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51

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Demonstration of 2D/3D p-MoS2/n-SiC junction

Lee, Edwin W., Ma, Lu, Nath, Digbijoy N., Lee, Choong Hee, Wu, Yiying, Rajan, Siddharth

Year:

2014

Language:

english

File:

PDF, 322 KB

english, 2014

52

[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors

Fang, Tian, Wang, Ronghua, Li, Guowang, Xing, Huili, Rajan, Siddharth, Jena, Debdeep

Year:

2011

Language:

english

File:

PDF, 2.47 MB

english, 2011

53

[IEEE 2008 66th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2008.06.23-2008.06.25)] 2008 Device Research Conference - Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

Wong, Man Hoi, Pei, Yi, Chu, Rongming, Rajan, Siddharth, Swenson, Brian L., Brown, David F., Keller, Stacia, DenBaars, Steven P., Speck, James S., Mishra, Umesh K.

Year:

2008

Language:

english

File:

PDF, 642 KB

english, 2008

54

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Electron transport in large-area epitaxial MoS2

Nath, Digbijoy N., Ma, Lu, Lee, Chong Hee, Lee, Edwin, Arehart, Aaron, Wu, Yiying, Rajan, Siddharth

Year:

2014

Language:

english

File:

PDF, 409 KB

english, 2014

55

[IEEE 2014 67th Annual Conference for Protective Relay Engineers - College Station, TX, USA (2014.03.31-2014.04.3)] 2014 67th Annual Conference for Protective Relay Engineers - Series-compensated line protection challenges in the CREZ region

Corpuz, Genardo, Koellner, Kristian, Bell, Jordan, Rajan, Siddharth, Somani, Amit, Thompson, Michael

Year:

2014

Language:

english

File:

PDF, 1.55 MB

english, 2014

56

[IEEE 2012 70th Annual Device Research Conference (DRC) - University Park, PA, USA (2012.06.18-2012.06.20)] 70th Device Research Conference - Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctions

Krishnamoorthy, Sriram, Akyol, Fatih, Yang, Jing, Park, Pil Sung, Myers, Roberto C, Rajan, Siddharth

Year:

2012

Language:

english

File:

PDF, 817 KB

english, 2012

57

[IEEE 2013 82nd ARFTG Microwave Measurement Conference - Columbus, OH, USA (2013.11.18-2013.11.21)] 82nd ARFTG Microwave Measurement Conference - Low frequency noise in chemical vapor deposited MoS2

Wang, Yuji, Luo, Xinhang, Zhang, Ningjiao, Laskar, Masihhur R., Ma, Lu, Wu, Yiying, Rajan, Siddharth, Lu, Wu

Year:

2013

Language:

english

File:

PDF, 771 KB

english, 2013

58

[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - Determination of trap energy levels in AlGaN/GaN HEMT

Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Year:

2013

Language:

english

File:

PDF, 1.01 MB

english, 2013

59

Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures

Ramesh, Prashanth, Krishnamoorthy, Sriram, Rajan, Siddharth, Washington, Gregory N.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.31 MB

english, 2014

60

Characterization of a dielectric/GaN system using atom probe tomography

Mazumder, Baishakhi, Esposto, Michele, Hung, Ting H., Mates, Tom, Rajan, Siddharth, Speck, James S.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.16 MB

english, 2013

61

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Esposto, Michele, Neelim Nath, Digbijoy, Sung Park, Pil, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.23 MB

english, 2013

62

Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3

Hung, Ting-Hsiang, Sasaki, Kohei, Kuramata, Akito, Nath, Digbijoy N., Sung Park, Pil, Polchinski, Craig, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 909 KB

english, 2014

63

Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress

Brown, David F., Rajan, Siddharth, Keller, Stacia, Hsieh, Yun-Hao, DenBaars, Steven P., Mishra, Umesh K.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 359 KB

english, 2008

64

Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

Hung, Ting-Hsiang, Esposto, Michele, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 808 KB

english, 2011

65

Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar In[sub x]Ga[sub 1−x]N

Nath, Digbijoy N., Gür, Emre, Ringel, Steven A., Rajan, Siddharth

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 1015 KB

english, 2011

66

Low resistance GaN/InGaN/GaN tunnel junctions

Krishnamoorthy, Sriram, Akyol, Fatih, Park, Pil Sung, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.02 MB

english, 2013

67

Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1

Ma, Lu, Nath, Digbijoy N., Lee, Edwin W., Lee, Choong Hee, Yu, Mingzhe, Arehart, Aaron, Rajan, Siddharth, Wu, Yiying

