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51

Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers

Brocero, G., Guhel, Y., Eudeline, P., Sipma, J. P., Gaquiere, C., Boudart, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.09 MB

english, 2019

52

Thermal response and correlation between mobility and kink effect in GaN HEMTs

Alim, Mohammad A., Afrin, S., Rezazadeh, A.A., Gaquiere, C.

Journal:

Microelectronic Engineering

Year:

2020

Language:

english

File:

PDF, 902 KB

english, 2020

53

[IEEE 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) - Cardiff, United Kingdom (2020.7.16-2020.7.17)] 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) - Power Measurement Setup Development for On-Wafer Characterization at 185â191 GHz

Maye, Caroline, Lepilliet, Sylvie, Okada, Etienne, Gloria, Daniel, Ducournau, Guillaume, Gaquiere, Christophe

Year:

2020

File:

PDF, 691 KB

2020

54

Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate

B. Boudart, C. Gaquière, M. Constant, A. Lorriaux, N. Lefebvre

Journal:

Journal of Raman Spectroscopy

Year:

1999

Language:

english

File:

PDF, 93 KB

english, 1999

55

Small- and large-signal measurements of low-temperature GaAs FETs

B. Boudart, C. Gaquière, S. Trassaert, D. Théron, B. Splingart, M. Lipka, E. Kohn

Journal:

Microwave and Optical Technology Letters

Year:

1996

Language:

english

File:

PDF, 303 KB

english, 1996

56

Pulsed bias/pulsed RF characterization measurement system of FET at constant intrinsic voltages

C. Gaquiere, J. P. Lafont, Y. Crosnier

Journal:

Microwave and Optical Technology Letters

Year:

1999

Language:

english

File:

PDF, 132 KB

english, 1999

57

Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs

Y. Guhel, B. Boudart, V. Hoel, M. Werquin, C. Gaquiere, J. C. De Jaeger, M. A. Poisson, I. Daumiller, E. Kohn

Journal:

Microwave and Optical Technology Letters

Year:

2002

Language:

english

File:

PDF, 98 KB

english, 2002

58

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J. C. Pesant, Z. Bougrioua, M. Germain, J. C. De Jaeger, C. Gaquiere

Journal:

Microwave and Optical Technology Letters

Year:

2005

Language:

english

File:

PDF, 226 KB

english, 2005

59

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

M. Werquin, D. Ducatteau, N. Vellas, E. Delos, Y. Cordier, R. Aubry, C. Gaquière

Journal:

Microwave and Optical Technology Letters

Year:

2006

Language:

english

File:

PDF, 82 KB

english, 2006

60

Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

Y. Guhel, B. Boudart, N. Vellas, C. Gaquiere

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 565 KB

english, 2010

61

Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

M. Gassoumi, J.M. Bluet, G. Guillot, C. Gaquière, H. Maaref

Journal:

Materials Science and Engineering: C

Year:

2008

Language:

english

File:

PDF, 624 KB

english, 2008

62

Plasma excitations in field effect transistors for terahertz detection and emission

W. Knap, D. Coquillat, N. Dyakonova, F. Teppe, O. Klimenko, H. Videlier, S. Nadar, J. Łusakowski, G. Valusis, F. Schuster, B. Giffard, T. Skotnicki, C. Gaquière, A. El Fatimy

Journal:

Comptes Rendus Physique

Year:

2010

File:

PDF, 783 KB

2010

63

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

M.-A. di Forte Poisson, M. Magis, M. Tordjman, J. Di Persio, R. Langer, L. Toth, B. Pecz, M. Guziewicz, J. Thorpe, R. Aubry, E. Morvan, N. Sarazin, C. Gaquière, G. Meneghesso, V. Hoel, J.-C. Jacquet,

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 968 KB

english, 2008

64

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

M. Gassoumi, O. Fathallah, C. Gaquiere, H. Maaref

Journal:

Physica B: Condensed Matter

Year:

2010

Language:

english

File:

PDF, 222 KB

english, 2010

65

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

O. Lancry, E. Pichonat, J. Réhault, M. Moreau, R. Aubry, C. Gaquière

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 256 KB

english, 2010

66

AlGaN/GaN HEMTs on Resistive Si(111) Substrate: From Material Assessment to RF Power Performances

Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hoël, A. Minko, N. Vellas, C. Gaquière, J.C. DeJaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J.-C.

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 109 KB

english, 2003

67

Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation

A. El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, W. Knap, J. Lyonnet, Y. M. Meziani, T. Otsuji, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Y. Roelens, Ch. Gaquiere, D. Theron, A.

