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51

[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - High Density Inductively Coupled Plasma Etching of Zinc-Oxide(ZnO) and Indium-Zinc Oxide(IZO)

Lim, Wantae, Stafford, Luc, Gila, Brent, Norton, David, Pearton, Steve, Ren, Fan, Song, Ju-Il, Park, Jae-Soung, Heo, Young-Woo, Lee, Joon-Hyung, Kim, Jeong-Joo

Year:

2007

Language:

english

File:

PDF, 390 KB

english, 2007

52

[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - Thermally Stable Novel Metal Contacts on Bulk, Single-Crystal n-type ZnO

Wright, Jonathan, Khanna, R., Voss, Lars F., Stafford, Luc, Gila, Brent, Norton, David, Pearton, Steve, Ren, Fan, Kravchenko, Ivan I.

Year:

2007

Language:

english

File:

PDF, 170 KB

english, 2007

53

SPIE Proceedings [SPIE SPIE Optics + Photonics - San Diego, California, USA (Sunday 13 August 2006)] Sixth International Conference on Solid State Lighting - Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films grown pulsed laser deposition

Li, Yuanjie, Ferguson, Ian T., Narendran, Nadarajah, Kim, Hyun-Sik, Erie, Jean-Marie, Taguchi, Tsunemasa, Ashdown, Ian E., Ren, Fan, Pearton, Stephen J., Norton, David P.

Year:

2006

Language:

english

File:

PDF, 279 KB

english, 2006

54

Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping

Kang, Tsung-Sheng, Ren, Fan, Gila, Brent P., Pearton, Steve J., Patrick, Erin, Cheney, David J., Law, Mark, Zhang, Ming-Lan

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 1.41 MB

english, 2015

55

Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping

Kang, Tsung Sheng, Lin, Yi-Hsuan, Ahn, Shihyun, Ren, Fan, Gila, Brent P., Pearton, Stephen J., Cheney, David J.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2016

Language:

english

File:

PDF, 927 KB

english, 2016

56

Valence and Conduction Band Offsets in Sputtered LaAlO 3 /InGaZnO 4 Heterostructures

Hays, David C., Gila, B. P., Pearton, S. J., Ren, F.

Journal:

ECS Journal of Solid State Science and Technology

Year:

2016

Language:

english

File:

PDF, 530 KB

english, 2016

57

Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions

Hays, David C., Gila, B.P., Pearton, S.J., Thorpe, Ryan, Ren, F.

Journal:

Year:

2017

Language:

english

File:

PDF, 997 KB

english, 2017

58

Band offsets in Sc 2 O 3 /ZnO heterostructures deposited by RF magnetron sputtering

Hays, David C., Gila, Brent P., Pearton, Stephen J., Kim, Byung-Jae, Ren, Fan, Jang, Tae Sung

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 666 KB

english, 2015

59

Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

Ahn, Shihyun, Dong, Chen, Zhu, Weidi, Kim, Byung-Jae, Hwang, Ya-Hsi, Ren, Fan, Pearton, Stephen J., Yang, Gwangseok, Kim, Jihyun, Patrick, Erin, Tracy, Brian, Smith, David J., Kravchenko, Ivan I.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 762 KB

english, 2015

60

Effect of deposition conditions and composition on band offsets in atomic layer deposited Hf x Si 1−x O y on InGaZnO 4

Hays, David C., Gila, Brent P., Pearton, Stephen J., Trucco, Andres, Thorpe, Ryan, Ren, Fan

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2017

Language:

english

File:

PDF, 1.08 MB

english, 2017

61

Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

Ren, Fan, Pearton, Stephen J., Ahn, Shihyun, Lin, Yi-Hsuan, Machuca, Francisco, Weiss, Robert, Welsh, Alex, McCartney, Martha R., Smith, David J., Kravchenko, Ivan I.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2016

Language:

english

File:

PDF, 952 KB

english, 2016

62

Valence and conduction band offsets in AZO/Ga 2 O 3 heterostructures

Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P., Pearton, S.J., Jang, Soohwan, Kuramata, Akito

Journal:

Year:

2017

Language:

english

File:

PDF, 954 KB

english, 2017

63

Energy band offsets of dielectrics on InGaZnO 4

Hays, David C., Gila, B. P., Pearton, S. J., Ren, F.

