Volume 60; Issue 9

IEEE Transactions on Electron Devices

Volume 60; Issue 9

1

GaN-Based Dual-Color LEDs With $p$-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities

Chi, Kai-Lun, Yeh, Shu-Ting, Yeh, Yu-Hsiang, Lin, Kun-Yan, Shi, Jin-Wei, Wu, Yuh-Renn, Lee, Ming Lun, Sheu, Jinn-Kong

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.19 MB

english, 2013

2

Transmission Line Model for Folded Waveguide Circuits

Antonsen, Thomas M., Vlasov, Alexander N., Chernin, David P., Chernyavskiy, Igor A., Levush, Baruch

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 853 KB

english, 2013

3

3-D Simulations and Design of Multistage Depressed Collectors for Sheet Beam Millimeter Wave Vacuum Electron Devices

Shi, Zongjun, Gamzina, Diana, Barnett, Larry R., Baig, Anisullah, Luhmann, Neville C.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 893 KB

english, 2013

4

Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part II: Characterization

Li, Hong, Liu, Wei, Cassell, Alan M., Kreupl, Franz, Banerjee, Kaustav

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 887 KB

english, 2013

5

Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part I: Process Development

Li, Hong, Liu, Wei, Cassell, Alan M., Kreupl, Franz, Banerjee, Kaustav

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.56 MB

english, 2013

6

Study on a Scaling Length Model for Tapered Tri-Gate FinFET Based on 3-D Simulation and Analytical Analysis

Ko, Myung-Dong, Sohn, Chang-Woo, Baek, Chang-Ki, Jeong, Yoon-Ha

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.63 MB

english, 2013

7

Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

Ding, Yinjie, Cheng, Ran, Koh, Shao-Ming, Liu, Bin, Yeo, Yee-Chia

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.25 MB

english, 2013

8

Electrostatic Modeling and Insights Regarding Multigate Lateral Tunneling Transistors

Pan, Andrew, Chen, Songtao, Chui, Chi On

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.13 MB

english, 2013

9

A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA

Yang, Fu-Jen, Gong, Jeng, Su, Ru-Yi, Huo, Ker-Hsiao, Tsai, Chun-Lin, Cheng, Chih-Chang, Liou, Ruey-Hsin, Tuan, Hsiao-Chin, Huang, Chih-Fang

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.71 MB

english, 2013

10

Experimental Study on a High-Power Subterahertz Source Generated by an Overmoded Surface Wave Oscillator With Fast Startup

Li, Xiaoze, Wang, Jianguo, Sun, Jun, Song, Zhimin, Ye, Hu, Zhang, Yuchuan, Zhang, Lijun, Zhang, Ligang

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 546 KB

english, 2013

11

THRU-Based Cascade De-embedding Technique for On-Wafer Characterization of RF CMOS Devices

Loo, Xi Sung, Yeo, Kiat Seng, Chew, Kok Wai J.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.67 MB

english, 2013

12

AlGaN/SiC Heterojunction Bipolar Transistors Featuring AlN/GaN Short-Period Superlattice Emitter

Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.49 MB

english, 2013

13

Highly Sensitive UV Detection Mechanism in AlGaN/GaN HEMTs

Zaidi, Zaffar H., Houston, Peter A.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 726 KB

english, 2013

14

Zinc Oxide Nanowire Lateral Field Emission Devices and its Application as Display Pixel Structures

Li, Duo, She, Juncong, Xu, Shaozeng, Deng, Shaozhi

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 3.06 MB

english, 2013

15

Flexible Self-Aligned Amorphous InGaZnO Thin-Film Transistors With Submicrometer Channel Length and a Transit Frequency of 135 MHz

Munzenrieder, Niko, Petti, Luisa, Zysset, Christoph, Kinkeldei, Thomas, Salvatore, Giovanni Antonio, Troster, Gerhard

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 3.87 MB

english, 2013

16

Staggered Closed PCM for Stable Rectangular Sheet Electron Beam Transport

Panda, Purna Chandra, Srivastava, Vishnu, Vohra, Anil

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.54 MB

english, 2013

17

Electron Transport Mechanism for Ohmic Contact to GaN/AlGaN/GaN Heterostructure Field-Effect Transistors

Ando, Yuji, Ishikura, Kohji, Murase, Yasuhiro, Asano, Kazunori, Takenaka, Isao, Takahashi, Shinnosuke, Takahashi, Hidemasa, Sasaoka, Chiaki

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.27 MB

english, 2013

18

Performance Analysis of Strained Monolayer ${\rm MoS}_{2}$ MOSFET

Sengupta, Amretashis, Ghosh, Ram Krishna, Mahapatra, Santanu

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.72 MB

english, 2013

19

Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETs

Pala, Marco G., Esseni, David

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

20

Transport Parameters of Inkjet Printed Nanoparticle Silver on Polyimide Substrate Measured at Room and Liquid Nitrogen Temperatures

Menicanin, Aleksandar B., Zivanov, Ljiljana D., Stojanovic, Goran M., Samardzic, Natasa M., Randjelovic, Danijela V.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 3.25 MB

english, 2013

21

Physics-Based SPICE-Compatible Compact Model for Simulating Hybrid MTJ/CMOS Circuits

