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51

3C-Silicon Carbide Nanowire FET: An Experimental and Theoretical Approach

Rogdakis, K., Seoung-Yong Lee, Bescond, M., Sang-Kwon Lee, Bano, E., Zekentes, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.01 MB

english, 2008

52

Microwave Modulators Based on 4H-SiC p-i-n Diodes

Zekentes, K., Camara, N., Basanets, V.V., Boltovets, M.S., Kryvutsa, V.A., Orechovskij, V.O., Simonchuk, V.I., Zorenko, A.V., Bano, E.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2008

Language:

english

File:

PDF, 2.72 MB

english, 2008

53

Experimental determination of electron drift velocity in 4H-SiC p/sup +/-n-n/sup +/ avalanche diodes

Vassilevski, K.V., Zekentes, K., Zorenko, A.V., Romanov, L.P.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 96 KB

english, 2000

54

Microwave p-i-n diodes and switches based on 4H-SiC

Camara, N., Zekentes, K., Romanov, L.P., Kirillov, A.V., Boltovets, M.S., Vassilevski, K.V., Haddad, G.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 143 KB

english, 2006

55

[IEEE 2005 International Semiconductor Conference - Sinaia, Romania (3-5 Oct. 2005)] CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005. - 4H-SiC PIN diodes for microwave applications

Zekentes, K., Camara, N., Romanov, L., Kirillov, A., Boltovets, M.S., Lebedev, A., Vassilevski, K.V.

Year:

2005

Language:

english

File:

PDF, 5.51 MB

english, 2005

56

Weak localization of 2D electron gas in GaAsGa1−xAlxAs heterostructures under hydrostatic pressure

K. Zekentes, S. Ravanomanjaato, R. Piotrzkowski, E. Litwin-Staszewska, J.L. Robert, J.P. Andre, P.M. Frijlink

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 323 KB

english, 1990

57

Surfactant-mediated MBE growth of β-SiC on Si substrates

K Zekentes, K Tsagaraki

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 1.22 MB

english, 1999

58

TEM analysis of InGaAs/InAlAs epitaxial layers grown over InP patterned substrates

F. Peiro, A. Cornet, J.R. Morante, K. Zekentes, A. Georgakilas

Journal:

Materials Letters

Year:

1994

Language:

english

File:

PDF, 942 KB

english, 1994

59

Experimental observation of microwave oscillations produced by pulsed silicon carbide IMPATT diode

Vassilevski, K.V., Zorenko, A.V., Zekentes, K.

Journal:

Electronics Letters

Year:

2001

Language:

english

File:

PDF, 415 KB

english, 2001

60

Optical properties of InGaAs films embedded in plasma etched InP wells

Georgakilas, A., Christou, A., Lefebvre, P., Allegre, J., Zekentes, K., Halkias, G.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 680 KB

english, 1992

61

SiC nanowires: material and devices

Zekentes, K, Rogdakis, K

Journal:

Journal of Physics D Applied Physics

Year:

2011

Language:

english

File:

PDF, 3.06 MB

english, 2011

62

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

Rogdakis, K, Poli, S, Bano, E, Zekentes, K, Pala, M G

Journal:

Year:

2009

Language:

english

File:

PDF, 595 KB

english, 2009

63

Preface

Zekentes, Konstantinos

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 77 KB

english, 1997

64

Fabrication of Ion-Implanted Si Nanowire p-FETs

Lee, Seung-Yong, Jang, Chan-Oh, Kim, Dong-Joo, Hyung, Jung-Hwan, Rogdakis, Konstantinos, Bano, Edwige, Zekentes, Konstantinos, Lee, Sang-Kwon

Journal:

The Journal of Physical Chemistry C

Year:

2008

Language:

english

File:

PDF, 1.34 MB

english, 2008

65

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Study on main electron scattering mechanisms in InGaAs/InAlAs single quantum wells by photoreflectance measurements versus temperature

Baltagi, Y., Bru, C., Benyattou, T., Moneger, S., Guillot, G., Georgakilas, A., Zekentes, K., Halkias, G.