Journal:

Applied Physics Reviews

Year:

2017

Language:

english

File:

PDF, 3.34 MB

english, 2017

64

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 28 January 2017)] Gallium Nitride Materials and Devices XII - Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation)

Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Nanishi, Yasushi, Schwarz, Ulrich T., Shim, Jong-In, Ren, Fan, Pearton, Stephen J., Kang, Tsung Sheng, Cheney, David J., Gila, Brent P.

Year:

2017

Language:

english

File:

PDF, 116 KB

english, 2017

65

Band alignment of Al 2 O 3 with (−201) β-Ga 2 O 3

Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P., Pearton, S.J., Jang, Soohwan, Kuramata, Akito

Journal:

Year:

2017

Language:

english

File:

PDF, 1.58 MB

english, 2017

66

SPIE Proceedings [SPIE Microelectronic Manufacturing '99 - Santa Clara, CA (Wednesday 22 September 1999)] Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V - New optical sensor for real-time in-situ end point monitoring during dry etching of III-V ternary multistack layers

Liddane, Kevin J., Toprac, Anthony J., Dang, Kim, Benferhat, Ramdane, Lee, Jewon, Westerman, Russell J., Johnson, David J., Donohue, John, Sasserath, Jay N., Pearton, Stephen J.

Year:

1999

Language:

english

File:

PDF, 535 KB

english, 1999

67

Band offsets in HfSiO 4 /IGZO heterojunctions

Hays, David C., Gila, Brent P., Pearton, Stephen J., Ren, Fan

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 1.20 MB

english, 2015

68

Conduction and valence band offsets of LaAl 2 O 3 with (−201) β-Ga 2 O 3

Carey, Patrick H., Ren, Fan, Hays, David C., Gila, Brent P., Pearton, Stephen J., Jang, Soohwan, Kuramata, Akito

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2017

Language:

english

File:

PDF, 969 KB

english, 2017

69

Band offsets in ITO/Ga 2 O 3 heterostructures

Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P, Pearton, S.J., Jang, Soohwan, Kuramata, Akito

Journal:

Applied Surface Science

Year:

2017

Language:

english

File:

PDF, 1.06 MB

english, 2017

70

Band alignment of atomic layer deposited SiO 2 and HfSiO 4 with $(\bar{2}01)$ β-Ga 2 O 3

Carey, Patrick H., Ren, Fan, Hays, David C., Gila, Brent P., Pearton, Stephen J., Jang, Soohwan, Kuramata, Akito

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 944 KB

english, 2017

71

[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - Wide Bandgap Semiconductor Nanowires for Sensing Applications

Pearton, Steve, Norton, David, Ren, Fan, Tien, Li-Chia, Kang, Byoung Sam, Chi, G

Year:

2007

Language:

english

File:

PDF, 779 KB

english, 2007

72

Ohmic contacts on n-type β-Ga 2 O 3 using AZO/Ti/Au

Carey, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, Kravchenko, Ivan I.

Journal:

Year:

2017

Language:

english

File:

PDF, 2.31 MB

english, 2017

73

Improvement of Ohmic contacts on Ga 2 O 3 through use of ITO-interlayers

Carey, Patrick H., Yang, Jiancheng, Ren, Fan, Hays, David C., Pearton, Stephen J., Kuramata, Akito, Kravchenko, Ivan I.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2017

Language:

english

File:

PDF, 855 KB

english, 2017

74

AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

Ren, Fan, Pearton, Stephen J., Ahn, Shihyun, Lin, Yi-Hsuan, Machuca, Francisco, Weiss, Robert, Welsh, Alex, McCartney, Martha R., Smith, David J., Kravchenko, Ivan I.

