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51

Structural and electrical properties of Zn(Al)O layers for transparent metal oxide applications

Y. B. Kwon, M. Abouzaid, P. Ruterana, J. H. Je

Journal:

physica status solidi (b)

Year:

2007

Language:

english

File:

PDF, 268 KB

english, 2007

52

Metalorganic Chemical Vapor Deposition Growth of a GaN Epilayer on an Annealed GaN Buffer Layer

F. Degave, P. Ruterana, G. Nouet, J.H. Je, C.C. Kim

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 158 KB

english, 2003

53

Transmission electron microscopy of GaN layers in-situ doped with Er during plasma assisted MBE

T. Wojtowicz, P. Ruterana, D. S. Lee, A. J. Steckl

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 542 KB

english, 2005

54

P-type doping of semipolar GaN(11$ ar 2 $2) by plasma-assisted molecular-beam epitaxy

A. Das, L. Lahourcade, J. Pernot, S. Valdueza-Felip, P. Ruterana, A. Laufer, M. Eickhoff, E. Monroy

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 147 KB

english, 2010

55

Magnetic-field effects in the luminescence of V-shaped quantum wires

R. Rinaldi, P. V. Giugno, R. Cingolani, F. Rossi, E. Molinari, M. Ferrara, U. Marti, D. Martin, F. Morier-Gemoud, P. Ruterana, F. Reinhart

Journal:

Il Nuovo Cimento D

Year:

1995

Language:

english

File:

PDF, 264 KB

english, 1995

56

Formation and stability of di-transition-metal carbides TixZr1−xC, TixHf1−xC and HfxZr1−xC

D. Maouche, L. Louail, P. Ruterana, M. Maamache

Journal:

Computational Materials Science

Year:

2008

Language:

english

File:

PDF, 277 KB

english, 2008

57

Microstructure of a spray-formed Al/SiC composite

P. VERMAUT, P. RUTERANA

Journal:

Journal of Microscopy

Year:

1995

Language:

english

File:

PDF, 5.10 MB

english, 1995

58

Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon

Bilousov, O. V., Carvajal, J. J., Vilalta-Clemente, A., Ruterana, P., Díaz, F., Aguiló, M., O’Dwyer, C.

Journal:

Chemistry of Materials

Year:

2014

Language:

english

File:

PDF, 2.92 MB

english, 2014

59

Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers

Ruterana, P., Kret, S., Vivet, A., Maciejewski, G., Dluzewski, P.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 1.50 MB

english, 2002

60

Analysis of the Interfacial Relationship in GaN/(0001) AI2O3 Layers

Barbaray, B., Potin, V., Ruterana, Piere, Nouet, Gerard

Journal:

Materials Science Forum

Year:

1999

File:

PDF, 350 KB

1999

61

Growth defects in GaN layers on top of (0001) sapphire: a geometrical investigation of the misfit effect

Ruterana, V. Potin, B. Barbaray, G., P.

Journal:

Philosophical Magazine A

Year:

2000

Language:

english

File:

PDF, 1.08 MB

english, 2000

62

Indium distribution inside quantum wells: The effect of growth interruption in MBE

Sanchez, A. M., Ruterana, P., Kret, S., Dłużewski, P., Maciejewski, G., Grandjean, N., Damilano, B.

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 360 KB

english, 2002

63

Microstructure of GaN Grown on (1120) Sapphire

Ruterana, P., Wickenden, A. E., Twigg, M. E., Koleske, D.D., Henry, R. L., Tottereau, O.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 1.02 MB

english, 2000

64

Microdiffraction, EDS, and HREM Investigation for Phase Identification With the Electron Microscope

Ruterana, P., Redjaïmia, A.

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 2.58 MB

english, 1999

65

Nitride Semiconductors (Handbook on Materials and Devices) || Plasma-Assisted Molecular Beam Epitaxy of III-V Nitrides

Ruterana, Pierre, Albrecht, Martin, Neugebauer, Jörg

Year:

2003

Language:

english

File:

PDF, 1.70 MB

english, 2003

66

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP (Phys. Status Solidi B 10/2016)

Bonato, Leo, Arikan, Ismail Firat, Desplanque, Ludovic, Coinon, Christophe, Wallart, Xavier, Wang, Yi, Ruterana, Pierre, Bimberg, Dieter

Journal:

physica status solidi (b)

Year:

2016

File:

PDF, 2.02 MB

2016

67

Nitride Semiconductors (Handbook on Materials and Devices) || Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation, and Interaction Mechanisms