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 251 KB

english, 2008

68

Nitride based nanotransistors as new sources and detectors of THz radiations

A. El Fatimy, F. Teppe, S. Boubanga, N. Dyakonova, B. Gil, D. Coquillat, D. Seliuta, G. Valušis, M.-A. Poisson, E. Morvan, Ch. Gaquiere, D. Theron, A. Cappy, W. Knap

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 198 KB

english, 2008

69

Terahertz imaging using high electron mobility transistors as plasma wave detectors

S. Nadar, D. Coquillat, M. Sakowicz, H. Videlier, F. Teppe, N. Dyakonova, W. Knap, J.-M. Peiris, J. Lyonnet, D. Seliuta, I. Kasalynas, G. Valušis, K. Madjour, D. Théron, C. Gaquière, M.-A. Poisson

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 483 KB

english, 2009

70

Thermal oxidation of lattice matched InAlN/GaN heterostructures

M. Alomari, A. Chuvilin, L. Toth, B. Pecz, J.-F. Carlin, N. Grandjean, C. Gaquière, M.-A. di Forte-Poisson, S. Delage, E. Kohn

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 347 KB

english, 2010

71

LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices

M.-A. di Forte Poisson, M. Magis, M. Tordjman, R. Aubry, N. Sarazin, M. Peschang, E. Morvan, S.L. Delage, J. di Persio, R. Quéré, B. Grimbert, V. Hoel, E. Delos, D. Ducatteau, C. Gaquiere

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 411 KB

english, 2004

72

Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

J. Kuzmik, S. Bychikhin, R. Lossy, H.-J. Würfl, M.-A. di Forte Poisson, J.-P. Teyssier, C. Gaquière, D. Pogany

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 733 KB

english, 2007

73

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

Gassoumi, M., Saadaoui, S., Ben Salem, M.M., Gaquiere, C., Maaref, H.

Journal:

The European Physical Journal Applied Physics

Year:

2011

Language:

english

File:

PDF, 822 KB

english, 2011

74

Optimization of a power pseudomorphic double heterojunction FET

C. Gaquière, D. Théron, B. Bonte, Y. Crosnier

Journal:

Microwave and Optical Technology Letters

Year:

1994

Language:

english

File:

PDF, 303 KB

english, 1994

75

Breakdown analysis of an asymmetrical double recessed power MESFET's

Gaquiere, C., Bonte, B., Theron, D., Crosnier, Y., Arsene-Henri, P., Pacou, T.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 508 KB

english, 1995

76

An automated system for measuring power devices in Ka-band

Bonte, B., Gaquiere, C., Bourcier, E., Lemeur, G., Crosnier, Y.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

1998

Language:

english

File:

PDF, 133 KB

english, 1998

77

Effects on the linearity in Ka band of single or double-recessed PHEMT's

Gaquiere, C., Bue, F., Delemotte, P., Crosnier, Y., Carnez, B., Pons, D.

Journal:

IEEE Microwave and Guided Wave Letters

Year:

2000

Language:

english

File:

PDF, 94 KB

english, 2000

78

InP HEMT downscaling for power applications at W band

Medjdoub, F., Zaknoune, M., Wallart, X., Gaquiere, C., Dessenne, F., Thobel, J.-L., Theron, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 1.23 MB

english, 2005

79

AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

Gerbedoen, J.-C., Soltani, A., Joblot, S., De Jaeger, J.-C., Gaquiere, C., Cordier, Y., Semond, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 471 KB

english, 2010

80

Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors

Curutchet, A., Theron, D., Werquin, M., Ducatteau, D., Happy, H., Dambrine, G., Bethoux, J.M., Derycke, V., Gaquiere, C.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2008

Language:

english

File:

PDF, 1018 KB

english, 2008

81

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4by CDLTS

M. Gassoumi, B. Grimbert, C. Gaquiere, H. Maaref

Journal:

Year:

2012

Language:

english

File:

PDF, 222 KB

english, 2012

82

Spatial Mapping of Electroluminescence Due to Impact Ionization in High Electron Mobility Transistors

Gaquiere, C., Boudart, B., Dhamelincourt, P. A.

Journal:

Applied Spectroscopy

Year:

2000

Language:

english

File:

PDF, 502 KB

english, 2000

83

InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage

Zaknoune, M., Bonte, B., Gaquiere, C., Cordier, Y., Druelle, Y., Theron, D., Crosnier, Y.

Journal:

IEEE Electron Device Letters

Year:

1998

Language:

english

File:

PDF, 69 KB

english, 1998

84

First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate

Hoel, V., Defrance, N., De Jaeger, J.C., Gerard, H., Gaquiere, C., Lahreche, H., Langer, R., Wilk, A., Lijadi, M., Delage, S.

Journal:

Electronics Letters

Year:

2008

Language:

english

File:

PDF, 150 KB

english, 2008

85

[IEEE 2011 International Conference on Microelectronic Test Structures (ICMTS) - Amsterdam, Netherlands (2011.04.4-2011.04.7)] 2011 IEEE ICMTS International Conference on Microelectronic Test Structures - Silicon high frequency test structures improvement for millimeter wave varactors characterization optimization and modeling

Sonnerat, F., Debroucke, R., Morandini, Y., Gloria, D., Arnould, J-D, Gaquiere, C.

Year:

2011

Language:

english

File:

PDF, 511 KB

english, 2011

86

[IEEE 2007 European Microwave Integrated Circuit Conference - Munich, Germany (2007.10.8-2007.10.10)] 2007 European Microwave Integrated Circuit Conference - AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication

Boulay, S., Touati, S., Sar, A., Hoel, V., Gaquiere, C., De Jaeger, J.C., Joblot, S., Cordier, Y., Semond, F., Massies, J.

