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51

Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers

A.T. Pham, C. Jungemann, M. Klawitter, B. Meinerzhagen

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 488 KB

english, 2008

52

A linear response Monte Carlo algorithm for inversion layers and magnetotransport

Christoph Jungemann, Anh-Tuan Pham, Bernd Meinerzhagen

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 248 KB

english, 2006

53

The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors

Meinerzhagen, B., Engl, W.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 773 KB

english, 1988

54

Hall factors of Si NMOS inversion layers for MAGFET modeling

Jungemann, C., Dudenbostel, D., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1999

Language:

english

File:

PDF, 53 KB

english, 1999

55

Analysis of the stochastic error of stationary Monte Carlo device simulations

Jungemann, C., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 156 KB

english, 2001

56

Comparative study of electron transit times evaluated by DD, HD, and MC device simulation for a SiGe HBT

Jungemann, C., Neinhus, B., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 84 KB

english, 2001

57

Quasi-simultaneous solution method: A new highly efficient strategy for numerical MOST simulations

Meinerzhagen, B., Dirks, H.K., Engl, W.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 776 KB

english, 1985

58

Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory

Jungemann, C., Neinhus, B., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 318 KB

english, 2002

59

Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

Jungemann, C., Neinhus, B., Decker, S., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 273 KB

english, 2002

60

On the applicability of nonself-consistent Monte Carlo device simulations

Jungemann, C., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 193 KB

english, 2002

61

Failure of moments-based transport models in nanoscale devices near equilibrium

Jungemann, C., Grasser, T., Neinhuus, B., Meinerzhagen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 314 KB

english, 2005

62

Physics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on-Insulator

Pham, A.-T.., Jungemann, C.., Meinerzhagen, B..

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 1.15 MB

english, 2007

63

[IEEE Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Grenoble, France (12-16 Sept. 2005)] Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Convergence of the legendre polynomial expansion of the boltzmann equation for nanoscale devices

Jungemann, C., Bollhofer, M., Meinerzhagen, B.

Year:

2005

Language:

english

File:

PDF, 303 KB

english, 2005

64

[IEEE 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS) - Montreal, QC, Canada (2012.06.17-2012.06.20)] 10th IEEE International NEWCAS Conference - Replica bit-line technique for embedded multilevel gain-cell DRAM

Khalid, Muhammad Umer, Meinerzhagen, Pascal, Burg, Andreas

Year:

2012

Language:

english

File:

PDF, 1.91 MB

english, 2012

65

Benchmarking of Standard-Cell Based Memories in the Sub- Domain in 65-nm CMOS Technology

Meinerzhagen, P., Sherazi, S.M.Y., Burg, A., Rodrigues, J.N.

Journal:

IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Year:

2011

Language:

english

File:

PDF, 1.59 MB

english, 2011

66

Device modeling

Engl, W.L., Dirks, H.K., Meinerzhagen, B.

Journal:

Proceedings of the IEEE

Year:

1983

Language:

english

File:

PDF, 2.35 MB

english, 1983

67

[IEEE 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Beijing, China (Oct. 18-21, 2004)] Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - An accurate and efficient surface scattering model for Monte Carlo device simulation

Grgec, D., Jungemann, C., Chi Dong Nguyen,, Noinhus, B., Meinerzhagen, B.

Year:

2004

Language:

english

File:

PDF, 1.09 MB

english, 2004

68

[IEEE 2012 IEEE 27th Convention of Electrical & Electronics Engineers in Israel (IEEEI 2012) - Eilat, Israel (2012.11.14-2012.11.17)] 2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel - Review and classification of gain cell eDRAM implementations

Teman, Adam, Meinerzhagen, Pascal, Burg, Andreas, Fish, Alexander

Year:

2012

Language:

english

File:

PDF, 345 KB

english, 2012

69

Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle

Jungemann, C., Pham, A. T., Meinerzhagen, B., Ringhofer, C., Bollhofer, M.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 628 KB

english, 2006

70

Quasi-Simultaneous Solution Method: A New Highly Efficient Strategy for Numerical MOST Simulations

Meinerzhagen, B., Dirks, H.K., Engl, W.L.

Journal:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Year:

1985

Language:

english

File:

PDF, 1008 KB

english, 1985

71

A new nonlinear relaxation scheme for solving semiconductor device equations

Bach, K.H., Dirks, H.K., Meinerzhagen, B., Engl, W.L.