Ruterana, Pierre, Albrecht, Martin, Neugebauer, Jörg

Year:

2003

Language:

english

File:

PDF, 2.13 MB

english, 2003

68

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

Mohamad, Ranim, Chauvat, Marie Pierre, Kret, Slawomir, Gamarra, Piero, Delage, Sylvain, Hounkpati, Viwanou, Lacam, Cedric, Chen, Jun, Ruterana, Pierre

Journal:

Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 2.34 MB

english, 2019

69

Investigation of Refractive Index and Optical Propagation Loss in Gallium Nitride Based Waveguides

E. Dogheche, P. Ruterana, G. Nouet, F. Omnes, P. Gibart

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 78 KB

english, 2001

70

Effect of N doping on magnetic properties of (Zn, Mn)O thin films deposited by radio frequency magnetron sputtering

C. Liu, B. Xiao, F. Yun, H. Lee, Ü. Özgür, Y.T. Moon, H. Morkoç, M. Abouzaid, P. Ruterana

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 412 KB

english, 2006

71

Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy

P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoç

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 588 KB

english, 1997

72

Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN

T. Wójtowicz, F. Gloux, P. Ruterana, G. Nouet, L. Bodiou, A. Braud, K. Lorenz, E. Alves

Journal:

physica status solidi (b)

Year:

2006

Language:

english

File:

PDF, 304 KB

english, 2006

73

The microstructure and properties of InN layers

P. Ruterana, A. L. Syrkin, E. Monroy, E. Valcheva, K. Kirilov

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 354 KB

english, 2010

74

Amorphisation of GaN during processing with rare earth ion beams

K. Lorenz, U. Wahl, E. Alves, T. Wojtowicz, P. Ruterana, S. Ruffenach, O. Briot

Journal:

Superlattices and Microstructures

Year:

2004

Language:

english

File:

PDF, 811 KB

english, 2004

75

A TEM study of ZnO layers deposited by MBE and RF magnetron sputtering

M. Abouzaid, P. Tailpied, P. Ruterana, C. Liu, B. Xiao, S.-J. Cho, Y.-T. Moon, H. Morkoç

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 3.19 MB

english, 2006

76

Chemical ordering in wurtzite In[sub x]Ga[sub 1−x]N layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

Ruterana, P., Nouet, G., Van der Stricht, W., Moerman, I., Considine, L.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 1.83 MB

english, 1998

77

Influence of low-temperature buffer layers on the optical waveguiding properties of Al[sub x]Ga[sub 1−x]N alloys

Dogheche, E., Ruterana, P., Omnes, F.

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 592 KB

english, 2001

78

The structure of ultrathin C/W and Si/W multilayers for high performance in soft x-ray optics

Ruterana, P., Chevalier, J.-P., Houdy, P.

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 924 KB

english, 1989

79

A transmission electron microscopy study of low-temperature reaction at the Co-Si interface

Ruterana, P., Houdy, P., Boher, P.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 1003 KB

english, 1990

80

Strong dependence of the fundamental band gap on the alloy composition in cubic In xGa1- xN and In xAl1- xN alloys

Dridi, Z., Bouhafs, B., Ruterana, P.

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 82 KB

english, 2003

81

The Atomic Structure of Mosaïc Grain Boundary Dislocations in GaN Epitaxial Layers

Potin, V., Nouet, G., Ruterana, P., Pond, R.C.

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 1.39 MB

english, 1999

82

SPIE Proceedings [SPIE Soft X-Rays Optics and Technology - Berlin, Germany (Tuesday 8 December 1987)] Soft X-Ray Optics and Technology - Performances Of C-W Multilayers As Soft X-Rays Optics : High Reflectivity In The Range 2d = 60 to 100 Å

Houdy, Ph ., Bodart, V., Hily, C., Ruterana, P., Nevot, L., Arbaoui, M., Alehyane, N., Barchewitz, R., Koch, E., Schmahl, Guenther A.