Year:

2007

Language:

english

File:

PDF, 233 KB

english, 2007

87

High-power GaN MESFET on sapphire substrate

Gaquiere, C., Trassaert, S., Boudart, B., Crosnier, Y.

Journal:

IEEE Microwave and Guided Wave Letters

Year:

2000

Language:

english

File:

PDF, 86 KB

english, 2000

88

High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

Pottrain, A., Lacave, T., Ducatteau, D., Gloria, D., Chevalier, P., Gaquiere, C.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 488 KB

english, 2012

89

Terahertz detection by GaN/AlGaN transistors

El Fatimy, A., Boubanga Tombet, S., Teppe, F., Knap, W., Veksler, D.B., Rumyantsev, S., Shur, M.S., Pala, N., Gaska, R., Fareed, Q., Hu, X., Seliuta, D., Valusis, G., Gaquiere, C., Theron, D., Cappy,

Journal:

Electronics Letters

Year:

2006

Language:

english

File:

PDF, 122 KB

english, 2006

90

[IEEE 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Austin, TX, USA (2010.10.4-2010.10.6)] 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs

Lacave, T., Chevalier, P., Campidelli, Y., Buczko, M., Depoyan, L., Berthier, L., Avenier, G., Gaquiere, C., Chantre, A.

Year:

2010

Language:

english

File:

PDF, 268 KB

english, 2010

91

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

Sarazin, N., Morvan, E., di Forte Poisson, M.A., Oualli, M., Gaquiere, C., Jardel, O., Drisse, O., Tordjman, M., Magis, M., Delage, S.L.

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 321 KB

english, 2010

92

Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

Mosbahi, H., Gassoumi, M., Saidi, Imen, Mejri, Houcine, Gaquière, C., Zaidi, M.A., Maaref, H.

Journal:

Current Applied Physics

Year:

2013

Language:

english

File:

PDF, 679 KB

english, 2013

93

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Alomari, M., Medjdoub, F., Carlin, J.-F., Feltin, E., Grandjean, N., Chuvilin, A., Kaiser, U., Gaquiere, C., Kohn, E.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 450 KB

english, 2009

94

Proceedings of SPIE [SPIE Gallium Nitride Materials and Devices VII - San Francisco, California, USA (Monday 23 January 2012)] - AlGaN/GaN based field effect transistors for terahertz detection and imaging

Sakowicz, M., Lifshits, M. B., Klimenko, O. A., Coquillat, D., Dyakonova, N., Teppe, F., Gaquiere, C., Poisson, M. A., Delage, S., Knap, W.

Year:

2012

Language:

english

File:

PDF, 1.50 MB

english, 2012

95

AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz

Minko, A., Hoel, V., Morvan, E., Grimbert, B., Soltani, A., Delos, E., Ducatteau, D., Gaquiere, C., Theron, D., De Jaeger, J.C., Lahreche, H., Wedzikowski, L., Langer, R., Bove, P., Bove, P.

Journal:

IEEE Electron Device Letters

Year:

2004

Language:

english

File:

PDF, 128 KB

english, 2004

96

Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

Saadaoui, Salah, Salem, Mohamed Mongi Ben, Fathallah, Olfa, Gassoumi, Malek, Gaquière, Christophe, Maaref, Hassen

Journal:

Physica B: Condensed Matter

Year:

2013

Language:

english

File:

PDF, 720 KB

english, 2013

97

[IEEE 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Orlanda, FL, USA (2008.1.23-2008.1.25)] 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - High Frequency Characterization of Compact N+Poly/Nwell Varactor Using Waffle-Layout

Morandini, Yvan, Larchanche, Jean-Francois, Gaquiere, Christophe

Year:

2008

Language:

english

File:

PDF, 290 KB

english, 2008

98

[IEEE 2007 IEEE/MTT-S International Microwave Symposium - Honolulu, HI, USA (2007.06.3-2007.06.8)] 2007 IEEE/MTT-S International Microwave Symposium - AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

Gaquiere, C., Medjdoub, F., Carlin, J.-F., Vandenbrouck, S., Delos, E., Feltin, E., Grandjean, N., Kohn, E.

Year:

2007

Language:

english

File:

PDF, 1.28 MB

english, 2007

99

[IEEE 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS) - Cancun, Mexico (2011.01.23-2011.01.27)] 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems - Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Faucher, M., Cordier, Y., Semond, F., Brandli, V., Grimbert, B., Amar, A. B., Werquin, M., Boyaval, C., Gaquiere, C., Theron, D., Buchaillot, L.

Year:

2011

Language:

english

File:

PDF, 1.47 MB

english, 2011

100

[IEEE 2010 IEEE Radio Frequency Integrated Circuits Symposium - Anaheim, CA, USA (2010.05.23-2010.05.25)] 2010 IEEE Radio Frequency Integrated Circuits Symposium - A high quality factor varactor technology evaluation

Debroucke, Romain, Jan, Sebastien, Larchanche, Jean-Francois, Gaquiere, Christophe

Year:

2010

Language:

english

File:

PDF, 340 KB

english, 2010