Journal:

ECS Journal of Solid State Science and Technology

Year:

2017

Language:

english

File:

PDF, 457 KB

english, 2017

75

(Keynote) Advances in Ga 2 O 3 Processing and Devices

Yang, Jiancheng, Carey, Patrick, Ahn, Shihyun, Ren, Fan, Jang, Soohwan, Kim, Jihyun, Hays, David, Pearton, Stephen J., Kuramata, Akito

Journal:

ECS Transactions

Year:

2017

Language:

english

File:

PDF, 641 KB

english, 2017

76

Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

Kang, Byoung, Wang, Hung-Ta, Tien, Li- Chia, Ren, Fan, Gila, Brent, Norton, David, Abernathy, Cammy, Lin, Jenshan, Pearton, Stepehn

Journal:

Year:

2006

Language:

english

File:

PDF, 995 KB

english, 2006

77

Band Offsets for Atomic Layer Deposited HfSiO 4 on (Al 0.14 Ga 0.86 ) 2 O 3

Fares, Chaker, Ren, F., Lambers, Eric, Hays, David C., Gila, B. P., Pearton, S. J.

Journal:

ECS Journal of Solid State Science and Technology

Year:

2018

Language:

english

File:

PDF, 733 KB

english, 2018

78

Valence band offsets for CuI on (-201) bulk Ga 2 O 3 and epitaxial (010) (Al 0.14 Ga 0.86 ) 2 O 3

Fares, Chaker, Ren, F., Hays, David C., Gila, B. P., Tadjer, Marko, Hobart, Karl D., Pearton, S. J.

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 1.47 MB

english, 2018

79

Band alignment of atomic layer deposited SiO 2 on (010) (Al 0.14 Ga 0.86 ) 2 O 3

Fares, Chaker, Ren, F., Lambers, Eric, Hays, David C., Gila, B. P., Pearton, S. J.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2018

Language:

english

File:

PDF, 1.29 MB

english, 2018

80

Valence and Conduction Band Offsets for Sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3

Fares, Chaker, Ren, Fan, Lambers, Eric, Hays, David, Gila, Brent P, Pearton, Stephen J

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 876 KB

english, 2018

81

60 Co Gamma Ray Damage in Homoepitaxial β-Ga 2 O 3 Schottky Rectifiers

Yang, Jiancheng, Koller, Gregory J., Fares, Chaker, Ren, F., Pearton, S. J., Bae, Jinho, Kim, Jihyun, Smith, David J.

Journal:

ECS Journal of Solid State Science and Technology

Year:

2019

Language:

english

File:

PDF, 742 KB

english, 2019

82

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga 2 O 3

Tadjer, Marko J., Fares, Chaker, Mahadik, Nadeemullah A., Freitas, Jaime A., Smith, David, Sharma, Ribhu, Law, Mark E., Ren, Fan, Pearton, S. J., Kuramata, A.

Journal:

ECS Journal of Solid State Science and Technology

Year:

2019

Language:

english

File:

PDF, 1.31 MB

english, 2019

83

Defects at the surface of β-Ga 2 O 3 produced by Ar plasma exposure

Polyakov, A. Y., Lee, In-Hwan, Smirnov, N. B., Yakimov, E. B., Shchemerov, I. V., Chernykh, A. V., Kochkova, A. I., Vasilev, A. A., Carey, P. H., Ren, F., Smith, David J., Pearton, S. J.

Journal:

Year:

2019

File:

PDF, 3.04 MB

2019

84

Transdifferentiation of corneal epithelium: evidence for a linkage between the segregation of epidermal stem cells and the induction of hair follicles during embryogenesis.

Pearton, David J, Ferraris, Corinne, Dhouailly, Danielle

Journal:

The International Journal of Developmental Biology

Year:

2004

File:

PDF, 492 KB

2004

85

Changes in band alignment during annealing at 600âÂ°C of ALD Al 2 O 3 on (In x Ga 1âââx ) 2 O 3 for xâ=â0.25â0.74

Fares, Chaker, Xian, Minghan, Smith, David J., McCartney, Martha R., KneiÃ, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, Pearton, S. J.

Journal:

Journal of Applied Physics

Year:

2020

Language:

english

File:

PDF, 2.83 MB

english, 2020

86

Annealing Effects on the Band Alignment of ALD SiO 2 on (In x Ga 1âx ) 2 O 3 for x = 0.25â0.74

Fares, Chaker, Xian, Minghan, Smith, David J., McCartney, M. R., KneiÃ, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, Pearton, S. J.

Journal:

ECS Journal of Solid State Science and Technology

Year:

2020

File:

PDF, 1.75 MB

2020