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51

Diffusion of impurities in undercooled melt of pulse heated ion-implanted silicon

A. V. Dvurechenskii, R. Grötzschel, N. M. Igonina, B. A. Koval, N. I. Lebbdeva

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 470 KB

english, 1984

52

Defect Structure Study with Planar Channeling in Pulse-Annealed Ion-Implanted Silicon

A. V. Dvurechenskii, B. P. Kashnikov, G. P. Pokhil, V. P. Popov, A. V. Tulinov, A. A. Turinge

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 208 KB

english, 1984

53

New EPR defects in Si〈Al〉

A. V. Dvurechenskii, B. P. Kashnikov, V. V. Suprunchik

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 330 KB

english, 1984

54

Low symmetry centre in silicon

A. V. Dvurechenskii, V. V. Suprunchik

Journal:

physica status solidi (a)

Year:

1985

Language:

english

File:

PDF, 172 KB

english, 1985

55

Intermediate and Self-Sustaining Crystallization of a-Si Layers During Pulsed Electron Beam Annealing

V. Yu. Balandin, A. V. Dvurechenskii, L. N. Aleksandrov

Journal:

physica status solidi (a)

Year:

1986

Language:

english

File:

PDF, 172 KB

english, 1986

56

Defects in supersaturated solid solution of arsenic in silicon at rapid thermal annealing

V. P. Popov, A. V. Dvurechenskii, B. P. Kashnikov, A. I. Popov

Journal:

physica status solidi (a)

Year:

1986

Language:

english

File:

PDF, 293 KB

english, 1986

57

Transport phenomena in amorphous silicon doped by ion implantation of 3d metals

A. V. Dvurechenskii, V. A. Dravin, I. A. Ryazantsev, A. Kh. Antonenko, I. G. Landochkin

Journal:

physica status solidi (a)

Year:

1986

Language:

english

File:

PDF, 393 KB

english, 1986

58

Divacancy-Type Defect with Low Symmetry in Silicon

A. V. Dvurechenskii, V. V. Supruchik, L. S. Smirnov

Journal:

physica status solidi (a)

Year:

1986

Language:

english

File:

PDF, 284 KB

english, 1986

59

Melting of multilayered structures under pulse heating (computational experiment)

L. N. Aleksandrov, V. Yu. Balandin, V. Dvurechenskii, O. A. Kulyasova

Journal:

physica status solidi (a)

Year:

1988

Language:

english

File:

PDF, 156 KB

english, 1988

60

The EPR Study of Inhomogeneous Deformations in Neutron-Irradiated Silicon

A. A. Karanovich, A. V. Dvurechenskii

Journal:

physica status solidi (a)

Year:

1989

Language:

english

File:

PDF, 426 KB

english, 1989

61

Electrical properties of ion-doped amorphous silicon

A. V. Dvurechenskii, V. A. Dravin, A. I. Yakimov

Journal:

physica status solidi (a)

Year:

1989

Language:

english

File:

PDF, 495 KB

english, 1989

62

A two-dimensional model of SOI structure crystallization by pulse nanosecond heating

L. N. Aleksandrov, V. Yu. Balandin, A. V. Dvurechenskii, O. A. Kulyasova

Journal:

physica status solidi (a)

Year:

1989

Language:

english

File:

PDF, 185 KB

english, 1989

63

Simulation of temperature and elastic fields and phase transitions in SOI structures formed by pulse heating

V. Yu. Balandin, O. A. Kulyasova, A. V. Dvurechenskii, L. N. Aleksandrov, S. L. Babenkova, Yu. A. Manzhosov

Journal:

physica status solidi (a)

Year:

1991

Language:

english

File:

PDF, 755 KB

english, 1991

64

Thermoelastic stresses in HgxCd1−xTe-SiO2-in structures under heat treatments

L. N. Aleksandrov, V. Yu. Balandin, A. V. Dvurechenskii, O. A. Kulyasova

Journal:

physica status solidi (a)

Year:

1992

Language:

english

File:

PDF, 246 KB

english, 1992

65

Interference effects at laser pulse heating of multilayer structures

V. Yu. Balandin, L. N. Aleksandrov, A. V. Dvurechenskii, O. A. Kulyasova

Journal:

physica status solidi (a)

Year:

1994

Language:

english

File:

PDF, 419 KB

english, 1994

66

Non-equilibrium transport in arrays of type-II Ge/Si quantum dots

N.P. Stepina, A.I. Yakimov, A.V. Dvurechenskii, A.V. Nenashev, A.I. Nikiforov

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 349 KB

english, 2004

67

Two-dimensional phononless VRH conduction in arrays of Ge/Si quantum dots

A. I. Yakimov, A. V. Dvurechenskii, A. V. Nenashev, A. I. Nikiforov, A. A. Bloshkin, M. N. Timonova

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 139 KB

english, 2004

68

Hopping photoconductivity and its long-time relaxation in two-dimensional array of Ge/Si quantum dots

