Volume 45; Issue 5

IEEE Transactions on Electron Devices

Volume 45; Issue 5

1

Approaches to extra low voltage DRAM operation by SOI-DRAM

Eimori, T., Oashi, T., Morishita, F., Iwamatsu, T., Yamaguchi, Y., Okuda, F., Shimomura, K., Shimano, H., Sakashita, N., Arimoto, K., Inoue, Y., Komori, S., Inuishi, M., Nishimura, T., Miyoshi, H.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 398 KB

english, 1998

2

Fully-depleted SOI CMOS for analog applications

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 171 KB

english, 1998

3

Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling

Raskin, J.-P., Gillon, R., Jian Chen, Vanhoenacker-Janvier, D., Colinge, J.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 313 KB

english, 1998

4

Modeling of SOI-MOS capacitors C-V behavior: partially- and fully-depleted cases

Ikraiam, F.A., Beck, R.B., Jakubowski, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 164 KB

english, 1998

5

Noise contribution of the body resistance in partially-depleted SOI MOSFETs

Faccio, F., Anghinolfi, F., Heijne, E.H.M., Jarron, P., Cristoloveanu, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 151 KB

english, 1998

6

Suspended SOI structure for advanced 0.1-μm CMOS RF devices

Hisamoto, D., Tanaka, S., Tanimoto, T., Kimura, S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 220 KB

english, 1998

7

Advanced thin-film silicon-on-sapphire technology: microwave circuit applications

Johnson, R.A., de la Houssaye, P.R., Chang, C.E., Pin-Fan Chen, Wood, M.E., Garcia, G.A., Lagnado, I., Asbeck, P.M.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 278 KB

english, 1998

8

Design issues and insights for low-voltage high-density SOI DRAM

Fossum, J.G., Meng-Hsueh Chiang, Houston, T.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 181 KB

english, 1998

9

Body-contacted SOI MOSFET structure and its application to DRAM

Yo-Hwan Koh, Min-Rok Oh, Jong-Wook Lee, Ji-Woon Yang, Won-Chang Lee, Hyung-Ki Kim

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 181 KB

english, 1998

10

Suppression of parasitic bipolar action in ultra-thin-film fully-depleted CMOS/SIMOX devices by Ar-ion implantation into source/drain regions

Ohno, T., Takahashi, M., Kado, Y., Tsuchiya, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 167 KB

english, 1998

11

BESS: a source structure that fully suppresses the floating body effects in SOI CMOSFETs

Horiuchi, M., Tamura, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 249 KB

english, 1998

12

SOI MOSFET with buried body strap by wafer bonding

Kuehne, S.C., Chan, A.B.Y., Nguyen, C.T., Wong, S.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 248 KB

english, 1998

13

Advanced technologies for optimized sub-quarter-micrometer SOI CMOS devices

Hsiao, T.C., Ping Liu, Woo, J.C.S.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 207 KB

english, 1998

14

Thin silicide development for fully-depleted SOI CMOS technology

Liu, H.I., Burns, J.A., Keast, C.L., Wyatt, P.W.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 168 KB

english, 1998

15

Impact of scaling silicon film thickness and channel width on SOI MOSFET with reoxidized MESA isolation

Fung, S.K.H., Chan, M., Ko, P.K.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 202 KB

english, 1998

16

High-current small-parasitic-capacitance MOSFET on a poly-Si interlayered (PSI:Ψ) SOI wafer

Horiuchi, M., Teshima, T., Tokumasu, K., Yamaguchi, K.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 151 KB

english, 1998

17

Three mechanisms determining short-channel effects in fully-depleted SOI MOSFETs

Tsuchiya, T., Sato, Y., Tomizawa, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 135 KB

english, 1998

18

Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

Gamiz, F., Lopez-Villanueva, J.A., Roldan, J.B., Carceller, J.E., Cartujo, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 99 KB

english, 1998

19

Semiconductor thickness effects in the double-gate SOI MOSFET

Majkusiak, B., Janik, T., Walczak, J.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 214 KB

english, 1998

20

Monitoring hot-carrier degradation in SOI MOSFETs by hot-carrier luminescence techniques

Selmi, L., Pavesi, M., Wong, H.-S.P., Acovic, A., Sangiorgi, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 130 KB

english, 1998

21

Hot-carrier effects and lifetime prediction in off-state operation of deep submicron SOI N-MOSFETs

Shing-Hwa Renn, Rauly, E., Pelloie, J.-L., Balestra, F.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 244 KB

english, 1998

22

Opposite-channel-based injection of hot-carriers in SOI MOSFET's: physics and applications

Ioannou, D.E., Duan, F.L., Sinha, S.P., Zaleski, A.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 182 KB

english, 1998

23

Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT

Nagapudi, V., Sunkavalli, R., Jayant Baliga, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1998

Language:

english

File:

PDF, 166 KB

english, 1998