IEEE Transactions on Electron Devices

1

Exo-Electron Emission From MgO Nanopowders on MgO Thin Film of Alternating Current Plasma Display Panels—Part II. Relationship Between Exo-Electron Currents and Statistical Delay

Kim, Joong Kyun, Kim, Yong-Seog, Weber, Larry F.

Journal:

Year:

2017

Language:

english

File:

PDF, 2.14 MB

english, 2017

2

Monocrystalline Diamond for Ions Detection at Low and High Fluxes

Torrisi, Lorenzo, Cutroneo, Mariapompea, Cannavo, Antonino

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.53 MB

english, 2017

3

Gate Driver Based on a-Si:H Thin-Film Transistors With Two-Step-Bootstrapping Structure for High-Resolution and High-Frame-Rate Displays

Lin, Chih-Lung, Chen, Fu-Hsing, Wang, Ming-Xun, Lai, Po-Cheng, Tseng, Chin-Hsien

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.12 MB

english, 2017

4

The Impact of an Ultrathin Y 2 O 3 Layer on GeO 2 Passivation in Ge MOS Gate Stacks

Seo, Yujin, Lee, Tae In, Yoon, Chang Mo, Park, Bo-Eun, Hwang, Wan Sik, Kim, Hyungjun, Yu, Hyun-Yong, Cho, Byung Jin

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.66 MB

english, 2017

5

Analysis of Short-Channel Effects in Junctionless DG MOSFETs

Xie, Qian, Wang, Zheng, Taur, Yuan

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.16 MB

english, 2017

6

Correction to “Boron Nitride and Sapphire Windows for 95-GHz Gaussian RF Beam” [Aug 16 3257-3261]

Kesari, Vishal, Singh, Arun Kumar, Seshadri, Rengaswamy, Kamath, Sudhir

Journal:

IEEE Transactions on Electron Devices

Year:

2017

File:

PDF, 109 KB

2017

7

Localized Tunneling Phenomena of Nanometer Scaled High- ${K}$ Gate-Stack

Lin, Po-Jui Jerry, Lee, Che-An Andy, Yao, Chih-Wei Kira, Lin, Hsin-Jyun Vincent, Watanabe, Hiroshi

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.38 MB

english, 2017

8

Optimized Dynamic $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ With p-Type Buried Layer Bridge in 700-V Triple RESURF nLDMOS

Mao, Kun, Nie, Hai, Chen, Zhu, Yao, Yao, Du, Jiang

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.61 MB

english, 2017

9

Büttiker Probe-Based Modeling of TDDB: Application to Dielectric Breakdown in MTJs and MOS Devices

Reza, Ahmed Kamal, Hassan, Mohammad Khaled, Roy, Kaushik

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.25 MB

english, 2017

10

Fast Control of Haze Value Using Electrically Switchable Diffraction in a Fringe-Field Switching Liquid Crystal Device

Choi, Tae-Hoon, Woo, Jae-Hyeon, Baek, Jong-Min, Choi, Yeongyu, Yoon, Tae-Hoon

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.27 MB

english, 2017

11