N. P. Stepina, A. I. Yakimov, A.V. Nenashev, A. V. Dvurechenskii, A. V. Peregoedov, A. I. Nikiforov

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 481 KB

english, 2005

69

Hopping magnetoresistance in two-dimensional arrays of Ge/Si quantum dots

A. I. Yakimov, A. V. Dvurechenskii, G. M. Minkov, A. A. Sherstobitov, A. I. Nikiforov, A. A. Bloshkin, N. P. Stepina, J. P. Leitão, N. A. Sobolev, L. Pereira, M. C. do Carmo

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 152 KB

english, 2006

70

Localization of electrons in type-II Ge/Si quantum dots stacked in a multilayer structure

A. I. Yakimov, A. I. Nikiforov, A. V. Dvurechenskii, A. A. Bloshkin

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 191 KB

english, 2007

71

Effect of screening on slow relaxation of excess conductance in two-dimensional array of tunnel-coupled quantum dots

N. P. Stepina, E. C. Koptev, A. V. Nenashev, A. V. Dvurechenskii, A. I. Nikiforov

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 1.51 MB

english, 2008

72

Asymmetry effect on the spin relaxation in quantum dot structures

A. F. Zinovieva, A. V. Dvurechenskii, N. P. Stepina, A. S. Deryabin, A. I. Nikiforov, R. M. Rubinger, N. A. Sobolev, J. P. Leitão, M. C. Carmo

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 194 KB

english, 2009

73

Using scrap with a high slagging capacity

V. I. Mesyats, I. S. Dvurechenskii, V. A. Alyavdin, E. V. Sukhanov, N. I. Panova

Journal:

Year:

1981

Language:

english

File:

PDF, 241 KB

english, 1981

74

Possible mechanism of disturbance of the “synaptic” properties of the atrioventricular node in some types of heart pathology

V. A. Frolov, A. A. Abinder, T. A. Kazanskaya, E. I. Dvurechenskii, A. M. Ovsyannikov

Journal:

Bulletin of Experimental Biology and Medicine

Year:

1967

Language:

english

File:

PDF, 270 KB

english, 1967

75

Measurement of emissivity of partially transparent materials at high temperatures by high-speed spectrometry method

A. V. Dvurechenskii, V. A. Petrov, V. Yu. Reznik

Journal:

Measurement Techniques

Year:

1977

Language:

english

File:

PDF, 323 KB

english, 1977

76

Effects of electron detachment from negative ions on the current-flow mechanism in a medium-pressure glow discharge

V. V. Breev, S. V. Dvurechenskii, S. V. Pashkin

Journal:

Journal of Applied Mechanics and Technical Physics

Year:

1983

Language:

english

File:

PDF, 414 KB

english, 1983

77

Method for calculating gas discharge chamber characteristics with consideration of the boundary layer

V. V. Breev, S. V. Dvurechenskii, A. T. Kukharenko, S. V. Pashkin

Journal:

Journal of Applied Mechanics and Technical Physics

Year:

1988

Language:

english

File:

PDF, 397 KB

english, 1988

78

Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications

O. P. Pchelyakov, A. V. Dvurechenskii, A. I. Nikiforov, A. V. Voitsekhovskii, D. V. Grigor’ev, A. P. Kokhanenko

Journal:

Russian Physics Journal

Year:

2011

Language:

english

File:

PDF, 400 KB

english, 2011

79

Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substrates

P. Novikov, J. Smagina, D. Vlasov, A. Deryabin, A. Kozhukhov, A. Dvurechenskii

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 657 KB

english, 2011

80

Depth distribution of point defects in Si bombarded by high-energy N5+and Si5+ions

A. V. Dvurechenskii, A. A. Karanovich, R. Grötzschel, F. Herrmann, R. Kegler, A. V. Rybin

Journal:

Physics of the Solid State

Year:

1998

Language:

english

File:

PDF, 98 KB

english, 1998

81

Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam

A. V. Dvurechenskii, V. A. Zinovyev, V. A. Kudryavtsev, Zh. V. Smagina

Journal:

Year:

2000

Language:

english

File:

PDF, 55 KB

english, 2000

82

Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type

A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, O. P. Pchelyakov

Journal:

Year:

2000

Language:

english

File:

PDF, 68 KB

english, 2000

83

Spatial distribution of elastic deformations in Ge/Si structures with quantum dots

A. V. Nenashev, A. V. Dvurechenskii

Journal:

Journal of Experimental and Theoretical Physics

Year:

2000

Language:

english

File:

PDF, 160 KB

english, 2000

84

Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, B. Voigtländer

Journal:

Year:

2000

Language:

english

File:

PDF, 436 KB

english, 2000

85

Contribution of the electron-electron interaction to the optical properties of dense arrays of Ge/Si quantum dots

A. I. Yakimov, A. V. Dvurechenskii, N. P. Stepina, A. I. Nikiforov, A. V. Nenashev

Journal:

Journal of Experimental and Theoretical Physics

Year:

2001

Language:

english

File:

PDF, 182 KB

english, 2001

86

Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots

A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov

Journal:

Year:

2001

Language:

english

File:

PDF, 64 KB

english, 2001

87

Type-II Ge/Si quantum dots

A. V. Dvurechenskii, A. I. Yakimov

Journal:

Year:

2001

Language:

english

File:

PDF, 137 KB

english, 2001

88

Self-organization of an ensemble of Ge nanoclusters upon pulsed irradiation with low-energy ions during heteroepitaxy on Si

A. V. Dvurechenskii, V. A. Zinov’ev, Zh. V. Smagina

Journal:

Year:

2001

Language:

english

File:

PDF, 121 KB

english, 2001

89

Barrier height and tunneling current in Schottky diodes with embedded layers of quantum dots

A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii

Journal:

Year:

2002

Language:

english

File:

PDF, 88 KB

english, 2002

90

Zeeman effect for holes in a Ge/Si system with quantum dots

A. V. Nenashev, A. V. Dvurechenskii, A. F. Zinov’eva

Journal:

Journal of Experimental and Theoretical Physics

Year:

2003

Language:

english

File:

PDF, 187 KB

english, 2003

91

Phononless hopping conduction in two-dimensional layers of quantum dots

A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, A. A. Bloshkin

Journal:

Year:

2003

Language:

english

File:

PDF, 84 KB

english, 2003

92

Many-electron Coulomb correlations in hopping transport along layers of quantum dots

A. I. Yakimov, A. V. Nenashev, A. V. Dvurechenskii, M. N. Timonova

Journal:

Year:

2003

Language:

english

File:

PDF, 75 KB

english, 2003

93

Ge/Si photodiodes with embedded arrays of Ge quantum dots forthe near infrared (1.3–1.5 µm) region

A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, S. V. Chaikovskii, S. A. Tiis

Journal:

Year:

2003

Language:

english

File:

PDF, 186 KB

english, 2003

94

Pulsed-laser modification of germanium nanoclusters in silicon

V. A. Volodin, E. I. Gatskevich, A. V. Dvurechenskii, M. D. Efremov, G. D. Ivlev, A. I. Nikiforov, D. A. Orekhov, A. I. Yakimov

Journal:

Year:

2003

Language:

english

File:

PDF, 80 KB

english, 2003

95

Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis

L. V. Sokolov, A. S. Deryabin, A. I. Yakimov, O. P. Pchelyakov, A. V. Dvurechenskii

Journal:

Physics of the Solid State

Year:

2004

Language:

english

File:

PDF, 203 KB

english, 2004

96

Hopping photoconduction and its long-time kinetics in a heterosystem with Ge quantum dots in Si

N. P. Stepina, A. I. Yakimov, A. V. Nenashev, A. V. Dvurechenskii, A. I. Nikiforov

Journal:

Year:

2003

Language:

english

File:

PDF, 69 KB

english, 2003

97

Ge/Si quantum dots in external electric and magnetic fields

A. V. Dvurechenskii, A. I. Yakimov, A. V. Nenashev, A. F. Zinov’eva

Journal:

Physics of the Solid State

Year:

2004

Language:

english

File:

PDF, 57 KB

english, 2004

98

Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

A. V. Dvurechenskii, Zh. V. Smagina, V. A. Zinov’ev, V. A. Armbrister, V. A. Volodin, M. D. Efremov

Journal:

Year:

2004

Language:

english

File:

PDF, 120 KB

english, 2004

99

Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines

A. I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, N. P. Stepina, A. I. Nikiforov, V. V. Ul’yanov, S. V. Chaikovskii, V. A. Volodin, M. D. Efremov, M. S. Seksenbaev, T. S. Shamirzaev, K. S. Zhuravlev

Journal:

Year:

2004

Language:

english

File:

PDF, 72 KB

english, 2004

100

The Meyer-Neldel rule in the processes of thermal emission and hole capture in Ge/Si quantum dots

A. I. Yakimov, A. V. Dvurechenskii, A. I. Nikiforov, G. Yu. Mikhalev

Journal:

Year:

2004

Language:

english

File:

PDF, 86 KB

english, 2004

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