Volume 57; Issue 8

IEEE Transactions on Electron Devices

Volume 57; Issue 8

1

Quantum Computing and Digital Computing

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 30 KB

english, 2010

2

A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET Structure

Sunyeong Lee, Yong Woo Jeon, Tsu-Jae King Liu, Dae Hwan Kim, Dong Myong Kim

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.09 MB

english, 2010

3

A 1300-V 0.34- Partial SOI LDMOSFET With Novel Dual Charge Accumulation Layers

Elahipanah, H., Orouji, A.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.09 MB

english, 2010

4

Electroluminescence From Ferromagnetic Fe-Doped ZnO Nanorod Arrays on p-Si

Bo Ling, Jun Liang Zhao, Xiao Wei Sun, Swee Tiam Tan, Yi Yang, Zhi Li Dong

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 526 KB

english, 2010

5

Bipolar Mode Operation and Scalability of Double-Gate Capacitorless 1T-DRAM Cells

Giusi, G., Alam, M.A., Crupi, F., Pierro, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 374 KB

english, 2010

6

Sb-HEMT: Toward 100-mV Cryogenic Electronics

Noudéviwa, A., Roelens, Y., Danneville, F., Olivier, A., Wichmann, N., Waldhoff, N., Lepilliet, S., Dambrine, G., Desplanque, L., Wallart, X., Moschetti, G., Grahn, J., Bollaert, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 857 KB

english, 2010

7

Loss Measurement of Aluminum Thin-Film Coplanar Waveguide (CPW) Lines at Microwave Frequencies

Ramazani, M., Miladi, H., Shahabadi, M., Mohajerzadeh, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 454 KB

english, 2010

8

A Unified Method for Calculating Capacitive and Resistive Coupling Exploiting Geometry Constraints on Lightly and Heavily Doped CMOS Processes

Bontzios, Y.I., Hatzopoulos, A.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.20 MB

english, 2010

9

Fundamental Limitations to the Width of the Programmed Distribution of nor Flash Memories

Compagnoni, C.M., Chiavarone, L., Calabrese, M., Ghidotti, M., Lacaita, A.L., Spinelli, A.S., Visconti, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 288 KB

english, 2010

10

Investigation of the Slow-Wave Properties of a Dielectric-Lined Azimuthally Periodic Circular Waveguide for TWT

Yang Liu, Yanyu Wei, Yubin Gong, Wenxiang Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 309 KB

english, 2010

11

A Compact Space and Efficient Drain Current Design for Multipillar Vertical MOSFETs

Sakui, K., Endoh, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.38 MB

english, 2010

12

Reduction of Bipolar Disturb of Floating-Body Cell (FBC) by Silicide and Thin Silicon Film Formed at Source and Drain Regions

Hamamoto, T., Fukuzumi, Y., Higashi, T., Nakajima, H., Minami, Y., Shino, T., Ohsawa, T., Nitayama, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 883 KB

english, 2010

13

Thermal Design of Multifinger Bipolar Transistors

La Spina, L., d'Alessandro, V., Russo, S., Nanver, L.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 905 KB

english, 2010

14

Modeling Issues and Performance Analysis of High-Speed Interconnects Based on a Bundle of SWCNT

Giustiniani, A., Tucci, V., Zamboni, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.01 MB

english, 2010

15

Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of -Based Memory Films

Meng-Han Lin, Ming-Chi Wu, Chen-Hsi Lin, Tseung-Yuen Tseng

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 899 KB

english, 2010

16

The Concept: -Type Silicon Solar Cells With Surface-Passivated Screen-Printed Aluminum-Alloyed Rear Emitter

Bock, R., Schmidt, J., Mau, S., Hoex, B., Brendel, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 858 KB

english, 2010

17

Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process

Charbonnier, M., Leroux, C., Cosnier, V., Besson, P., Martinez, E., Benedetto, N., Licitra, C., Rochat, N., Gaumer, C., Kaja, K., Ghibaudo, G., Martin, F., Reimbold, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1000 KB

english, 2010

18

Analytical Approximation for the Surface Potential in n-Channel MOSFETs Considering Quantum–Mechanical Effects

Jayadeva, G.S., DasGupta, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 316 KB

english, 2010

19

Performance and Reliability Study of Single-Layer and Dual-Layer Platinum Nanocrystal Flash Memory Devices Under NAND Operation

Singh, P.K., Bisht, G., Auluck, K., Sivatheja, M., Hofmann, R., Singh, K.K., Mahapatra, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.12 MB

english, 2010

20

Threshold Voltage and Mobility Extraction by Ultrafast Switching Measurement on NBTI

Hu, Y.Z., Ang, D.S., Teo, Z.Q.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 395 KB

english, 2010

21

A New Transient Model for Recovery and Relaxation Oscillations in Phase-Change Memories

