Volume 41; Issue 9

IEEE Transactions on Electron Devices

Volume 41; Issue 9

1

Optimization of MOVPE grown InxAl1-xAs/In0.53Ga0.47As planar heteroepitaxial Schottky diodes for terahertz applications

Kyushik Hong, Marsh, P.F., Geok-Ing Ng, Pavlidis, D., Chang-Hee Hong

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 998 KB

english, 1994

2

InGaAs resonant tunneling transistors using a coupled-quantum-well base with strained AlAs tunnel barriers

Koch, S., Waho, T., Mizutani, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 730 KB

english, 1994

3

Analysis of surface state effect on gate lag phenomena in GaAs MESFET's

Shih-Hsien Lo, Chien-Ping Lee

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 808 KB

english, 1994

4

In-plane transport properties of Si/Si1-xGex structure and its FET performance by computer simulation

Yamada, T., Jing-Rong Zhou, Miyata, H., Ferry, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 1.11 MB

english, 1994

5

A study of binders for the thick-film cathodes of DC-type plasma display panels

Koiwa, I., Sawai, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 712 KB

english, 1994

6

Nonlinear optical transmission induced by large transient electric field enhancements in photoconductive zinc selenide switches

Cho, P.S., Cui, E.F., Goldhar, J., Lee, C.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 655 KB

english, 1994

7

A silicon homojunction infrared detector having an active metal film on an n++ layer

Tohyama, S., Tanabe, A., Teranishi, N.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 616 KB

english, 1994

8

Analysis of the noise factor of an avalanche photodiode operated in charge-storage mode

Zhong-Shou Huang

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 429 KB

english, 1994

9

An ultra-high-speed ECL-BiCMOS technology with silicon fillet self-aligned contacts

Liu, T.M., Chin, G.M., Jeon, D.Y., Morris, M.D., Archer, V.D., III, Johnson, R.W., Tarsia, M., Kim, H.H., Cerullo, M., Lee, K.F., Sung, J.J., Kei-Shun Lau, Tzu-Yin Chiu, Voshchenkov, A.M., Swartz, R.G

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 952 KB

english, 1994

10

Recombination saturation effects in silicon solar cells

Robinson, S.J., Aberle, A.G., Green, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 1.31 MB

english, 1994

11

A model relating wearout to breakdown in thin oxides

Dumin, D.J., Maddux, J.R., Scott, R.S., Subramoniam, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 1.12 MB

english, 1994

12

Polycrystalline silicon-germanium thin-film transistors

Tsu-Jae King, Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 1.26 MB

english, 1994

13

Double layer antireflection coating for high-efficiency passivated emitter silicon solar cells

Jianhua Zhao, Aihua Wang, Green, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 367 KB

english, 1994

14

Correlation of trap generation to charge-to-breakdown (Qbd ): a physical-damage model of dielectric breakdown

Apte, P.P., Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 844 KB

english, 1994

15

The effects of impact ionization on the operation of neighboring devices and circuits

Sakui, K., Wong, S.S., Wooley, B.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 636 KB

english, 1994

16

Furnace grown gate oxynitride using nitric oxide (NO)

Okada, Y., Tobin, P.J., Reid, K.G., Hegde, R.I., Maiti, B., Ajuria, S.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 589 KB

english, 1994

17

Amorphous-silicon distributed-threshold voltage transistors with self-aligned poly-silicon sources and drains

Chang-Dong Kim, Matsumura, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 347 KB

english, 1994

18

Effects of hot carrier induced interface state generation in submicron LDD MOSFET's

Tahui Wang, Chimoon Huang, Chou, P.C., Chung, S.S.-S., Tse-En Chang

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 527 KB

english, 1994

19

Effects of the velocity saturated region on MOSFET characteristics

Takeuchi, K., Fukuma, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 497 KB

english, 1994

20

Room-temperature single-electron memory

Yano, K., Ishii, T., Hashimoto, T., Kobayashi, T., Murai, F., Seki, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 1.21 MB

english, 1994

21

Modeling of oxide-charge generation during hot-carrier degradation of PMOSFET's

Woltjer, R., Paulzen, G.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 628 KB

english, 1994

22

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessenne, F., Dollfus, P., Dutton, R., Engl, W.L., Fauquembergue, R., Fiegna, C., Fischetti, M.V., Galdin, S., Goldsman, N., Hackel, M.,

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 746 KB

english, 1994

23

Low forward drop JBS rectifiers fabricated using submicron technology

Mehrotra, M., Baliga, B.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 564 KB

english, 1994

24

Analytical expressions for the three-dimensional effect on the breakdown voltages of planar junctions in nonpunchthrough and punchthrough cases

Il-Jung Kim, Seong-Dong Kim, Yearn-Ik Choi, Min-Koo Han

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 489 KB

english, 1994

25

A wideband monolithic RMS-DC converter using micromachined diaphragm structures

Yoon, E., Wise, K.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 469 KB

english, 1994

26

Charges trapped throughout the oxide and their impact on the Fowler-Nordheim current in MOS devices

Ku, P.S., Schroder, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 396 KB

english, 1994

27

Temperature-independent carrier mobility in large-grain poly-Si transistors

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 349 KB

english, 1994

28

A device model for an ion-implanted MESFET with Half-Pearson and Half-Gaussian distribution under post-anneal conditions

Haldar, S., Maneesha, Khanna, M.K., Gupta, R.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 350 KB

english, 1994

29

Correlation between substrate hot electron energy and homogeneous degradation in n-MOSFET's

Selmi, L., Fiegna, C., Bez, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 310 KB

english, 1994

30

Comments on "Oxide-field dependence of electron injection from silicon into silicon dioxide" [with reply]

Fischetti, M.V., Fiegna, C., Sangiorgi, E., Selmi, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 434 KB

english, 1994