Journal:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Year:

1991

Language:

english

File:

PDF, 1.08 MB

english, 1991

72

[Computational Microelectronics] Hierarchical Device Simulation || Scattering Mechanisms

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.56 MB

english, 2003

73

[Computational Microelectronics] Hierarchical Device Simulation || Introduction

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.89 MB

english, 2003

74

[Computational Microelectronics] Hierarchical Device Simulation || Full-Band Structure

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 2.19 MB

english, 2003

75

[Computational Microelectronics] Hierarchical Device Simulation || Semiclassical Transport Theory

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.70 MB

english, 2003

76

[Computational Microelectronics] Hierarchical Device Simulation || Device Simulation

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 2.75 MB

english, 2003

77

[Computational Microelectronics] Hierarchical Device Simulation || Momentum-Based Transport Models

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 2.40 MB

english, 2003

78

[Computational Microelectronics] Hierarchical Device Simulation || Stochastic Properties of Monte-Carlo Device Simulations

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.63 MB

english, 2003

79

[Computational Microelectronics] Hierarchical Device Simulation || Results

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 6.12 MB

english, 2003

80

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Solving Boltzmann Transport Equation without Monte-Carlo algorithms - new methods for industrial TCAD applications

Meinerzhagen, B., Pham, A. T., Hong, S.-M., Jungemann, C.

Year:

2010

Language:

english

File:

PDF, 136 KB

english, 2010

81

Full band Monte Carlo investigation of electron transport in strained Si grown on Si[sub 1âx]Ge[sub x] substrates

Bufler, F. M., Graf, P., Keith, S., Meinerzhagen, B.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 315 KB

english, 1997

82

Effects of band structure and phonon models on hot electron transport in silicon

C. Jungemann, S. Keith, F. M. Bufler, B. Meinerzhagen

Journal:

Electrical Engineering (Archiv fur Elektrotechnik)

Year:

1996

Language:

english

File:

PDF, 240 KB

english, 1996

83

[IEEE 2012 IEEE/IFIP 20th International Conference on VLSI and System-on-Chip (VLSI-SoC) - Santa Cruz, CA, USA (2012.10.7-2012.10.10)] 2012 IEEE/IFIP 20th International Conference on VLSI and System-on-Chip (VLSI-SoC) - TamaRISC-CS: An ultra-low-power application-specific processor for compressed sensing

Constantin, Jeremy, Dogan, Ahmed, Andersson, Oskar, Meinerzhagen, Pascal, Rodrigues, Joachim Neves, Atienza, David, Burg, Andreas

Year:

2012

Language:

english

File:

PDF, 938 KB

english, 2012

84

Replica Technique for Adaptive Refresh Timing of Gain-Cell-Embedded DRAM

Teman, Adam, Meinerzhagen, Pascal, Giterman, Robert, Fish, Alexander, Burg, Andreas

Journal:

IEEE Transactions on Circuits and Systems II: Express Briefs

Year:

2014

Language:

english

File:

PDF, 948 KB

english, 2014

85

Growth of graphene-like films for NO2 detection

Samsonau, S.V., Shvarkov, S.D., Meinerzhagen, F., Wieck, A.D., Zaitsev, A.M.

Journal:

Sensors and Actuators B: Chemical

Year:

2013

Language:

english

File:

PDF, 885 KB

english, 2013

86

Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices

Jungemann, C., Pham, A.-T., Hong, S.-M., Smith, L., Meinerzhagen, B.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.14 MB

english, 2013

87

Formation of carbon nanofilms on single crystal quartz

Samsonau, S.V., Dzedzits, E., Shvarkov, S.D., Meinerzhagen, F., Wieck, A.D., Zaitsev, A.M.