Lavizzari, S., Ielmini, D., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 644 KB

english, 2010

22

Nonvolatile Crossbar Switch Using Solid Electrolyte

Tada, M., Sakamoto, T., Banno, N., Aono, M., Hada, H., Kasai, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.08 MB

english, 2010

23

Analytical Model of Short-Channel Double-Gate JFETs

Jiwon Chang, Kapoor, A.K., Register, L.F., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 813 KB

english, 2010

24

Industrially Feasible Rear Passivation and Contacting Scheme for High-Efficiency n-Type Solar Cells Yielding a of 700 mV

Suwito, D., Jäger, U., Benick, J., Janz, S., Hermle, M., Glunz, S.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 280 KB

english, 2010

25

Harvesting and Transferring Vertical Pillar Arrays of Single-Crystal Semiconductor Devices to Arbitrary Substrates

Logeeswaran, V.J., Katzenmeyer, A.M., Islam, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 740 KB

english, 2010

26

Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

Marinella, M.J., Schroder, D.K., Gilyong Chung, Loboda, M.J., Isaacs-Smith, T., Williams, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 812 KB

english, 2010

27

Investigation of Moisture Uptake in Low- Dielectric Materials

Kubasch, C., Klaus, C., Ruelke, H., Mayer, U., Bartha, J.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 822 KB

english, 2010

28

Defect Generation at Charge-Passivated – Interfaces by Ultraviolet Light

Black, L.E., McIntosh, K.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 450 KB

english, 2010

29

Characterization and Analysis of the Temperature-Dependent on -Resistance in AlGaN/GaN Lateral Field-Effect Rectifiers

King-Yuen Wong, Wanjun Chen, Chen, K.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 657 KB

english, 2010

30

Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices

Bolotnikov, A.V., Muzykov, P.G., Qingchun Zhang, Agarwal, A.K., Sudarshan, T.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 979 KB

english, 2010

31

A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

Qimeng Jiang, Minzhi Wang, Xingbi Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 821 KB

english, 2010

32

Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.12 MB

english, 2010

33

Core–Shell Nanowire Tunneling Field-Effect Transistors

Junghyo Nah, En-Shao Liu, Varahramyan, K.M., Tutuc, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 563 KB

english, 2010

34

P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain

Sung-Jin Choi, Jin-Woo Han, Dong-Il Moon, Sungho Kim, Moongyu Jang, Yang-Kyu Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 879 KB

english, 2010

35

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 72 KB

english, 2010

36

External Stresses on Tensile and Compressive Contact Etching Stop Layer SOI MOSFETs

Wen-Teng Chang, Chih-Chung Wang, Jian-An Lin, Wen-Kuan Yeh

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 301 KB

english, 2010

37

The Impact of Interface Layer on a Pd/n-LTPS Schottky Diode Hydrogen Detecting Performances

Yen-Ting Chiang, Yean-Kuen Fang, Tse-Heng Chou, Cheng-I Lin, Feng-Renn Juang, Kung-Cheng Lin

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 937 KB

english, 2010

38

Fast Lateral Amorphous-Selenium Metal–Semiconductor–Metal Photodetector With High Blue-to-Ultraviolet Responsivity

Wang, K., Chen, F., Allec, N., Karim, K. S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 668 KB

english, 2010

39

Model and Performance Evaluation of Field-Effect Transistors Based on Epitaxial Graphene on SiC

Cheli, M., Michetti, P., Iannaccone, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 531 KB

english, 2010

40

Fabrication and Characterization of GaAs MOS Capacitor With CVD Grown Polymer-Based Thin Film as a Gate Dielectric

Oulachgar, E.H., Aktik, C., Scarlete, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 438 KB

english, 2010

41

Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon Nanocrystals

Tsung-Yu Chiang, Yi-Hong Wu, Ma, W.C.-Y., Po-Yi Kuo, Kuan-Ti Wang, Chia-Chun Liao, Chi-Ruei Yeh, Wen-Luh Yang, Tien-Sheng Chao

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.44 MB

english, 2010

42

Tunneling Magnetoresistance Properties in Ballistic Spin Field-Effect Transistors

Kai-Ming Jiang, Rong Zhang, Jun Yang, Chun-Xiao Yue, Zu-Yao Sun

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 908 KB

english, 2010

43

Changes in the Editorial Board

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 58 KB

english, 2010

44

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 5 KB

2010

45

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 39 KB

english, 2010

46

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 52 KB

english, 2010

47

The 23rd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 11)

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 1.38 MB

2010

48

Nanotech Malaysia 2010: International Conference on Enabling Science and Nanotechnology

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 1.34 MB

2010

49

2010 IEEE International Electron Devices Meeting (IEDM)

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 1.03 MB

2010

50

Nonvolatile Schottky Barrier Multibit Cell With Source-Side Injected Programming and Reverse Drain-Side Hole Erasing

Chun-Hsing Shih, Ji-Ting Liang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 905 KB

english, 2010

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