Volume 45; Issue 3

IEEE Transactions on Electron Devices

Volume 45; Issue 3

1

A stochastic wire-length distribution for gigascale integration (GSI). I. Derivation and validation

Davis, J.A., De, V.K., Meindl, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 383 KB

english, 1998

2

A stochastic wire-length distribution for gigascale integration (GSI). II. Applications to clock frequency, power dissipation, and chip size estimation

Davis, J.A., De, V.K., Meindl, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 478 KB

english, 1998

3

DRAM technology perspective for gigabit era

Kinam Kim, Chang-Gyu Hwang, Jong Gil Lee

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 199 KB

english, 1998

4

Technology for advanced high-performance microprocessors

Bohr, M.T., El-Mansy, Y.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 305 KB

english, 1998

5

Recent advances in process synthesis for semiconductor devices

Hosack, H.H., Mozumder, P.K., Pollack, G.P.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 114 KB

english, 1998

6

A new device design methodology for manufacturability

Lu, J.-C., Holton, W.C., Fenner, J.S., Williams, S.C., Kim, K.W., Hartford, A.H., Chen, D., Roze, K., Littlejohn, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 262 KB

english, 1998

7

Role of rapid photothermal processing in process integration

Singh, R., Nimmagadda, S.V., Parihar, V., Chen, Y., Poole, K.F.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 199 KB

english, 1998

8

Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach

Paulsen, R.E., Kyono, C.S., Wang, Y., Klein, K.M., Lim, I.-S., Tinkler, S., Bellamak, B., Odle, D.W., Zhou, Z., Dahl, P., Giovanetto, M., Makwana, J., Patel, S., Reno, C., Lenahan, P.M., Billman, C.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 162 KB

english, 1998

9

The physical and electrical effects of metal-fill patterning practices for oxide chemical-mechanical polishing processes

Stine, B.E., Boning, D.S., Chung, J.E., Camilletti, L., Kruppa, F., Equi, E.R., Loh, W., Prasad, S., Muthukrishnan, M., Towery, D., Berman, M., Kapoor, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 473 KB

english, 1998

10

Making silicon nitride film a viable gate dielectric

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 234 KB

english, 1998

11

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

Momose, H.S., Nakamura, S.-I., Ohguro, T., Yoshitomi, T., Morifuji, E., Morimoto, T., Katsumata, Y., Iwai, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 294 KB

english, 1998

12

Characteristics of low-energy BF2- or As-implanted layers and their effect on the electrical performance of 0.15-μm MOSFET's

Nishida, A., Murakami, E., Kimura, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 511 KB

english, 1998

13

Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Ohguro, T., Sugiyama, N., Imai, S., Usuda, K., Saito, M., Yoshitomi, T., Ono, M., Kimijima, H., Momose, H.S., Katsumata, Y., Iwai, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 197 KB

english, 1998

14

0.15-μm buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layer

Ohguro, T., Yamada, K., Sugiyama, N., Imai, S., Usuda, K., Yoshitomi, T., Fiegna, C., Ono, M., Saito, M., Momose, H.S., Katsumata, Y., Iwai, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 119 KB

english, 1998

15

Controlling plasma charge damage in advanced semiconductor manufacturing. Challenge of small feature size device, large chip size, and large wafer size

Aum, P.K., Brandshaft, R., Brandshaft, D., Dao, T.B.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 723 KB

english, 1998

16

Analysis of thin gate oxide degradation during fabrication of advanced CMOS ULSI circuits

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 146 KB

english, 1998

17

0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation

Saito, M., Ono, M., Fujimoto, R., Tanimoto, H., Ito, N., Yoshitomi, T., Ohguro, T., Momose, H.S., Iwai, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 174 KB

english, 1998

18

Advanced IC packaging for the future applications

Anjoh, I., Nishimura, A., Eguchi, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 375 KB

english, 1998

19

Plasma-induced charging evaluation using SCA and PDM tools

Karzhavin, Y., Lao, K.Q., Wu, W., Gelatos, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 70 KB

english, 1998

20

Process simplification in DRAM manufacturing

Thakur, R.P.S., DeBoer, S.J., Ping, E.-X., Jesse, C.A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 235 KB

english, 1998