Year:

1993

Language:

english

File:

PDF, 369 KB

english, 1993

66

[IEEE 2006 European Microwave Conference - Manchester, UK (2006.09.10-2006.09.15)] 2006 European Microwave Conference - Microwave p-i-n diodes and switches based on 4H-SiC

Zekentes, Konstantinos, Camara, Nicolas, Konstantinidis, George, Romanov, Leonid, Kirillov, Aleksey, Boltovets, Mykola

Year:

2006

Language:

english

File:

PDF, 4.11 MB

english, 2006

67

[IEEE Oper. Center 2003 International Semiconductor Conference. CAS 2003 - Sinaia, Romania (28 Sept.-2 Oct. 2003)] 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676) - Current transport mechanisms in 4H-SiC pin diodes

Camara, N., Bano, E., Zekentes, K.

Year:

2003

Language:

english

File:

PDF, 234 KB

english, 2003

68

Observation of metastable effects in pseudomorphic heterostructures InCaAs/InAlAs

Konczewicz, L., Mercy, J. M., Baj, M., Robert, J. L., Zekentes, K., Georgakilas, A., Halkias, G., Christou, A.

Journal:

High Pressure Research

Year:

1992

Language:

english

File:

PDF, 224 KB

english, 1992

69

[IEEE 2006 25th International Conference on Microelectronics - Belgrade, Serbia and Montenegro (14-17 May 2006)] 2006 25th International Conference on Microelectronics - High Speed Modulator in Q-band Range on 4H-SiC p-i-n Diodes

Kakanakov, R.D., Kolaklieva, L.P., Romanov, L.P., Kirillov, A.V., Lebedev, A.A., Boltovets, M.S., Zekentes, K.

Year:

2006

Language:

english

File:

PDF, 805 KB

english, 2006

70

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Admittance spectroscopy measurements on AlInAs/GaInAs/AlInAs quantum well structures: Evidence of a deep level assisted tunneling

Ababou, S., Guillot, G., Clark, S., Halkias, G., Georgakilas, A., Zekentes, K., Stievenard, D., Letartre, X., Lannoo, M.

Year:

1993

Language:

english

File:

PDF, 370 KB

english, 1993

71

Room-temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates

Monéger, S., Tabata, A., Bru, C., Guillot, G., Georgakilas, A., Zekentes, K., Halkias, G.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 622 KB

english, 1993

72

Electric-field dependence of interband transitions in In0.53Ga0.47As/In0.52Al0.48As single quantum wells by room-temperature electrotransmittance

Dimoulas, A., Giapis, K. P., Leng, J., Halkias, G., Zekentes, K., Christou, A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.09 MB

english, 1992

73

Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction

Cimalla, V., Zekentes, K.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 413 KB

english, 2000

74

Electron traps in β-SiC grown by chemical vapor deposition on silicon (100) substrates

K. Zekentes, M. Kayiambaki, G. Constantinidis

Year:

1995

Language:

english

File:

PDF, 328 KB

english, 1995

75

Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells

Monéger, S., Baltagi, Y., Benyattou, T., Tabata, A., Ragot, B., Guillot, G., Georgakilas, A., Zekentes, K., Halkias, G.

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 646 KB

english, 1993

76

[IEEE LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Newport, RI, USA (21-24 April 1992)] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - InGaAs molecular beam epitaxy in InP wells prepared by reactive ion etching

Georgakilas, A., Zekentes, K., Tsagaraki, K., Lefebvre, P., Allegre, J., Christou, A.

Year:

1992

File:

PDF, 795 KB

1992

77

Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs

Rogdakis, Konstantinos, Bano, Edwige, Montes, Laurent, Bechelany, Mikhael, Cornu, David, Zekentes, Konstantinos

Journal:

IEEE Transactions on Nanotechnology

Year:

2011

Language:

english

File:

PDF, 520 KB

english, 2011

78

Degenerate electron gas effects in the modulation spectroscopy of pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures

Dimoulas, A., Zekentes, K., Androulidaki, M., Kornelios, N., Michelakis, C., Hatzopoulos, Z.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 667 KB

english, 1993

79

[IEEE LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Newport, RI, USA (21-24 April 1992)] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Optical characterizations of lattice matched and strained GaInAs/AlInAs single quantum wells

Tabata, A., Benyattou, T., Moneger, S., Baltagi, Y., Grange, J., Guillot, G., Georgakilas, A., Zekentes, K., Halkias, G.

