Volume 32; Issue 6

IEEE Transactions on Electron Devices

Volume 32; Issue 6

1

[Front cover and table of contents]

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 208 KB

english, 1985

2

Quasi-Fermi level bending in MODFET's and its effect on FET transfer characteristics

Ponse, F., Masselink, W.T., Morkoc, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 804 KB

english, 1985

3

An analysis of the thermal response of power chip packages

Kadambi, V., Abuaf, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 834 KB

english, 1985

4

The DSI diode—A fast large-area optoelectronic detector

Roth, W., Schumacher, H., Kluge, J., Geelen, H.J., Beneking, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 462 KB

english, 1985

5

GaAs MESFET ring oscillator on Si substrate

Ishida, T., Nonaka, T., Yamagishi, C., Kawarada, Y., Sano, Y., Akiyama, M., Kaminishi, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 657 KB

english, 1985

6

Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique

Chao, P.C., Smith, P.M., Palmateer, S.C., Hwang, J.C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 1.05 MB

english, 1985

7

Noise associated with substrate current in fine-line NMOS field-effect transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 607 KB

english, 1985

8

A multiplexer employing Josephson functional gates

Akahori, Y., Ichimiya, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 503 KB

english, 1985

9

A novel impact-ionization model for 1-µm-MOSFET simulation

Kuhnert, R., Werner, C., Schutz, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 718 KB

english, 1985

10

Doping effects and compositional grading in AlxGa1-xAs/GaAs heterojunction bipolar transistors

Chand, N., Morkoc, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 615 KB

english, 1985

11

Verification of the integral charge-control relation for high-speed bipolar transistors at high current densities

Rein, H.-M., Stubing, H., Schroter, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 712 KB

english, 1985

12

Bidirection shift plasma display requiring less than 20 drivers

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 596 KB

english, 1985

13

A receiver circuit for Josephson computer chip-to-chip logic signal transmissions

Tazoh, Y., Aoki, K., Yoshikiyo, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 460 KB

english, 1985

14

Ring oscillator circuit simulation with physical model for GaAs/GaAlAs heterojunction bipolar transistors

Kurata, M., Katoh, R., Yoshida, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 620 KB

english, 1985

15

Two-dimensional transient simulation of an idealized high electron mobility transistor

Widiger, D.J., Kizilyalli, I.C., Hess, K., Coleman, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 1.02 MB

english, 1985

16

A unified circuit model for bipolar transistors including quasi-saturation effects

Kull, G.M., Nagel, L.W., Shiuh-Wuu Lee, Lloyd, P., Prendergast, E.J., Dirks, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 845 KB

english, 1985

17

A source coupled FET logic—A new current-mode approach to GaAs logics

Katsu, S., Nambu, S., Shimano, A., Kano, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 322 KB

english, 1985

18

Contacts on GalnAs

Kraulte, H., Woelk, E., Selders, J., Beneking, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 685 KB

english, 1985

19

Quartz versus PBN—The effect of crucible type on undoped LEC GaAS

Chang, J.S.C., McCall, D.E., Wong, E.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 597 KB

english, 1985

20

Gallium arsenide Schottky power rectifiers

Baliga, B.J., Sears, A.R., Barnicle, M.M., Campbell, P.M., Garwacki, W., Walden, J.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 452 KB

english, 1985

21

A GaAs 1-kbit static RAM with a shallow recessed-gate structure FET

Takano, S., Tanino, N., Yoshihara, T., Mitsui, Y., Nishitani, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 660 KB

english, 1985

22

Fabrication of fully self-aligned joint-gate CMOS structures

Robinson, A.L., Antoniadis, D.A., Maby, E.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 507 KB

english, 1985

23

A formula for the concentration profile of a buried layer with back diffusion

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 286 KB

english, 1985

24

Improved convergence of numerical device simulation iterative algorithms

Hwang, K., Navon, D.H., Tang, T.-W., Osman, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 309 KB

english, 1985

25

Back cover

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 2.60 MB

english, 1985