Year:

1986

Language:

english

File:

PDF, 6.71 MB

english, 1986

83

Nitride Semiconductors (Handbook on Materials and Devices) || Strain, Chemical Composition, and Defects Analysis at Atomic Level in GaN-based Epitaxial Layers

Ruterana, Pierre, Albrecht, Martin, Neugebauer, Jörg

Year:

2003

Language:

english

File:

PDF, 1.47 MB

english, 2003

84

Nitride Semiconductors (Handbook on Materials and Devices) ||

Ruterana, Pierre, Albrecht, Martin, Neugebauer, Jörg

Year:

2003

Language:

english

File:

PDF, 14.67 MB

english, 2003

85

Au Catalyzed Structural and Electrical Evolution of Ni/Au Contact to GaN

C.C. Kim, J.K. Kim, J.-L. Lee, J.H. Je, M.S. Yi, D.Y. Noh, Y. Hwu, P. Ruterana

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 80 KB

english, 2001

86

The structure of InAlN/GaN heterostructures for high electron mobility transistors

A. Vilalta-Clemente, M. A. Poisson, H. Behmenburg, C. Giesen, M. Heuken, P. Ruterana

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 462 KB

english, 2010

87

Size and shape of In rich clusters and InGaN QWs at the nanometer scale

P. Ruterana, P. Singh, S. Kret, H. K. Cho, H. J. Lee, E. K. Suh, G. Jurczak, G. Maciejewski, P. Dluzewski

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 189 KB

english, 2005

88

InN clusters in InxGa1–xN quantum wells: analysis of bond lengths

H. Lei, X. J. Jiang, J. Chen, I. Belabbas, P. Ruterana, G. Nouet

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 353 KB

english, 2007

89

Nanocrystalline thin titanium films grown on potassium bromide single crystals

T Braisaz, P Ruterana, G Nouet, Ph Komninou, Th Kehagias, Th Karakostas, P Poulopoulos, M Aggelakeris, N Flevaris, A Serra

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 1.41 MB

english, 1998

90

The atomic configurations of the a→ threading dislocation in GaN

A. Béré, J. Chen, P. Ruterana, A. Serra, G. Nouet

Journal:

Computational Materials Science

Year:

2002

Language:

english

File:

PDF, 108 KB

english, 2002

91

Defects induced in GaN by europium implantation

M. Mamor, V. Matias, A. Vantomme, A. Colder, P. Marie, P. Ruterana

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 306 KB

english, 2004

92

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

Valdueza-Felip, S., Rigutti, L., Naranjo, F. B., Ruterana, P., Mangeney, J., Julien, F. H., González-Herráez, M., Monroy, E.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 825 KB

english, 2012

93

heterostructures

Sánchez, A. M., Gass, M., Papworth, A. J., Goodhew, P. J., Ruterana, P.

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 799 KB

english, 2004

94

Observation of two atomic configurations for the {12̄10} stacking fault in wurtzite (Ga, Al) nitrides

Vermaut, P., Nouet, G., Ruterana, P.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 1.29 MB

english, 1999

95

The Fine Structure of the Mn Distribution in ZnO Layers Deposited by Magnetron Sputtering for Spintronic Application

Abouzaid, Morad, Ruterana, Pierre

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 6.00 MB

english, 2007

96

Structural Evolution of Ni/Au Contact on GaN(0001)

Kim, Chong Cook, Kim, Jong Kyu, Lee, Jong-Lam, Yi, Min-Su, Kim, Jin-Woo, Noh, Do Young, Hwu, Yeukuang, Ruterana, Pierre, Je, Jung Ho

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 551 KB

english, 2000

97

Blue, Yellow-Green and Red Simultaneous Emission from SiO2 Matrices Co-Implanted with Si and C

López, M., Garrido, B., Bonafos, C., González-Varona, O., Pérez-Rodríguez, A., Rodríguez, R., Ruterana, P., Morante, J. .R.

Journal:

MRS Proceedings

Year:

1997

Language:

english

File:

PDF, 1.05 MB

english, 1997

98

Effect of Cu doping on the structure and phase transition of directly synthesized FePt nanoparticles

Hanbin, Wang, Yang, Li, Xu, Chen, Dan, Shu, Xiang, Liu, Xina, Wang, Jun, Zhang, hao, Wang, Wang, Yi, Ruterana, Pierre

Journal:

Journal of Magnetism and Magnetic Materials

Year:

2016

Language:

english

File:

PDF, 757 KB

english, 2016

99

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Selective Area growth of GaSb nano-templates on GaAs (001) using atomic hydrogen assisted Molecular Beam Epitaxy

Desplanque, Ludovic, Fahed, Maria, Troadec, David, Ruterana, Pierre, Wallart, Xavier

Year:

2016

File:

PDF, 19 KB

2016

100

Nitride Semiconductors (Handbook on Materials and Devices) || Ohmic Contacts to GaN

Ruterana, Pierre, Albrecht, Martin, Neugebauer, Jörg

Year:

2003

Language:

english

File:

PDF, 635 KB

english, 2003

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