Volume 65; Issue 3

IEEE Transactions on Electron Devices

Volume 65; Issue 3

1

Enhancement of the Multipactor Threshold Inside Nonrectangular Iris

Semenov, Vladimir E., Rakova, Elena I., Sorolla, Eden, Gonzalez-Iglesias, Daniel, Monerris, Oscar, Gimeno, Benito, Puech, Jerome, Sombrin, Jacques B.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.86 MB

english, 2018

2

Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization

Lal, Shalini, Lu, Jing, Thibeault, Brian J., Wong, Man Hoi, DenBaars, Steven P., Mishra, Umesh K.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.39 MB

english, 2018

3

Interfacial Engineering in TiO 2 /Nano-Si Heterostructure-Based Device Prototype for E-Nose Application

Dwivedi, Priyanka, Dhanekar, Saakshi, Agrawal, Monika, Das, Samaresh

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.63 MB

english, 2018

4

7th World Conference on Pholtovoltaic Energy Conversion

Journal:

IEEE Transactions on Electron Devices

Year:

2018

File:

PDF, 1.34 MB

2018

5

Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires

Hao, Qing, Zhao, Hongbo, Xiao, Yue, Wang, Quan, Wang, Xiaoliang

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.59 MB

english, 2018

6

Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III–V Templates

Shim, Jae-Phil, Kim, Han-Sung, Ju, Gunwu, Lim, Hyeong-Rak, Kim, Seong Kwang, Han, Jae-Hoon, Kim, Hyung-Jun, Kim, Sang-Hyeon

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.04 MB

english, 2018

7

Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition

Dasgupta, Avirup, Rastogi, Priyank, Agarwal, Amit, Hu, Chenming, Chauhan, Yogesh Singh

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.58 MB

english, 2018

8

High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin ${\text {AlO}}_{{X}}$ Interfacial Layer

Xu, Meili, Guo, Shuxu, Xiang, Lanyi, Xu, Ting, Xie, Wenfa, Wang, Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.54 MB

english, 2018

9

Doping Dependent Assessment of Accumulation Mode and Junctionless FET for 1T DRAM

Ansari, Md. Hasan Raza, Navlakha, Nupur, Lin, Jyi-Tsong, Kranti, Abhinav

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.65 MB

english, 2018

10

Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Sensitivity in Presence of Parasitic Capacitance

Agarwal, Harshit, Kushwaha, Pragya, Duarte, Juan Pablo, Lin, Yen-Kai, Sachid, Angada B., Chang, Huan-Lin, Salahuddin, Sayeef, Hu, Chenming

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.43 MB

english, 2018

11

Reliability Issues of In 2 O 5 Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature

Kumar, Ajay, Tripathi, M. M., Chaujar, Rishu

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.75 MB

english, 2018

12

Compact Model for Low Effective Mass Channel Common Double-Gate MOSFET

Chakraborty, Ananda Sankar, Mahapatra, Santanu

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.77 MB

english, 2018

13

Analysis, Design, and 3-D Simulation of a High-Efficiency Overmoded Nonuniform Relativistic Backward-Wave Oscillator

Ansari, M. A., Thottappan, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.51 MB

english, 2018

14

A New Holistic Model of 2-D Semiconductor FETs

Marin, Enrique G., Bader, Samuel James, Jena, Debdeep

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.54 MB

english, 2018

15

Design of Power-Rail ESD Clamp With Dynamic Timing-Voltage Detection Against False Trigger During Fast Power-ON Events

Chen, Jie-Ting, Ker, Ming-Dou

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.04 MB

english, 2018

16

Influence of Pixel Design on Charge Transfer Performances in CMOS Image Sensors

Rizzolo, Serena, Goiffon, Vincent, Estribeau, Magali, Marcelot, Olivier, Martin-Gonthier, Philippe, Magnan, Pierre

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.47 MB

english, 2018

17

Li, Jing, Zhou, Jiuren, Han, Genquan, Liu, Yan, Peng, Yue, Zhang, Jincheng, Sun, Qing-Qing, Zhang, David Wei, Hao, Yue

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.13 MB

english, 2018

18

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou, Eleni, Morgan, Katrina, de Groot, C. H. Kees

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.56 MB

english, 2018

19

The Calculation of Negative Bias Illumination Stress-Induced Instability of Amorphous InGaZnO Thin-Film Transistors for Instability-Aware Design

Jang, Jun Tae, Choi, Sung-Jin, Kim, Dong Myong, Kim, Dae Hwan

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.58 MB

english, 2018

20

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor Devices

Journal:

IEEE Transactions on Electron Devices

Year:

2018

File:

PDF, 474 KB

2018

21

Call for papers for a Special Issue of IEEE Transactions on Electron Devices on Compact Modeling for Circuit Design

