Volume 58; Issue 3

IEEE Transactions on Electron Devices

Volume 58; Issue 3

1

Special issue on materials, processing and reliability of 3D interconnects

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 134 KB

2011

2

Physical Foundation of a Recently Proposed Schottky-Contact Model

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 77 KB

english, 2011

3

Two-Dimensional Analysis of Field-Plate Effects on Surface-State-Related Current Transients and Power Slump in GaAs FETs

Horio, K., Tanaka, T., Itagaki, K., Nakajima, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 235 KB

english, 2011

4

Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications

Sciuto, A., D'Arrigo, G., Roccaforte, F., Mazzillo, M., Spinella, R.C., Raineri, V.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 436 KB

english, 2011

5

Thermal Stress Analysis of -Based Phase-Change Memory Devices

Sangwoo Shin, Kyung Min Kim, Jiwoon Song, Hyung Keun Kim, Doo Jin Choi, Hyung Hee Cho

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.23 MB

english, 2011

6

Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo

Riddet, C., Alexander, C., Brown, A.R., Roy, S., Asenov, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 896 KB

english, 2011

7

Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

SangBum Kim, Byoungil Lee, Asheghi, M., Hurkx, F., Reifenberg, J.P., Goodson, K.E., Wong, H.-S.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 926 KB

english, 2011

8

A Two-Stage Charge Transfer Active Pixel CMOS Image Sensor With Low-Noise Global Shuttering and a Dual-Shuttering Mode

Yasutomi, K., Itoh, S., Kawahito, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.25 MB

english, 2011

9

Color Range Images Captured by a Four-Phase CMOS Image Sensor

Dong-Long Lin, Ching-Chun Wang, Chia-Ling Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.06 MB

english, 2011

10

Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability—A Model-Based Approach

Ming-Long Fan, Yu-Sheng Wu, Vita Pi-Ho Hu, Chien-Yu Hsieh, Pin Su, Ching-Te Chuang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.58 MB

english, 2011

11

Integrated Batteryless Electron Timer

Watanabe, H., Ushijima, T., Hagiwara, N., Okada, C., Tanabe, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 994 KB

english, 2011

12

Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated With a Full Replacement Gate Process

Özben, E.D., Lopes, J.M.J., Nichau, A., Lupták, R., Lenk, S., Besmehn, A., Bourdelle, K.K., Qing-Tai Zhao, Schubert, J., Mantl, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 828 KB

english, 2011

13

The Mechanism of Enhanced Diffusion of Phosphorus in Silicon During Rapid Photothermal Processing of Solar Cells

Shishiyanu, S., Singh, R., Shishiyanu, T., Asher, S., Reedy, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 197 KB

english, 2011

14

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

Huu-Nha Nguyen, Querlioz, D., Galdin-Retailleau, S., Dollfus, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 644 KB

english, 2011

15

Embedded Memory Capability of Four-Terminal Relay Technology

Jaeseok Jeon, Wookhyun Kwon, Tsu-Jae King Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 460 KB

english, 2011

16

Integration of Self-Assembled Redox Molecules in Flash Memory Devices

Shaw, J., Yu-Wu Zhong, Hughes, K.J., Tuo-Hung Hou, Raza, H., Rajwade, S., Bellfy, J., Engstrom, J.R., Abruña, H.D., Kan, E.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 401 KB

english, 2011

17

Analysis of Multipactor RF Breakdown Thresholds in Elliptical Waveguides

Frotanpour, A., Dadashzadeh, G., Shahabadi, M., Gimeno, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 386 KB

english, 2011

18

A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory

Huan-Chi Ma, You-Liang Chou, Jung-Piao Chiu, Yueh-Ting Chung, Tung-Yang Lin, Tahui Wang, Yuan-Peng Chao, Kuang-Chao Chen, Chih-Yuan Lu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 614 KB

english, 2011

19

Completely Quantum–Mechanical Extraction of Equivalent Oxide Thickness of PMOS Gate Insulator

Hiraiwa, A., Shima, A., Ishikawa, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 353 KB

english, 2011

20

Coplanar Waveguides on High-Resistivity Silicon Substrates With Attenuation Constant Lower Than 1 dB/mm for Microwave and Millimeter-Wave Bands

Makita, T., Tamai, I., Seki, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 381 KB

english, 2011

21

Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

Pil Sung Park, Rajan, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 791 KB

english, 2011

22

FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics

Vita Pi-Ho Hu, Ming-Long Fan, Chien-Yu Hsieh, Pin Su, Ching-Te Chuang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.42 MB

english, 2011

23

Three-Dimensional Hybrid Integration Technology of CMOS, MEMS, and Photonics Circuits for Optoelectronic Heterogeneous Integrated Systems

Kang-Wook Lee, Noriki, A., Kiyoyama, K., Fukushima, T., Tanaka, T., Koyanagi, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.84 MB

english, 2011

24

Driving Device Comparison for Phase-Change Memory

Lin Li, Kailiang Lu, Rajendran, B., Happ, T.D., Hsiang-Lan Lung, Chung Lam, Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.04 MB

english, 2011

25

Tunneling Processes in a Triangular Multibarrier Semiconductor Heterostructure

Leite, T.N., de Oliveira, H.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 134 KB

english, 2011

26

Effects of Cathode Confinement on the Performance of Polymer/Fullerene Photovoltaic Cells in the Thermal Treatment

Chunfu Zhang, Yue Hao, Shi-Wun Tong, Zhenhua Lin, Qian Feng, En-Tang Kang, Chunxiang Zhu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 744 KB

english, 2011

27

Fast Transients After the Program/Erase of Flash Memory Stacks With High- Dielectrics

