Volume 30; Issue 7

IEEE Transactions on Electron Devices

Volume 30; Issue 7

1

Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon

Masetti, G., Severi, M., Solmi, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 622 KB

english, 1983

2

Temperature sensitivity in silicon piezoresistive pressure transducers

Sea-Chung Kim, Wise, K.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.26 MB

english, 1983

3

Controlled turn-on thyristors

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.05 MB

english, 1983

4

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 215 KB

english, 1983

5

Electrical and structural properties of pulse laser-annealed polycrystalline silicon films

Cox, T.I., Deshmukh, V.G.I., Hill, J.R., Webber, H.C., Chew, N.G., Cullis, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.33 MB

english, 1983

6

Two-dimensional oxidation

Daeje Chin, Soo-Young Oh, Shih-Ming Hu, Dutton, R.W., Moll, J.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 685 KB

english, 1983

7

Determination of a small-signal model for ion-implanted microwave transistors

Schutt-Aine, J.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 618 KB

english, 1983

8

New progress in the development of a 94-GHz pretuned module silicon IMPATT diode

Heitzmann, M., Boudot, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 476 KB

english, 1983

9

A theory of noise in GaAs FET microwave oscillators and its experimental verification

Debney, B.T., Joshi, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 895 KB

english, 1983

10

Threshold and punchthrough behavior of laterally nonuniformally doped short-channel MOSFET's

Wang, C.T., Navon, D.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 575 KB

english, 1983

11

Optimizing carrier lifetime profile for improved trade-off between turn-off time and forward drop

Temple, V.A.K., Holroyd, F.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 831 KB

english, 1983

12

High efficiency GaInAs/InP heterojunction IMPATT diodes

De Jaeger, J.-C., Kozlowski, R., Salmer, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 666 KB

english, 1983

13

Polycrystalline silicon-on-metal strain gauge transducers

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 551 KB

english, 1983

14

X-band self-aligned gate enhancement-mode InP MISFET's

Itoh, T., Ohata, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 594 KB

english, 1983

15

Nonlinear lumped circuit model of GaAs MESFET

Chua, L.O., Sing, Y.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 764 KB

english, 1983

16

Influence of a resistive sublayer at the polysilicon/silicon dioxide interface on MOS properties

Lifshitz, N., Luryi, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 419 KB

english, 1983

17

Ion implanted Si MESFET's with high cutoff frequency

Fernholz, G., Beneking, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 528 KB

english, 1983

18

Two-dimensional modeling of the MIS grating solar cell

De Visschere, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.36 MB

english, 1983

19

Measurement and simulation of GaAs FET's under electron-beam irradiation

Newman, D.S., Ferry, D.K., Sites, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.12 MB

english, 1983

20

Resistivity and mobility of GaP at 300 K

Kao, Y.C., Eknoyan, O.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 305 KB

english, 1983

21

Two-dimensional numerical analysis of impurity atom diffusion in semiconductors

Buonomo, A., Di Bello, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 471 KB

english, 1983

22

A quantitative comparison between calculated and measured conversion losses of a novel beam-lead GaAs Schottky-Barrier mixer diode with minimized parasitics

Harada, Y., Higashino, T., Nakakado, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 279 KB

english, 1983

23

A comment on "Modeling of MOS transistors with nonrectangular gate geometries"

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 184 KB

english, 1983

24

Erratum

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 110 KB

english, 1983

25

Erratum

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 110 KB

english, 1983

26

[Back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 2.01 MB

english, 1983

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