Volume 44; Issue 12

IEEE Transactions on Electron Devices

Volume 44; Issue 12

1

Modeling of voltage-dependent diffused resistors

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 102 KB

english, 1997

2

Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector

Yue-Fei Yang, Chung-Chi Hsu, Hai-Jiang Ou, Ta-Chien Huang, Yang, E.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 188 KB

english, 1997

3

Noise and transit time in ungated FET structures

Mateos, J., Gonzalez, T., Pardo, D., Tadyszak, P., Danneville, F., Cappy, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 163 KB

english, 1997

4

Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMTs

Grundbacher, R., Ballegeer, D., Ketterson, A.A., Kao, Y.-C., Adesida, I.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 185 KB

english, 1997

5

An extremely low noise heterojunction IMPATT

Mishra, J.K., Panda, A.K., Dash, G.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 161 KB

english, 1997

6

An RTD/transistor switching block and its possible application in binary and ternary adders

Huber, J.L., Chen, J., McCormack, J.A., Zhou, C.W., Reed, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 82 KB

english, 1997

7

A new low-temperature bonding technology between large-area, high-power devices and Mo electrodes using Au-Al films

Onuki, J., Satou, M., Murakami, S., Yatsuo, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 140 KB

english, 1997

8

Measurement of proton radiation damage to Si avalanche photodiodes

Xiaoli Sun, Reusser, D., Dautet, H., Abshire, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 143 KB

english, 1997

9

Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy

Yan Shi, Zhao, J.H., Sarathy, J., Hao Lee, Olsen, G.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 143 KB

english, 1997

10

In0.53Ga0.47As MSM photodiodes with transparent CTO Schottky contacts and digital superlattice grading

Wei Gao, Berger, P.R., Zydzik, G.J., O'Bryan, H.M., Sivco, D.L., Cho, A.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 124 KB

english, 1997

11

Effect of i-layer parameters on the performance of Si n+-i-n+ homojunction far-infrared detectors

Yuan, Y., Perera, A.G.U.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 300 KB

english, 1997

12

Suppression of the floating-body effect in partially-depleted SOI MOSFETs with SiGe source structure and its mechanism

Nishiyama, A., Arisumi, O., Yoshimi, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 163 KB

english, 1997

13

A new method for extracting the channel-length reduction and the gate-voltage-dependent series resistance of counter-implanted p-MOSFETs

Chien-Min Wu, Ching-Yuan Wu

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 258 KB

english, 1997

14

A method for the prediction of hot-carrier lifetime in floating SOI NMOSFETs

Maeda, S., Yamaguchi, Y., Il-Jung Kim, Joachim, H.-O., Inoue, Y., Miyoshi, H., Yasuoka, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 161 KB

english, 1997

15

12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology

Onai, T., Ohue, E., Tanabe, M., Washio, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 153 KB

english, 1997

16

The influence of TiN ARC thickness on stress-induced void formation in tungsten-plug vias

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 156 KB

english, 1997

17

A novel technique for profiling the lateral n- doping concentrations of submicron LDD MOS devices

Chung, S.S., Shui-Ming Cheng, Lee, R.G.-H., Song-Nian Kuo, Mong-Song Liang

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 216 KB

english, 1997

18

A new method for extracting the counter-implanted channel profile of enhancement-mode p-MOSFETs

Chien-Min Wu, Ching-Yuan Wu

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 233 KB

english, 1997

19

Floating body effects in polysilicon thin-film transistors

Valdinoci, M., Colalongo, L., Baccarani, G., Fortunato, G., Pecora, A., Policicchio, I.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 195 KB

english, 1997

20

Influence of hydrodynamic models on the prediction of submicrometer device characteristics

Meikei Ieong, Ting-Wei Tang

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 344 KB

english, 1997

21

Substrate crosstalk reduction using SOI technology

Raskin, J.-P., Viviani, A., Flandre, D., Colinge, J.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 261 KB

english, 1997

22

In-depth exploration of Si-SiO2 interface traps in MOS transistors using the charge pumping technique

Bauza, D., Maneglia, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 159 KB

english, 1997

23

Identification of stress-induced leakage current components and the corresponding trap models in SiO2 films [MOS transistors]

Sakakibara, K., Ajika, N., Hatanaka, M., Miyoshi, H., Yasuoka, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 178 KB

english, 1997

24

Influence of holes on neutral trap generation

Sakakibara, K., Ajika, N., Miyoshi, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 185 KB

english, 1997

25

A floating-gate MOS learning array with locally computed weight updates

Diorio, C., Hasler, P., Minch, B.A., Mead, C.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 376 KB

english, 1997

26

The effect of body contact series resistance on SOI CMOS amplifier stages

Edwards, C.F., Redman-White, W., Tenbroek, B.M., Lee, M.S.L., Uren, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 143 KB

english, 1997

27

A simulated annealing algorithm for optimizing RF power efficiency in coupled-cavity traveling-wave tubes

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 68 KB

english, 1997

28

“Depletion isolation effect” of surrounding gate transistors

Terauchi, M., Shigyo, N., Nitayama, A., Horiguchi, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 102 KB

english, 1997

29

Miller's approximation in VLSI and power bipolar transistors with reach-through collectors

Kumar, M.J., Datta, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 96 KB

english, 1997

30

Degradation of tunnel-thin silicon dioxide films

Grekhov, I.V., Shulekin, A.F., Vexler, M.I.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 55 KB

english, 1997

31

Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFETs

Ling, C.H., Goh, Y.H.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 88 KB

english, 1997

32

Investigation of the frequency dispersion effect in the Root-model applied to conventional and floating-gate MESFETs

Van Den Bosch, S., Martens, L.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 75 KB

english, 1997

33

1997 Index IEEE Transactions on Electron Devices

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 2.01 MB

english, 1997