Journal:

IEEE Transactions on Electron Devices

Year:

2018

File:

PDF, 1.83 MB

2018

22

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 57 KB

english, 2018

23

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 211 KB

english, 2018

24

Analysis of ESD Behavior of Stacked nMOSFET RF Switches in Bulk Technology

Rigato, Matteo, Fleury, Clement, Schwarz, Benedikt, Mergens, Markus, Bychikhin, Sergey, Simburger, Werner, Pogany, Dionyz

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.69 MB

english, 2018

25

Germanane MOSFET for Subdeca Nanometer High-Performance Technology Nodes

Brahma, Madhuchhanda, Bescond, Marc, Logoteta, Demetrio, Ghosh, Ram krishna, Mahapatra, Santanu

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.06 MB

english, 2018

26

A Paradigm for Integrated Circuits Based on the MSET Transistor

Peled, Assaf, Amrani, Ofer, Rosenwaks, Yossi, Vaknin, Yhonatan

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.45 MB

english, 2018

27

Design of a Cascade Backward-Wave Oscillator Based on Metamaterial Slow-Wave Structure

Wu, Gangxiong, Li, Qian, Lei, Xia, Ding, Chong, Jiang, Xuebing, Fang, Shuangzhu, Yang, Ruichao, Wang, Fei, Yue, Lingna, Gong, Yubin, Wei, Yanyu

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.08 MB

english, 2018

28

Back-Gate Modulation in UTB GeOI pMOSFETs With Advanced Substrate Fabrication Technique

Zheng, Zejie, Yu, Xiao, Zhang, Yanyan, Xie, Min, Cheng, Ran, Zhao, Yi

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.05 MB

english, 2018

29

3-D LER and RDF Matching Performance of Nanowire FETs in Inversion, Accumulation, and Junctionless Modes

Bansal, Anil K., Gupta, Charu, Gupta, Anshul, Singh, Ramendra, Hook, Terence B., Dixit, Abhisek

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.55 MB

english, 2018

30

A Model for Gate-Underlap-Dependent Short- Channel Effects in Junctionless MOSFET

Jaiswal, Nivedita, Kranti, Abhinav

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.75 MB

english, 2018

31

Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors With Enhanced Performance

Wan, Da, Liu, Xingqiang, Abliz, Ablat, Liu, Chuansheng, Yang, Yanbing, Wu, Wei, Li, Guoli, Li, Jinchai, Chen, Huipeng, Guo, Tailiang, Liao, Lei

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 982 KB

english, 2018

32

Write-Once-Read-Many-Times Characteristic of InZnO Oxide Semiconductor

Hsu, Chih-Chieh, Tsao, Che-Chang, Lin, Yu-Sheng

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.03 MB

english, 2018

33

Analysis of the Transistor Tetrode-Based Determination of the Base Resistance Components of Bipolar Transistors—A Review

Schroter, Michael, Pawlak, Andreas

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.18 MB

english, 2018

34

Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO 2 RRAM and Their Impacts on RTN Amplitude Distribution

Ma, Jigang, Chai, Zheng, Zhang, Wei Dong, Zhang, Jian Fu, Ji, Zhigang, Benbakhti, Brahim, Govoreanu, Bogdan, Simoen, Eddy, Goux, Ludovic, Belmonte, Attilio, Degraeve, Robin, Kar, Gouri Sankar, Jurczak

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 3.14 MB

english, 2018

35

Modeling of Breakdown Voltage for SOI Trench LDMOS Device Based on Conformal Mapping

Wang, Yanan, Wang, Zhigang, Bai, Tianrui, Kuo, James B.

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.06 MB

english, 2018

36

A Postalignment Method for High-Mobility Organic Thin-Film Transistors

Zhang, Guocheng, Zhang, Pingjun, Hu, Daobing, Chen, Huipeng, Guo, Tailiang

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.75 MB

english, 2018

37

Driving Method of Three-Particle Electrophoretic Displays

Kao, Wen-Chung, Tsai, Jui-Che

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.43 MB

english, 2018

38

Physics-Based Breakdown Voltage Optimization of Trench MOS Barrier Schottky Rectifiers

Latorre-Rey, Alvaro D., Mudholkar, Mihir, Quddus, Mohammed Tanvir

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.08 MB

english, 2018

39

An Experimental Study on LT-GaAs Photoconductive Antenna Breakdown Mechanism

Ma, Cheng, Yang, Lei, Dong, Chengang, Wang, Shaoqiang, Shi, Wei, Cao, Juncheng

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 1.82 MB

english, 2018

40

Blank page

Journal:

IEEE Transactions on Electron Devices

Year:

2018

File:

PDF, 3 KB

2018

41

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 131 KB

english, 2018

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