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.39 MB

english, 2014

68

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.18 MB

english, 2013

69

First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures

Mishra, Rohan, Restrepo, Oscar D., Rajan, Siddharth, Windl, Wolfgang

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 481 KB

english, 2011

70

Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN

Simon, John, Wang, Albert (Kejia), Xing, Huili, Rajan, Siddharth, Jena, Debdeep

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 527 KB

english, 2006

71

Gallium nitride electronics

Rajan, Siddharth, Jena, Debdeep

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 36 KB

english, 2013

72

[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - Interface charge engineering in GaN-based MIS-HEMTs

Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Nath, Digbijoy Neelim, Park, Pil Sung, Rajan, Siddharth

Year:

2013

Language:

english

File:

PDF, 1.52 MB

english, 2013

73

[IEEE 2008 66th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2008.06.23-2008.06.25)] 2008 Device Research Conference - Surface Passivation of AlGaN/GaN HEMTs

Rajan, Siddharth, Pei, Yi, Cheng, Zhen, DenBaars, Steven P., Mishra, Umesh K.

Year:

2008

Language:

english

File:

PDF, 801 KB

english, 2008

74

Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy

Fehlberg, Tamara B., Umana-Membreno, Gilberto A., Nener, Brett D., Parish, Giacinta, Gallinat, Chad S., Koblmüller, Gregor, Rajan, Siddharth, Bernardis, Sarah, Speck, James S.

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 165 KB

english, 2006

75

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

Bajaj, Sanyam, Hung, Ting-Hsiang, Akyol, Fatih, Nath, Digbijoy, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.29 MB

english, 2014

76

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

Akyol, Fatih, Nath, Digbijoy N., Gür, Emre, Park, Pil Sung, Rajan, Siddharth

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 585 KB

english, 2011

77

Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers

Simon, John, Wang, Kejia, Xing, Huili, Jena, Debdeep, Rajan, Siddharth

Journal:

MRS Proceedings

Year:

2005

Language:

english

File:

PDF, 205 KB

english, 2005

78

Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors

Yang, Zhichao, Nath, Digbijoy N., Zhang, Yuewei, Khurgin, Jacob B., Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

79

Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs

Park, Pil Sung, Krishnamoorthy, Sriram, Bajaj, Sanyam, Nath, Digbijoy N., Rajan, Siddharth

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.56 MB

english, 2015

80

Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN

Tamboli, Adele C., Schmidt, Mathew C., Rajan, Siddharth, Speck, James S., Mishra, Umesh K., DenBaars, Steven P., Hu, Evelyn L.

Journal:

Journal of The Electrochemical Society

Year:

2009

Language:

english

File:

PDF, 679 KB

english, 2009

81

Enhancement-Mode m -plane AlGaN/GaN Heterojunction Field-Effect Transistors

Fujiwara, Tetsuya, Rajan, Siddharth, Keller, Stacia, Higashiwaki, Masataka, Speck, James S., DenBaars, Steven P., Mishra, Umesh K.

Journal:

Applied Physics Express

Year:

2009

Language:

english

File:

PDF, 332 KB

english, 2009

82

Electrical characterization of low defect density nonpolar (11¯20) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)

Imer, Bilge, Haskell, Benjamin, Rajan, Siddharth, Keller, Stacia, Mishra, Umesh K., Nakamura, Shuji, Speck, James S., DenBaars, Steven P.

