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1

Structural Compromise between High Hardness and Crack Resistance in Aluminoborate Glasses

Frederiksen, Kristine F., Januchta, Kacper, Mascaraque, Nerea, Youngman, Randall E., Bauchy, Mathieu, Rzoska, Sylwester J., Bockowski, Michal, Smedskjaer, Morten M.

Journal:

Journal of Physical Chemistry B

Year:

2018

Language:

english

File:

PDF, 583 KB

english, 2018

2

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N 2 partial pressure annealing: Transmission electron microscopy analysis

Iwata, Kenji, Sakurai, Hideki, Arai, Shigeo, Nakashima, Takuya, Narita, Tetsuo, Kataoka, Keita, Bockowski, Michal, Nagao, Masaharu, Suda, Jun, Kachi, Tetsu, Ikarashi, Nobuyuki

Journal:

Journal of Applied Physics

Year:

2020

Language:

english

File:

PDF, 2.73 MB

english, 2020

3

[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Impacts of high temperature annealing above 1400 Â° C under N 2 overpressure to activate acceptors in Mg-implanted GaN

Sakurai, Hideki, Narita, Tetsuo, Hirukawa, Kazufumi, Yamada, Shinji, Koura, Akihiko, Kataoka, Keita, Horita, Masahiro, Ikarashi, Nobuyuki, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

Year:

2020

File:

PDF, 2.10 MB

2020

4

Structural Densification of Lithium Phosphoaluminoborate Glasses

Liu, Pengfei, SÃ¸ndergaard, Andreas L.S., Youngman, Randall E., Rzoska, Sylwester J., Bockowski, Michal, Jensen, Lars R., Smedskjaer, Morten M.

Journal:

Journal of the American Ceramic Society

Year:

2020

File:

PDF, 28.62 MB

2020

5

Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

Zuzanna Liliental-Weber, C. Kisielowski, S. Ruvimov, Y. Chen, J. Washburn, I. Grzegory, M. Bockowski, J. Jun, S. Porowski

Journal:

Journal of Electronic Materials

Year:

1996

Language:

english

File:

PDF, 2.08 MB

english, 1996

6

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

I. Grzegory, M. Boćkowski, B. łucznik, J. Weyher, E. Litwin-Staszewska, L. Konczewicz, B. Sadovyi, P. Nowakowski, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.26 MB

english, 2012

7

Homoepitaxial growth of GaN using molecular beam epitaxy

Gassmann, A., Suski, T., Newman, N., Kisielowski, C., Jones, E., Weber, E. R., Liliental‐Weber, Z., Rubin, M. D., Helava, H. I., Grzegory, I., Bockowski, M., Jun, J., Porowski, S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 419 KB

english, 1996

8

Lattice parameters of gallium nitride

Leszczynski, M., Teisseyre, H., Suski, T., Grzegory, I., Bockowski, M., Jun, J., Porowski, S., Pakula, K., Baranowski, J. M., Foxon, C. T., Cheng, T. S.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 357 KB

english, 1996

9

Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask

Amilusik, M., Sochacki, T., Łucznik, B., Boćkowski, M., Sadovyi, B., Presz, A., Dzięcielewski, I., Grzegory, I.

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 7.66 MB

english, 2013

10

Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

Teisseyre, Henryk, Domagala, Jaroslaw Zbigniew, Lucznik, Boleslaw, Reszka, Anna, Kowalski, Bogdan Jerzy, Bockowski, Michal, Kamler, Grzegorz, Grzegory, Izabella

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 3.48 MB

english, 2012

11

High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress

Paskova, T., Suski, T., Bockowski, M., Paskov, P.P., Darakchieva, V., Monemar, B., Tuomisto, F., Saarinen, K., Ashkenov, N., Schubert, M., Roder, C., Hommel, D.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 267 KB

english, 2004

12

Temperature-Dependent Densification of Sodium Borosilicate Glass

M. B. Østergaard, R. Yougman, M. N. Svenson, S. J. Rzoska, M. Bockowski, L. Rosgaard Jensen, M. M. Smedskjaer

Year:

2015

Language:

english

File:

PDF, 982 KB

english, 2015

13

Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

Faye, D. Nd., Fialho, M., Magalhães, S., Alves, E., Ben Sedrine, N., Rodrigues, J., Correia, M.R., Monteiro, T., Boćkowski, M., Hoffmann, V., Weyers, M., Lorenz, K.

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2016

Language:

english

File:

PDF, 1.23 MB

english, 2016

14

Structure and mechanical properties of compressed sodium aluminosilicate glasses: Role of non-bridging oxygens

Bechgaard, Tobias K., Goel, Ashutosh, Youngman, Randall E., Mauro, John C., Rzoska, Sylwester J., Bockowski, Michal, Jensen, Lars R., Smedskjaer, Morten M.

