemonier, M., Piaget, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 412 KB

english, 1983

36

Two-dimensional effects in hot-electron modified MOSFET's

Lombardi, C., Olivo, P., Ricco, B., Sangiorgi, E., Vanzi, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 418 KB

english, 1983

37

Erratum

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 85 KB

english, 1983

38

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 3.24 MB

english, 1983