Year:

1992

File:

PDF, 241 KB

1992

80

[IEEE LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Newport, RI, USA (21-24 April 1992)] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Suppression of the kink effect in InGaAs/InAlAs HEMTs grown by MBE by optimizing the InAlAs buffer layer

Georgakilas, A., Zekentes, K., Kornilios, N., Halkias, G., Dimoulas, A., Christou, A., Peiro, F., Cornet, A., Benyattou, T., Tabata, A., Guillot, G.

Year:

1992

File:

PDF, 287 KB

1992

81

Via Hole Formation in Silicon Carbide by Laser Micromachining

Zekentes, K., Zergioti, I., Klini, A., Constantinidis, G.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 408 KB

english, 2006

82

Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

Kakanakov, Roumen, Kassamakova, Liliana, Hristeva, N., Lepoeva, G., Kuznetsov, N.I., Zekentes, K.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 338 KB

2002

83

Silicon Carbide Zener Diodes

Vassilevski, Konstantin V., Zekentes, K., Bogdanova, E.V., Lagadas, M., Zorenko, A.V.

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 339 KB

2001

84

Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC

Camara, Nicolas, Constantinidis, G., Zekentes, K.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 448 KB

english, 2003

85

Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching

Camara, Nicolas, Thuaire, Aurelie, Bano, Edwige, Zekentes, K.

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 1.02 MB

english, 2005

86

Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

Zekentes, Konstantinos, Basanets, Volodymyr V., Boltovets, Mykola S., Kryvutsa, Valentyn A., Orechovskij, Volodymyr O., Simonchuk, Vasyl I., Zorenko, Alexander V., Romanov, Leonid P., Kirillov, Alekse

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 358 KB

english, 2009

87

Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime

Rogdakis, Konstantinos, Bescond, Marc, Bano, Edwige, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 335 KB

english, 2009

88

Electrochemical Characterization of p-Type Hexagonal SiC

Kayambaki, M., Zekentes, K., Tsagaraki, Katerina, Pernot, Etienne, Yakimova, Rositza

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 462 KB

2001

89

Fabrication Issues of 4H-SiC Static Induction Transistors

Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Cayrel, Frédéric, Alquier, Daniel, Gao, Zhuo, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 664 KB

english, 2012

90

Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range

Boltovets, Mykola S., Basanets, Volodymyr V., Camara, Nicolas, Krivutsa, Valentyn A., Zekentes, K.

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 281 KB

english, 2005

91

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

Rogdakis, Konstantinos, Bano, Edwige, Montes, Laurent, Bechelany, Mikhael, Cornu, David, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 610 KB

english, 2011

92

Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions

Vassilevski, Konstantin V., Zekentes, K., Constantinidis, G., Papanicolaou, N., Nikitina, Irina P., Babanin, A.I.

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 387 KB

english, 2000

93

About the Nature of Recombination Current in 4H-SiC pn Structures

Strel'chuk, Anatoly M., Mashichev, A.V., Lebedev, A.A., Volkova, A.N., Zekentes, K.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 1.25 MB

english, 2006

94

Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC

Kassamakova, Liliana, Kakanakov, Roumen, Kassamakov, Ivan, Zekentes, K., Tsagaraki, Katerina, Atanasova, Genoveva

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 407 KB

2001

95

Low Voltage Silicon Carbide Zener Diode

Vassilevski, Konstantin V., Zekentes, K., Horsfall, A.B., Johnson, C. Mark, Wright, Nicolas G.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 262 KB

english, 2004

96

In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces

Cimalla, Volker, Zekentes, K., Tsagaraki, Katerina, Stauden, Thomas, Scharmann, F., Pezoldt, Jörg

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 377 KB

2001

97

Current Transport Mechanisms in 4H-SiC PiN Diodes

Camara, Nicolas, Bano, Edwige, Zekentes, K.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 1.40 MB

english, 2004

98

Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 ºC Temperature Range

Boltovets, Mykola S., Basanets, Volodymyr V., Camara, Nicolas, Krivutsa, Valentyn A., Zekentes, K.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 303 KB

english, 2006

99

Growth and Characterization of Three-Dimensional SiC Nanostructures on Si

Cimalla, Volker, Zekentes, K.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 314 KB

2002

100

Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond

Brezeanu, G., Brezeanu, M., Udrea, F., Amaratunga, G., Boianceanu, C., Badila, M., Zekentes, K., Visoreanu, Adi

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 668 KB

english, 2007