Journal:

Journal of Non-Crystalline Solids

Year:

2016

Language:

english

File:

PDF, 1.75 MB

english, 2016

15

Structural Defects in Heteroepitaxial and Homoepitaxial GaN

Liliental-Weber, Zuzanna, Ruvimov, S., Kisielowski, CH., Chen, Y., Swider, W., Washburn, J., Newman, N., Gassmann, A., Liu, X., Schloss, L., Weber, E.R., Grzegory, I., Bockowski, M., Jun, J., Suski, T

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 7.68 MB

english, 1995

16

HVPE GaN wafers with improved crystalline and electrical properties

Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Sochacki, T., Iwinska, M., Bockowski, M.S.

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 1.54 MB

english, 2016

17

Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

Zajac, M., Kucharski, R., Grabianska, K., Gwardys-Bak, A., Puchalski, A., Wasik, D., Litwin-Staszewska, E., Piotrzkowski, R., Z Domagala, J., Bockowski, M.

Journal:

Progress in Crystal Growth and Characterization of Materials

Year:

2018

Language:

english

File:

PDF, 3.05 MB

english, 2018

18

Homoepitaxial HVPE GaN: A potential substrates for high performance devices

Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Tadjer, M.J., Wu, S., Raghothamachar, B., Dudley, M., Sochacki, T., Bockowski, M.

Journal:

Journal of Crystal Growth

Year:

2018

Language:

english

File:

PDF, 1.22 MB

english, 2018

19

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

Rounds, Robert, Sarkar, Biplab, Sochacki, Tomasz, Bockowski, Michal, Imanishi, Masayuki, Mori, Yusuke, Kirste, Ronny, Collazo, Ramón, Sitar, Zlatko

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 724 KB

english, 2018

20

Micro-Raman studies of strain in bulk GaN crystals grown by hydride vapor phase epitaxy on ammonothermal GaN seeds

Amilusik, M., Wlodarczyk, D., Suchocki, A., Bockowski, M.

Journal:

Japanese Journal of Applied Physics

Year:

2019

File:

PDF, 1.35 MB

2019

21

Investigation of diffusion mechanism of beryllium in GaN

Jakiela, Rafal, Sierakowski, Kacper, Sochacki, Tomasz, Iwinska, MaÅgorzata, Fijalkowski, Michal, Barcz, Adam, Bockowski, Michal

Journal:

Physica B: Condensed Matter

Year:

2020

File:

PDF, 1001 KB

2020

22

High Pressure Processing of Ion Implanted GaN

Sierakowski, Kacper, Jakiela, Rafal, Lucznik, Boleslaw, Kwiatkowski, Pawel, Iwinska, Malgorzata, Turek, Marcin, Sakurai, Hideki, Kachi, Tetsu, Bockowski, Michal

Journal:

Year:

2020

File:

PDF, 27.30 MB

2020

23

Progress on and challenges of p-type formation for GaN power devices

Narita, Tetsuo, Yoshida, Hikaru, Tomita, Kazuyoshi, Kataoka, Keita, Sakurai, Hideki, Horita, Masahiro, Bockowski, Michal, Ikarashi, Nobuyuki, Suda, Jun, Kachi, Tetsu, Tokuda, Yutaka

Journal:

Journal of Applied Physics

Year:

2020

File:

PDF, 3.02 MB

2020

24

Doping of Homoepitaxial GaN Layers

P. Prystawko, M. Leszczynski, B. Beaumont, P. Gibart, E. Frayssinet, W. Knap, P. Wisniewski, M. Bockowski, T. Suski, S. Porowski

Journal:

physica status solidi (b)

Year:

1998

Language:

english

File:

PDF, 161 KB

english, 1998

25

Micro Defects in Nearly Dislocation Free GaN Doped with Mg during High Pressure Crystallization

I. Grzegory, J.A. Kozubowski, J. Borysiuk, J.L. Weyher, M. Boćkowski, B. Łucznik, S. Porowski

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 196 KB

english, 1999

26

(GaMg)N — New Wide Band Gap Semiconductor

T. Suski, P. Perlin, A. Pietraszko, M. Leszczyński, M. Boćkowski, I. Grzegory, S. Porowski

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 166 KB

english, 1999

27

Blue-Laser Structures Grown on Bulk GaN Crystals

P. Prystawko, R. Czernecki, M. Leszczynski, P. Perlin, P. Wisniewski, L. Dmowski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, G. Nowak, S. Porowski

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 126 KB

english, 2002

28

Growth and Doping of GaN and AlN Single Crystals under High Nitrogen Pressure

Journal:

Crystal Research and Technology

Year:

2001

Language:

english

File:

PDF, 303 KB

english, 2001

29

ChemInform Abstract: Growth and Doping of GaN and AlN Single Crystals under High Nitrogen Pressure

Journal:

Year:

2001

File:

PDF, 24 KB

2001

30

Bulk growth of gallium nitride: challenges and difficulties

Journal:

Crystal Research and Technology

Year:

2007

Language:

english

File:

PDF, 537 KB

english, 2007

31

Modelling the growth of nitrides in ammonia-rich environment

S. Krukowski, P. Kempisty, P. Strąk, G. Nowak, R. Czernecki, M. Leszczynski, T. Suski, M. Bockowski, I. Grzegory

Journal:

Crystal Research and Technology

Year:

2007

Language:

english

File:

PDF, 260 KB

english, 2007

32

Polarity identification of GaN bulk single crystals (0001) surface by Auger electron spectroscopy

Dr. Alicja Iller, Dr. Jerzy Marks, Dr. Izabela Grzegory, Dr. Elżbieta Litwin-Staszewska, Dr. Michal Boćkowski

Journal:

Crystal Research and Technology

Year:

1997

Language:

english

File:

PDF, 316 KB

english, 1997

33

X-ray examination of GaN single crystals grown at high hydrostatic pressure

M. Leszcynski, I. Grzegory, M. Bockowski

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 277 KB

english, 1993

34

III–V Nitrides—thermodynamics and crystal growth at high N2 pressure

I. Grzegory, J. Jun, M. Boćkowski, ST. Krukowski, M. Wróblewski, B. Łucznik, S. Porowski

Journal:

Journal of Physics and Chemistry of Solids

Year:

1995

Language:

english

File:

PDF, 805 KB

english, 1995

35

High pressure phase transition in aluminium nitride

I. Gorczyca, N.E. Christensen, P. Perlin, I. Grzegory, J. Jun, M. Bockowski

Journal:

Solid State Communications

Year:

1991

Language:

english

File:

PDF, 173 KB

english, 1991

36

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

K. Pakuła, A. Wysmołek, K.P. Korona, J.M. Baranowski, R. Stępniewski, I. Grzegory, M. Boćkowski, J. Jun, S. Krukowski, M. Wróblewski, S. Porowski

Journal:

Solid State Communications

Year:

1996

Language:

english

File:

PDF, 379 KB

english, 1996

37

Phase diagram determination of II-VI semiconductors

J.C. Tedenac, J. Jun, S. Krukowski, M. Bockowski, S. Porowski, M.C. Record, R.M. Ayral-Marin, G. Brun

Journal:

Thermochimica Acta

Year:

1994

Language:

english

File:

PDF, 638 KB

english, 1994

38

Device advantage of the dislocation-free pressure grown GaN substrates

M. Boćkowski, S. Porowski

Journal:

Materials Science in Semiconductor Processing

Year:

2003

Language:

english

File:

PDF, 241 KB

english, 2003

39

High temperature annealing of Europium implanted AlN

K. Lorenz, S. Magalhães, E. Alves, M. Peres, T. Monteiro, A.J. Neves, M. Boćkowski

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2010

Language:

english

File:

PDF, 756 KB

english, 2010

40

The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN

K.P. O’Donnell, I.S. Roqan, Ke Wang, K. Lorenz, E. Alves, M. Boćkowski

Journal:

Optical Materials

Year:

2011

Language:

english

File:

PDF, 301 KB

english, 2011

41

Crystal growth of III-N compounds under high nitrogen pressure

I. Grzegory, J. Jun, St. Krukowski, M. Boćkowski, S. Porowski

Journal:

Physica B: Condensed Matter

Year:

1993

Language:

english

File:

PDF, 437 KB

english, 1993

42

Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates

M. Boćkowski, I. Grzegory, S. Krukowski, B. Łucznik, M. Wróblewski, G. Kamler, J. Borysiuk, P. Kwiatkowski, K. Jasik, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 526 KB

english, 2004

43

Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures

M. Boćkowski, I. Grzegory, S. Krukowski, B. Łucznik, M. Wróblewski, G. Kamler, J. Borysiuk, P. Kwiatkowski, K. Jasik, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 407 KB

english, 2005

44

Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

A. Feduniewicz, C. Skierbiszewski, M. Siekacz, Z.R. Wasilewski, I. Sproule, S. Grzanka, R. Jakieła, J. Borysiuk, G. Kamler, E. Litwin-Staszewska, R. Czernecki, M. Boćkowski, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 296 KB

english, 2005

45

Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method

M. Boćkowski, I. Grzegory, J. Borysiuk, G. Kamler, B. Łucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 338 KB

english, 2005

46

Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

B. Łucznik, B. Pastuszka, I. Grzegory, M. Boćkowski, G. Kamler, E. Litwin-Staszewska, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 536 KB

english, 2005

47

CFD and reaction computational analysis of the growth of GaN by HVPE method

P. Kempisty, B. Łucznik, B. Pastuszka, I. Grzegory, M. Boćkowski, S. Krukowski, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 1.44 MB

english, 2006

48

Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods

I. Grzegory, B. Łucznik, M. Boćkowski, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 1.15 MB

english, 2007

49

Adsorption and dissolution of nitrogen in lithium—QM DFT investigation

Stanisław Krukowski, Izabella Grzegory, Michał Bockowski, Boleslaw Łucznik, Mirosław Wróblewski, Sylwester Porowski

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 397 KB

english, 2007

50

Platelets and needles: Two habits of pressure-grown GaN crystals

M. Boćkowski, I. Grzegory, G. Kamler, B. Łucznik, S. Krukowski, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Porowski

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 965 KB

english, 2007

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