Journal:

Sensors and Actuators B: Chemical

Year:

2013

Language:

english

File:

PDF, 1.22 MB

english, 2013

88

Determination of correlation length for thickness fluctuations in thin oxide and fluoride films

Tyaginov, S E, Vexler, M I, Sokolov, N S, Suturin, S M, Banshchikov, A G, Grasser, T, Meinerzhagen, B

Journal:

Journal of Physics D Applied Physics

Year:

2009

Language:

english

File:

PDF, 456 KB

english, 2009

89

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

Krishnamohan, Tejas, Kim, Donghyun, Thanh Viet Dinh,, Pham, Anh-tuan, Meinerzhagen, Bernd, Jungemann, Christoph, Saraswat, Krishna

Year:

2008

Language:

english

File:

PDF, 837 KB

english, 2008

90

[IEEE 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) - Grenoble, France (2014.6.30-2014.7.3)] 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) - A low power, small area, fully integrated 5.5GHz CMOS LC-VCO

Haddadinejad, Shaahin, Noculak, Achim, Hinz, Michael, Meinerzhagen, Bernd

Year:

2014

Language:

english

File:

PDF, 562 KB

english, 2014

91

Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

Kazi, Ibrahim, Meinerzhagen, Pascal, Gaillardon, Pierre-Emmanuel, Sacchetto, Davide, Leblebici, Yusuf, Burg, Andreas, De Micheli, Giovanni

Journal:

IEEE Transactions on Circuits and Systems I: Regular Papers

Year:

2014

Language:

english

File:

PDF, 1.90 MB

english, 2014

92

[IEEE 2010 IEEE Asian Solid-State Circuits Conference (A-SSCC) - Beijing (2010.11.8-2010.11.10)] 2010 IEEE Asian Solid-State Circuits Conference - A 15.8 pJ/bit/iter quasi-cyclic LDPC decoder for IEEE 802.11n in 90 nm CMOS

Roth, C, Meinerzhagen, P, Studer, C, Burg, A

Year:

2010

Language:

english

File:

PDF, 193 KB

english, 2010

93

[IEEE ESSDERC 2003. 33rd European Solid-State Device Research - ESSDERC '03 - Estoril, Portugal (16-18 Sept. 2003)] Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) - MC simulation of strained Si/SiGe devices

Jungemann, C., Meinerzhagen, B.

Year:

2003

Language:

english

File:

PDF, 364 KB

english, 2003

94

Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x/

F. Bufler, P. Graf, B. Meinerzhagen, B. Adeline, M. Rieger, H. Kibbel, G. Fischer

Journal:

IEEE Electron Device Letters

Year:

1997

Language:

english

File:

PDF, 65 KB

english, 1997

95

[IEEE [1987] NASECODE V: Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits - Dublin, Ireland (1987.06.17-1987.06.19)] [1987] NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits - Two-Dimensional Numerical Substrate Current Modeling For N-channel MOS Transistors

Meinerzhagen, B.

Year:

1987

Language:

english

File:

PDF, 702 KB

english, 1987

96

[IEEE 2013 14th International Conference on Ultimate Integration on Silicon (ULIS 2013) - Coventry (2013.3.19-2013.3.21)] 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) - Accurate and efficient physical simulation of program disturb in scaled NAND flash memories

Kuligk, A., Chi Dong Nguyen,, Lohr, D., Beyer, V., Meinerzhagen, B.

Year:

2013

Language:

english

File:

PDF, 1.08 MB

english, 2013

97

[IEEE International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V - Honolulu, HI, USA (5-6 June 1994)] Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V - Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs

Bork, I., Jungemann, C., Meinerzhagen, B., Engl, W.L.

Year:

1994

Language:

english

File:

PDF, 236 KB

english, 1994

98

[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - An accurate, experimentally verified electron minority carrier mobility model for Si and SiGe

Jungemann, C., Heinemann, B., Tittelbach-Helmrich, K., Meinerzhagen, B.

Year:

2000

Language:

english

File:

PDF, 287 KB

english, 2000

99

[IEEE 2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS) - Paris, France (2013.06.16-2013.06.19)] 2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS) - A ReRAM-based non-volatile flip-flop with sub-VT read and CMOS voltage-compatible write

Kazi, Ibrahim, Meinerzhagen, Pascal, Gaillardon, Pierre-Emmanuel, Sacchetto, Davide, Burg, Andreas, De Micheli, Giovanni

Year:

2013

Language:

english

File:

PDF, 1.63 MB

english, 2013

100

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - A Convergence Enhancement Method for Deterministic Multisubband Device Simulations of Double Gate PMOSFETs

Pham, A. T., Jungemann, C., Meinerzhagen, B.

Year:

2009

Language:

english

File:

PDF, 218 KB

english, 2009