IEEE Transactions on Electron Devices

1

High-voltage single-crystal diamond diodes

Twitchen, D.J., Whitehead, A.J., Coe, S.E., Isberg, J., Hammersberg, J., Wikstrom, T., Johansson, E.

Journal:

Year:

2004

Language:

english

File:

PDF, 185 KB

english, 2004

2

Unified AC model for the resonant tunneling diode

Qingmin Liu, Seabaugh, A., Chahal, P., Morris, F.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 206 KB

english, 2004

3

Effect of stochastic dead space on noise in avalanche photodiodes

Oh-Hyun Kwon, Hayat, M.M., Campbell, J.C., Saleh, B.E.A., Teich, M.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 278 KB

english, 2004

4

High-power SOI vertical DMOS transistors with lateral drain contacts: Process developments, characterization, and modeling

Pinardi, K., Heinle, U., Bengtsson, S., Olsson, J., Colinge, J.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 244 KB

english, 2004

5

Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

Pirovano, A., Lacaita, A.L., Pellizzer, F., Kostylev, S.A., Benvenuti, A., Bez, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 345 KB

english, 2004

6

Analysis on operation of a F-FET memory with an intermediate electrode

Khoa, T.D., Horita, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 209 KB

english, 2004

7

Using layout technique and direct-tunneling mechanism to promote DC performance of partially depleted SOI devices

Shiao-Shien Chen, Shiang Huang-Lu, Tien-Hao Tang

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 515 KB

english, 2004

8

The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs

Doo-Hyeb Youn, Jae-Hoon Lee, Kumar, V., Kyu-Seok Lee, Jung-Hee Lee, Adesida, I.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 245 KB

english, 2004

9

Substrate noise-coupling characterization and efficient suppression in CMOS technology

Wen-Kuan Yeh, Shuo-Mao Chen, Yean-Kuen Fang

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 312 KB

english, 2004

10

Simulation of quantum transport in monolithic ICs based on In0.53Ga0.47As-In0.52Al0.48As RTDs and HEMTs with a quantum hydrodynamic transport model

Hontschel, J., Stenzel, R., Klix, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 397 KB

english, 2004

11

Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters

Nair, D.R., Mahapatra, S., Shukuri, S., Bude, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 344 KB

english, 2004

12

Fabrication and performance of a novel suspended RF spiral inductor

Xi-Ning Wang, Xiao-Lin Zhao, Yong Zhou, Xu-Han Dai, Bing-Chu Cai

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 164 KB

english, 2004

13

Reduction of base-transit time of InP-GaInAs HBTs due to electron injection from an energy ramp and base-composition grading

Zohar, G., Cohen, S., Sidorov, V., Gavrilov, A., Sheinman, B., Ritter, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 188 KB

english, 2004

14

Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

Dollfus, P., Bournel, A., Galdin, S., Barraud, S., Hesto, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 433 KB

english, 2004

15

Full band approach to tunneling in MOS structures

Sacconi, F., Di Carlo, A., Lugli, P., Stadele, M., Jancu, J.-M.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 428 KB

english, 2004

16

Influence of dielectric constant distribution in gate dielectrics on the degradation of electron mobility by remote Coulomb scattering in inversion layers

Ono, M., Ishihara, T., Nishiyama, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 209 KB

english, 2004

17

High activity of B during solid-phase epitaxy in a pre-amorphized layer formed by Ge ion implantation and deactivation during a subsequent thermal process

Suzuki, K., Tashiro, H., Narita, K., Kataoka, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 254 KB

english, 2004

18

A-Si:H-based LCLV with an CdTe and VOPc multiple absorption layers

Qi Kangcheng, Cheng Jianbo, Ge Changjun, Wang Jimin

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 111 KB

english, 2004

19

Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices

Yung Fu Chong, Gossmann, H.-J.L., Pey, K.-L., Thompson, M.O., Wee, A.T.S., Tung, C.H.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 351 KB

english, 2004

20

Modeling spiral inductors in SOS processes

Kuhn, W.B., Xin He, Mojarradi, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 425 KB

english, 2004

21

Resonant response of a FET to an AC signal: influence of magnetic field, device length, and temperature

Kushwaha, M.S., Vasilopoulos, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 676 KB

english, 2004

22

An endurance evaluation method for flash EEPROM

Zous, N.-K., Yin-Jen Chen, Chi-Yuan Chin, Tsai, W.-J., Tao-Cheng Lu, Ming-Shiang Chen, Wen-Pin Lu, Tahui Wang, Pan, S.C., Chih-Yuan Lu

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 331 KB

english, 2004

23

On the calculation of the quasi-bound-state energies and lifetimes in inverted MOS structures with ultrathin oxides and its application to the direct tunneling current

Govoreanu, B., Magnus, W., Schoenmaker, W., Van Houdt, J., De Meyer, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 408 KB

english, 2004

24

Low-frequency noise behavior of SiO2--HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

Simoen, E., Mercha, A., Pantisano, L., Claeys, C., Young, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 282 KB

english, 2004

25

Low-frequency noise in offset-gated polysilicon TFTs

Hastas, N.A., Dimitriadis, C.A., Kamarinos, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 172 KB

english, 2004

26

0.13-μm low-κ-Cu CMOS logic-based technology for 2.1-gb high data rate read-channel

Jyh Chyurn Guo, Lien, W.Y., Tsai, T.L., Chen, S.M., Wu, C.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 939 KB

english, 2004

27

A novel low on-resistance Schottky-barrier diode with p-buried floating layer structure

Saito, W., Omura, I., Tokano, K., Ogura, T., Ohashi, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 301 KB

english, 2004

28

Test structure measuring inter- and intralayer coupling capacitance of interconnection with subfemtofarad resolution

Kunikiyo, T., Watanabe, T., Kanamoto, T., Asazato, H., Shirota, M., Eikyu, K., Ajioka, Y., Makino, H., Ishikawa, K., Iwade, S., Inoue, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 657 KB

english, 2004

29

Band diagram and carrier conduction mechanisms in ZrO2 MIS structures

Yamaguchi, T., Satake, H., Fukushima, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 476 KB

english, 2004

30