Volume 49; Issue 5

IEEE Transactions on Electron Devices

Volume 49; Issue 5

1

Temperature-dependent nonlinearities in GaN/AlGaN HEMTs

Islam, S.S., Mehdi Anwar, A.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 353 KB

english, 2002

2

Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain

Shengdong Zhang, Ruqi Han, Sin, J.K.O., Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 357 KB

english, 2002

3

Comparison of DC and high-frequency performance of zinc-doped and carbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapor deposition

Delong Cui, Pavlidis, D., Hsu, S.S.H., Eisenbach, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 298 KB

english, 2002

4

Evaluation of CVD/PVD multilayered seed for electrochemical deposition of Cu-damascene interconnects

Furuya, A., Tagami, M., Shiba, K., Kikuta, K., Hayashi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 259 KB

english, 2002

5

HCl-free selective epitaxial Si-Ge growth by LPCVD for high-frequency HBTs

Kiyota, Y., Udo, T., Hashimoto, T., Kodama, A., Shimamoto, H., Hayami, R., Ohue, E., Washio, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 271 KB

english, 2002

6

A numerical analysis of a CMOS image sensor with a simple fixed-pattern-noise-reduction technology

Yonemoto, K., Sumi, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 321 KB

english, 2002

7

Analytical charge collection and MTF model for photodiode-based CMOS imagers

Lin, C.-S.S., Mathur, B.P., Chang, M.-C.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 546 KB

english, 2002

8

A new mixed-mode sustain method to improve the luminous efficiency of alternating current plasma display panels

Shin-Tai Lo, Chern-Lin Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 353 KB

english, 2002

9

Gain-bandwidth characteristics of thin avalanche photodiodes

Hayat, M.M., Oh-Hyun Kwon, Yi Pan, Sotirelis, P., Campbell, J.C., Saleh, B.E.A., Teich, M.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 400 KB

english, 2002

10

A modified ramp waveform to reduce reset period in AC plasma display panel

Chung-Hoo Park, Sung-Hyun Lee, Dong-Hyun Kim, Jae-Hwa Ryu, Ho-Jun Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 400 KB

english, 2002

11

Damage generation and location in n- and p-MOSFETs biased in the Substrate-Enhanced Gate Current regime

Driussi, F., Esseni, D., Selmi, L., Piazza, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 344 KB

english, 2002

12

Design methodology of the high performance large-grain polysilicon MOSFET

Jagar, S., Hongmei Wang, Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 319 KB

english, 2002

13

A novel nonvolatile memory cell suitable for both flash and byte-writable applications

Caywood, J.M., Chih-Jen Huang, Chang, Y.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 271 KB

english, 2002

14

Speed superiority of scaled double-gate CMOS

Fossum, J.G., Lixin Ge, Meng-Hsueh Chiang

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 237 KB

english, 2002

15

Modeling of the reverse characteristics of a-Si:H TFTs

Servati, P., Nathan, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 325 KB

english, 2002

16

High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films

Serikawa, T., Omata, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 261 KB

english, 2002

17

The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance

Mohapatra, N.R., Desai, M.P., Narendra, S.G., Rao, V.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 276 KB

english, 2002

18

Models for subthreshold and above-threshold currents in 0.1-μm pocket n-MOSFETs for low-voltage applications

Yon-Sup Pang, Brews, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 376 KB

english, 2002

19

Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation

Chien-Hao Chen, Yean-Kuen Fang, Shyh-Fann Ting, Wen-Tse Hsieh, Chih-Wei Yang, Tzu-Hsuan Hsu, Mo-Chiun Yu, Tze-Liang Lee, Shih-Chang Chen, Chen-Hua Yu, Mong-Song Liang

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 321 KB

english, 2002

20

Size dependence of the magnetic and electrical properties of the spin-valve transistor

Sungdong Kim, van't Erve, O.M.J., Vlutters, R., Jansen, R., Lodder, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 246 KB

english, 2002

21

Low-power high-performance double-gate fully depleted SOI circuit design

Rongtian Zhang, Roy, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 434 KB

english, 2002

22

The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBTs

Borgarino, M., Bary, L., Vescovi, D., Menozzi, R., Monroy, A., Laurens, M., Plana, R., Fantini, F., Graffeuil, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 333 KB

english, 2002

23

Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 μm gate length MOS transistors

Sakalas, P., Zirath, H.G., Litwin, A., Schroter, M., Matulionis, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 547 KB

english, 2002

24

Linearity and low-noise performance of SOI MOSFETs for RF applications

Adan, A.O., Yoshimasu, T., Shitara, S., Tanba, N., Fukurni, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 525 KB

english, 2002

25

Quantum C-V modeling in depletion and inversion: accurate extraction of electrical thickness of gate oxide in deep submicron MOSFETs

Wuyun Quan, Kim, D.M., Hi-Deok Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 286 KB

english, 2002

26

A high-voltage monolithic isolator for a communication network interface

Akiyama, N., Kojima, Y., Nemoto, M., Yukutake, S., Iwasaki, T., Amishiro, M., Kanekawa, N., Watanabe, A., Takeuchi, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 319 KB

english, 2002

27

Optimum design for a thermally stable multifinger power transistor

Chih-Hao Liao, Chien-Ping Lee, Wang, N.L., Lin, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 328 KB

english, 2002

28

Optimum design for a thermally stable multifinger power transistor with temperature-dependent thermal conductivity

Chih-Hao Liao, Chien-Ping Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 327 KB

english, 2002

29

Modeling of the CoolMOSTM transistor - Part I: Device physics

Daniel, B.J., Parikh, C.D., Patil, M.B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 318 KB

english, 2002

30

Modeling of the CoolMOSTM transistor. II. DC model and parameter extraction

Daniel, B.J., Parikh, C.D., Patil, M.B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 284 KB

english, 2002

31

Uncooled infrared microbolometers on a flexible substrate

Yaradanakul, A., Butler, D.P., Celik-Butler, Z.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 283 KB

english, 2002

32

A simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices

Jin He, Yangyuan Wang, Xing Zhang, Xuemei Xi, Mansun Chan, Ru Huang, Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 280 KB

english, 2002

33

N+/P junction leakage characteristics of Co salicide process for 0.15 μm CMOS devices

Key-Min Lee, Chel-Jong Choi, Joo-Hyoung Lee, Tae-Yeon Seong, Young-Jin Park, Sung-Kwon Hong, Jae-Gyung Ahn, Hi-Deok Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 205 KB

english, 2002

34

Substrate and epitaxial issues for SiC power devices

Spencer, M.G., Palmour, J., Carter, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 267 KB

english, 2002

35

Experimental verification of the dependence of bipolar transistor flicker noise on power dissipation

Forbes, L., Zhang, C.W., Zhang, B.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 226 KB

english, 2002

36

4H-SiC rectifiers with dual metal planar Schottky contacts

Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 217 KB

english, 2002

37

Highly stable hydrogenated amorphous silicon germanium solar cells

Gordijn, A., Zambrano, R.J., Rath, J.K., Schropp, R.E.I.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 231 KB

english, 2002

38

Changes to the editorial board

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 146 KB

english, 2002