Panagopoulos, Georgios D., Augustine, Charles, Roy, Kaushik

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.22 MB

english, 2013

22

Electric Current-Induced Mass Flow in Very Thin Infinite Metallic Films

Talukder, Santanu, Kumar, Praveen, Pratap, Rudra

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

23

Novel Low-Resistance Current Path UMOS With High-K Dielectric Pillars

Luo, Xiao Rong, Cai, Jin Yong, Fan, Ye, Fan, Yuan Hang, Wang, Xiao Wei, Wei, Jie, Jang, Yong Heng, Zhou, Kun, Yin, Chao, Zhang, Bo, Li, Zhao Ji, Hu, GangYi

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.15 MB

english, 2013

24

Vertical Nanowire CMOS Parasitic Modeling and its Performance Analysis

Maheshwaram, Satish, Manhas, S. K., Kaushal, Gaurav, Anand, Bulusu, Singh, Navab

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.61 MB

english, 2013

25

Ab initio Study of Metal Grain Orientation-Dependent Work Function and its Impact on FinFET Variability

Agarwal, Samarth, Pandey, Rajan Kumar, Johnson, Jeffrey B., Dixit, Abhisek, Bajaj, Mohit, Furkay, Stephen S., Oldiges, Phil J., Murali, K. V. R. M.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.72 MB

english, 2013

26

Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs—Part II: Comparative Analysis and Trap-Induced Variability

Esseni, David, Pala, Marco G.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.13 MB

english, 2013

27

Quantum Analytical Model for Inversion Charge and Threshold Voltage of Short-Channel Dual-Material Double-Gate SON MOSFET

Naskar, Sourav, Sarkar, Subir Kumar

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 701 KB

english, 2013

28

Low Frequency Noise Analysis for Post-Treatment of Replacement Metal Gate

Lee, Jae Woo, Simoen, Eddy, Veloso, Anabela, Cho, Moon Ju, Arimura, Hiroaki, Boccardi, Guillaume, Ragnarsson, Lars-Ake, Chiarella, Thomas, Horiguchi, Naoto, Thean, Aaron, Groeseneken, Guido

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 543 KB

english, 2013

29

Scaling Limits of Electrostatic Nanorelays

Pawashe, Chytra, Lin, Kevin, Kuhn, Kelin J.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.51 MB

english, 2013

30

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Persson, Karl-Magnus, Berg, Martin, Borg, Mattias B., Wu, Jun, Johansson, Sofia, Svensson, Johannes, Jansson, Kristofer, Lind, Erik, Wernersson, Lars-Erik

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

31

Analytical Threshold Voltage Model of Junctionless Double-Gate MOSFETs With Localized Charges

Woo, Jong-Ho, Choi, Ji-Min, Choi, Yang-Kyu

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 476 KB

english, 2013

32

Quantum Mechanical Study of the Germanium Electron–Hole Bilayer Tunnel FET

Alper, Cem, Lattanzio, Livio, De Michielis, Luca, Palestri, Pierpaolo, Selmi, Luca, Ionescu, Adrian Mihai

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 2.86 MB

english, 2013

33

A Unified Physical-Based Model of Series Resistance of Polycrystalline Silicon Thin-Film Transistors With Explicit Analytical Solutions

Wang, Mingxiang, He, Ronghua, Zhang, Dongli

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.33 MB

english, 2013

34

Oxygen Annealing Effects on Transport and Charging Characteristics of ${\rm Al\hbox{-}Ta}_{2}{\rm O}_{5}/{\rm SiO}_{x}{\rm N}_{y}\hbox{-}{\rm Si}$ Structure

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 700 KB

english, 2013

35

Working 225 V Over-Voltage Protection Cell With Tunable Trigger and Holding Voltages for Latch-Up Immunity

Coyne, Edward John

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.23 MB

english, 2013

36

Low-Frequency Noise Contributions From Channel and Contacts in InAs Nanowire Transistors

Delker, Collin J., Zi, Yunlong, Yang, Chen, Janes, David B.

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 820 KB

english, 2013

37

Two-Dimensional Self-Limiting Wet Oxidation of Silicon Nanowires: Experiments and Modeling

Fan, Jiewen, Huang, Ru, Wang, Runsheng, Xu, Qiumin, Ai, Yujie, Xu, Xiaoyan, Li, Ming, Wang, Yangyuan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

38

Schottky Collector Bipolar Transistor Without Impurity Doped Emitter and Base: Design and Performance

Nadda, Kanika, Kumar, M. Jagadesh

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

39

Micro-TEG Voltage Supplies for Spin Torque Oscillators

Rozgic, Dejan, Markovic, Dejan

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.21 MB

english, 2013

40

[Blank page - back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2013

File:

PDF, 8 KB

2013

41

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 153 KB

english, 2013

42

Modeling and Design Guidelines for ${\rm P}^{+}$ Guard Rings in Lightly Doped CMOS Substrates

Shen, Ming, Mikkelsen, Jan Hvolgaard, Zhang, Ke, Jensen, Ole Kiel, Tian, Tong, Larsen, Torben

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 1.58 MB

english, 2013

43

IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference

Journal:

IEEE Transactions on Electron Devices

Year:

2013

File:

PDF, 488 KB

2013

44

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 105 KB

english, 2013

45

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 154 KB

english, 2013

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