Toledano-Luque, M., Degraeve, R., Zahid, M.B., Kaczer, B., Blomme, P., Kittl, J.A., Jurczak, M., Van Houdt, J., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.41 MB

english, 2011

28

The Soft Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection

Antoniou, M., Udrea, F., Bauer, F., Nistor, I.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.19 MB

english, 2011

29

Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 244 KB

english, 2011

30

High-Performance GaNAsSb/GaAs 1.55- Waveguide Photodetector

Xu, Z., Saadsaoud, N., Loke, W.K., Tan, K.H., Wicaksono, S., Yoon, S.F., Lecoustre, G., Decoster, D., Chazelas, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 887 KB

english, 2011

31

Proposal of High-Electron Mobility Transistors With Strained InN Channel

Kuzmik, J., Georgakilas, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 156 KB

english, 2011

32

Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor

Chattopadhyay, A., Mallik, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 371 KB

english, 2011

33

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Jia Sun, Jie Jiang, Aixia Lu, Bin Zhou, Qing Wan

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 427 KB

english, 2011

34

A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering

Giusi, G., Iannaccone, G., Crupi, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 298 KB

english, 2011

35

Effect of Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High- Dielectric nMOSFETs

Yu-Ting Chen, Kun-Ming Chen, Cheng-Li Lin, Wen-Kuan Yeh, Guo-Wei Huang, Chien-Ming Lai, Yi-Wen Chen, Che-Hua Hsu, Fon-Shan Huang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.11 MB

english, 2011

36

High-Frequency Behavior of Graphene-Based Interconnects—Part I: Impedance Modeling

Sarkar, D., Chuan Xu, Hong Li, Banerjee, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 936 KB

english, 2011

37

Pierce-Type One-Dimensional Eulerian Hydrodynamic Analysis of a Plasma-Filled Helix Traveling-Wave Tube

Datta, S.K., Kumar, L., Basu, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 601 KB

english, 2011

38

Comprehensive Study on Negative Capacitance Effect Observed in MOS(n) Capacitors With Ultrathin Gate Oxides

Shu-Jau Chang, Jenn-Gwo Hwu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 372 KB

english, 2011

39

Gate-Side and Substrate-Side Oxide Trap and Interface State Generation in Conventional and Nitrided Tunnel Oxides of Floating Gate Cells

Beug, M.F., Tempel, G., Hofmann, K.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 315 KB

english, 2011

40

High-Frequency Behavior of Graphene-Based Interconnects—Part II: Impedance Analysis and Implications for Inductor Design

Sarkar, D., Chuan Xu, Hong Li, Banerjee, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.11 MB

english, 2011

41

Heterogeneous Chip Integration Process for Flexible Wireless Microsystem Application

Tzu-Yuan Chao, Chia-Wei Liang, Cheng, Y.T., Chien-Nan Kuo

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 372 KB

english, 2011

42

A Novel Method to Improve Laser Anneal Worsened Negative Bias Temperature Instability in 40-nm CMOS Technology

Ming-Shing Chen, Yean-Kuen Fang, Feng-Renn Juang, Yen-Ting Chiang, Cheng-I Lin, Tung-Hsing Lee, Chou, S., Ning, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 564 KB

english, 2011

43

A Novel Transparent AZO-Gated pHEMT and Photosensing Characteristics Thereof

Ching-Sung Lee, Bo-Yi Chou, Wei-Chou Hsu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 911 KB

english, 2011

44

Plasmonic Organic Photovoltaic Devices on Transparent Carbon Nanotube Films

Kymakis, E., Stratakis, E., Koudoumas, E., Fotakis, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 376 KB

english, 2011

45

A Locally Amplified Strain Sensor Based on a Piezoelectric Polymer and Organic Field-Effect Transistors

Yu-Jen Hsu, Zhang Jia, Kymissis, I.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 975 KB

english, 2011

46

A New Cost-Effective Metal–Insulator–Metal Capacitor Processed at 350 Using Fully Silicided Amorphous Silicon Electrodes

Jung-Hsiang Lee, Yi-Chang Lin, Bo-Han Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 492 KB

english, 2011

47

Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs

Sheng-Chun Wang, Pin Su, Kun-Ming Chen, Bo-Yuan Chen, Guo-Wei Huang, Cheng-Chou Hung, Sheng-Yi Huang, Cheng-Wen Fan, Chih-Yuh Tzeng, Chou, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.04 MB

english, 2011

48

What Is in a Page Charge?

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 27 KB

english, 2011

49

Mixed-Signal Organic Integrated Circuits in a Fully Photolithographic Dual Threshold Voltage Technology

Nausieda, I., Ryu, K.K., He, D.D., Akinwande, A.I., Bulović, V., Sodini, C.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 733 KB

english, 2011

50

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 73 KB

english, 2011

51

2011 Bipolar/BiCMOS Circuits and Technology Meeting

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 858 KB

2011

52

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 31 KB

english, 2011

53

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 52 KB

english, 2011

54

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 5 KB

2011

55

37th IEEE Photovoltaic Specialists Conference (PVSC)

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 2.15 MB

2011

56

Impacts of Multiple-Gated Configuration on the Characteristics of Poly-Si Nanowire SONOS Devices

Hsing-Hui Hsu, Horng-Chih Lin, Cheng-Wei Luo, Chun-Jung Su, Tiao-Yuan Huang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.81 MB

english, 2011

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