Volume 45; Issue 12

IEEE Transactions on Electron Devices

Volume 45; Issue 12

1

An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation

Suemitsu, T., Enoki, T., Sano, N., Tomizawa, M., Ishii, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 613 KB

english, 1998

2

Low-frequency noise of InP/InGaAs heterojunction bipolar transistors

Takanashi, Y., Fukano, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 264 KB

english, 1998

3

Interfacial gate resistance in Schottky-barrier-gate field-effect transistors

Rohdin, H., Moll, N., Chung-Yi Su, Lee, G.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 377 KB

english, 1998

4

GaInP/AlGaAs/GaInP double heterojunction bipolar transistors with zero conduction band spike at the collector

Beng-Chye Lye, Houston, P.A., Ho-Kwang Yow, Button, C.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 166 KB

english, 1998

5

Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP

Mahajan, A., Arafa, M., Fay, P., Caneau, C., Adesida, I.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 221 KB

english, 1998

6

Device parameter optimization of strained Si channel SiGe/Si n-MODFET's using a one-dimensional charge control model

Halkias, G., Vegiri, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 180 KB

english, 1998

7

Analysis of Si:Ge heterojunction integrated injection logic (I2L) structures using a stored charge model

Wainwright, S.P., Hall, S., Ashburn, P., Lamb, A.C.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 367 KB

english, 1998

8

Design methodology and optimization of gate-driven NMOS ESD protection circuits in submicron CMOS processes

Chen, J.Z., Amerasekera, E.A., Duvvury, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 510 KB

english, 1998

9

Emitter series resistance from open-collector measurements-influence of the collector region and the parasitic pnp transistor

Gabl, R., Reisch, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 300 KB

english, 1998

10

Read-disturb and endurance of SSI-flash E2PROM devices at high operating temperatures

De Blauwe, J., Wellekens, D., Groeseneken, G., Haspeslagh, L., Van Houdt, J., Deferm, L., Maes, H.E.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 270 KB

english, 1998

11

Low-frequency drain current noise behavior of InP based MODFET's in the linear and saturation regime

Van Meer, H., Simoen, E., Valenza, M., Van Der Zanden, K., De Raedt, W.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 281 KB

english, 1998

12

A C-switch cell for low-voltage and high-density SRAMs

Kuriyama, H., Ishigaki, Y., Fujii, Y., Maegawa, S., Maeda, S., Miyamoto, S., Tsutsumi, K., Miyoshi, H., Yasuoka, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 303 KB

english, 1998

13

A compact LDD MOSFET I-V model based on nonpinned surface potential

Sheng-Lyang Jang, Shau-Shen Liu, Chorng-Jye Sheu

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 467 KB

english, 1998

14

Quantifying neutral base recombination and the effects of collector-base junction traps in UHV/CVD SiGe HBTs

Niu, G., Cressler, J.D., Joseph, A.J.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 157 KB

english, 1998

15

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D “atomistic” simulation study

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 342 KB

english, 1998

16

Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors

Kumar K.P., A., Sin, J.K.O., Nguyen, C.T., Ko, P.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 295 KB

english, 1998

17

A degenerately-doped GaAs Schottky diode model applicable for terahertz frequency regime operation

Gelmont, B.L., Woolard, D.L., Hesler, J.L., Crowe, T.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 233 KB

english, 1998

18

Bulk defect induced low-frequency noise in n+-p silicon diodes

Fan-Chi Hou, Bosman, G., Simoen, E., Vanhellemont, J., Claeys, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 362 KB

english, 1998

19

IGBT dynamics for clamped inductive switching

Trivedi, M., Shenai, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 197 KB

english, 1998

20

A high-performance polycrystalline silicon thin film transistor with a silicon nitride gate insulator

Lee, K.H., Park, J.K., Jin Jang

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 106 KB

english, 1998

21

Tunneling through ultrathin GaAs n++-p++-n ++ barrier grown by molecular layer epitaxy

Yong-Xun Liu, Plotka, P., Suto, K., Oyama, Y., Nishizawa, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 130 KB

english, 1998

22

A novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology

Xing Zhou, Wei Long

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 96 KB

english, 1998

23

Author index

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 412 KB

english, 1998