IEEE Transactions on Electron Devices

1

The Effect of IEC-Like Fast Transients on -Triggered ESD Power Clamps

Cheng-Cheng Yen, Ming-Dou Ker

Journal:

Year:

2009

Language:

english

File:

PDF, 1.01 MB

english, 2009

2

Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors

Shimeng Yu, Yuning Zhao, Lang Zeng, Gang Du, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.24 MB

english, 2009

3

Conductance Asymmetry of Graphene p-n Junction

Low, T., Seokmin Hong, Appenzeller, J., Datta, S., Lundstrom, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 888 KB

english, 2009

4

Implementation of Electron–Phonon Scattering in a CNTFET Compact Model

Fregonese, S., Goguet, J., Maneux, C., Zimmer, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 837 KB

english, 2009

5

A Simple Equivalent Circuit Analysis of the Dielectric Loss in a Helical Slow-Wave Structure of a Traveling-Wave Tube

Datta, S.K., Kumar, L., Basu, B.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 425 KB

english, 2009

6

A Simple Closed-Form Formula for Plasma-Frequency Reduction Factor for a Solid Cylindrical Electron Beam

Kumar Datta, S., Kumar, L.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 323 KB

english, 2009

7

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Layers

Alptekin, E., Kirkpatrick, C.J., Misra, V., Ozturk, M.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 463 KB

english, 2009

8

Compact Channel Noise Models for Deep-Submicron MOSFETs

Zhiyuan Li, Jianguo Ma, Yizheng Ye, Mingyan Yu

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 342 KB

english, 2009

9

The Gate-Controlled Diode, High-Frequency, and Quasi-Static – Techniques for Characterizing Advanced Vertical Trenched Power MOSFETs

Pan, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 898 KB

english, 2009

10

A Study of Self-Aligned Nitride Erasable OTP Cell by 45-nm CMOS Fully Compatible Process

Chia-En Huang, Ying-Je Chen, Han-Chao Lai, Ya-Chin King, Chrong Jung Lin

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.30 MB

english, 2009

11

High-Speed InGaAs P-I-N Photodetector With Planar Buried Heterostructure

Wang, Y.S., Chang, S.J., Tsai, C.L., Wu, M.C., Chiou, Y.Z., Huang, Y.H., Lin, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 287 KB

english, 2009

12

Analysis of the Bipolar Current Mirror Including Electrothermal and Avalanche Effects

Rinaldi, N., d'Alessandro, V., Nanver, L.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 674 KB

english, 2009

13

Physical Model of Field Enhancement and Edge Effects of FinFET Charge-Trapping NAND Flash Devices

Tzu-Hsuan Hsu, Hang-Ting Lue, Ya-Chin King, Yi-Hsuan Hsiao, Sheng-Chih Lai, Kuang-Yeu Hsieh, Rich Liu, Chih-Yuan Lu

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.21 MB

english, 2009

14

Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors With Ultrathin Oxides and High- Dielectrics

Chih-Hao Chen, Kai-Chieh Chuang, Jenn-Gwo Hwu

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 466 KB

english, 2009

15

Multi-Channel Field-Effect Transistor (MCFET)—Part II: Analysis of Gate Stack and Series Resistance Influence on the MCFET Performance

Bernard, E., Ernst, T., Guillaumot, B., Vulliet, N., Garros, X., Coronel, P., Skotnicki, T., Deleonibus, S., Faynot, O.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.46 MB

english, 2009

16

Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies

Chen, C., Abe, K., Kumomi, H., Kanicki, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 780 KB

english, 2009

17

Pseudo-MOSFET Substrate Effects of Drain Current Hysteresis and Transient Behavior

Kihoon Park, Nayak, P., Cristoloveanu, S., Schroder, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 976 KB

english, 2009

18

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

Saxena, R.S., Kumar, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 538 KB

english, 2009

19

Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs

Poli, S., Pala, M.G., Poiroux, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 786 KB

english, 2009

20

Pulsed – Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling

Young, C.D., Yuegang Zhao, Dawei Heh, Rino Choi, Byoung Hun Lee, Bersuker, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 797 KB

english, 2009

21

Circuit-Level Impact of a-Si:H Thin-Film-Transistor Degradation Effects

Allee, D.R., Clark, L.T., Vogt, B.D., Shringarpure, R., Venugopal, S.M., Uppili, S.G., Kaftanoglu, K., Shivalingaiah, H., Li, Z.P., Ravindra Fernando, J.J., Bawolek, E.J., O'Rourke, S.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.11 MB

english, 2009

22

Ultra High-Stress Liner Comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors

Kian-Ming Tan, Mingchu Yang, Tsung-Yang Liow, Lee, R.T.P., Yee-Chia Yeo

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.08 MB

english, 2009

23

Interface-Engineered High-Mobility High-/Ge pMOSFETs With 1-nm Equivalent Oxide Thickness

Ruilong Xie, Thanh Hoa Phung, Wei He, Mingbin Yu, Chunxiang Zhu

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.02 MB

english, 2009

24

Solid-State Impact-Ionization Multiplier With P-N Junction Injection Node

Johnson, M.S., Beutler, J.L., Nelson, A.P., Hawkins, A.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 378 KB

english, 2009

25

Dual-Material Double-Gate SOI n-MOSFET: Gate Misalignment Analysis

Sharma, R.K., Gupta, R., Gupta, M., Gupta, R.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 410 KB

english, 2009

26

Multi-Channel Field-Effect Transistor (MCFET)—Part I: Electrical Performance and Current Gain Analysis

Bernard, E., Ernst, T., Guillaumot, B., Vulliet, N., Coronel, P., Skotnicki, T., Deleonibus, S., Faynot, O.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 1.41 MB

english, 2009

27

Performance Evaluation of GaAs–GaP Core–Shell-Nanowire Field-Effect Transistors

Yuhui He, Yuning Zhao, Chun Fan, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 650 KB

english, 2009

28

EDS Membership at Your Service!

Jindal, R. P.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 23 KB

english, 2009

30