Journal:

Journal of Materials Research

Year:

2008

Language:

english

File:

PDF, 310 KB

english, 2008

83

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

RAJAN, SIDDHARTH, MISHRA, UMESH K., PALACIOS, TOMÁS

Journal:

International Journal of High Speed Electronics and Systems

Year:

2008

Language:

english

File:

PDF, 405 KB

english, 2008

84

SPIE Proceedings [SPIE SPIE NanoScience + Engineering - San Diego, California, USA (Sunday 12 August 2012)] Nanoepitaxy: Materials and Devices IV - Graded nanowire ultraviolet LEDs by polarization engineering

Carnevale, Santino D., Kent, Thomas F., Phillips, Patrick J., Sarwar, A.T.M. Golam, Klie, Robert F., Rajan, Siddharth, Myers, Roberto C., Kobayashi, Nobuhiko P., Talin, A. Alec, Islam, M. Saif

Year:

2012

Language:

english

File:

PDF, 1.25 MB

english, 2012

85

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - III-nitride tunnel junctions for efficient solid state lighting

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Krishnamoorthy, Sriram, Akyol, Fatih, Rajan, Siddharth

Year:

2014

Language:

english

File:

PDF, 778 KB

english, 2014

86

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Krishnamoorthy, Sriram, Akyol, Fatih, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.46 MB

english, 2014

87

Negative differential resistance in GaN tunneling hot electron transistors

Yang, Zhichao, Nath, Digbijoy, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.08 MB

english, 2014

88

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

Raman, Ajay, Dasgupta, Sansaptak, Rajan, Siddharth, Speck, James S., Mishra, Umesh K.

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 307 KB

english, 2008

89

Interband tunneling for hole injection in III-nitride ultraviolet emitters

Zhang, Yuewei, Krishnamoorthy, Sriram, Johnson, Jared M., Akyol, Fatih, Allerman, Andrew, Moseley, Michael W., Armstrong, Andrew, Hwang, Jinwoo, Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 2.23 MB

english, 2015

90

GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions

Akyol, Fatih, Krishnamoorthy, Sriram, Zhang, Yuewei, Rajan, Siddharth

Journal:

Applied Physics Express

Year:

2015

Language:

english

File:

PDF, 4.38 MB

english, 2015

91

Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

Yang, Zhichao, Zhang, Yuewei, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 652 KB

english, 2015

92

[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors

Yang, Zhichao, Zhang, Yuewei, Krishnamoorthy, Sriram, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

93

SPIE Proceedings [SPIE SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring - San Diego, CA (Sunday 7 March 2010)] Active and Passive Smart Structures and Integrated Systems 2010 - Distributed intelligence using gallium nitride based active devices

Ramesh, Prashanth, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Washington, Gregory N., Ghasemi-Nejhad, Mehrdad N.

Year:

2010

Language:

english

File:

PDF, 642 KB

english, 2010

94

[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs

Bajaj, Sanyam, Shoron, Omor F, Park, Pil Sung, Krishnamoorthy, Sriram, Akyol, Fatih, Hung, Ting-Hsiang, Reza, Shahed, Chumbes, Eduardo M, Khurgin, Jacob B, Rajan, Siddharth

Year:

2015

Language:

english

File:

PDF, 716 KB

english, 2015

95

[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - Sub 300 nm wavelength III-Nitride tunnel-injected ultraviolet LEDs

Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Khandaker, Sadia, Allerman, Andrew, Moseley, Michael W., Armstrong, Andrew, Rajan, Siddharth

Year:

2015

Language:

english

File:

PDF, 904 KB

english, 2015

96

[IEEE 2015 IEEE International Symposium on Antennas and Propagation & USNC/URSI National Radio Science Meeting - Vancouver, BC, Canada (2015.7.19-2015.7.24)] 2015 IEEE International Symposium on Antennas and Propagation & USNC/URSI National Radio Science Meeting - Room temperature detection of plasma resonances using multiple 2DEG channels in HEMT

Bhardwaj, Shubhendu, Rajan, Siddharth, Volakis, John L.

Year:

2015

Language:

english

File:

PDF, 371 KB

english, 2015

97

“Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]”

Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 352 KB

english, 2012

98

[ASME ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems - Scottsdale, Arizona, USA (September 18–21, 2011)] ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems, Volume 1 - Fabrication and Characterization of Gallium Nitride Unimorphs for Optical MEMS Applications

Ramesh, Prashanth, Washington, Gregory N., Krishnamoorthy, Sriram, Rajan, Siddharth

Year:

2011

Language:

english

File:

PDF, 1.42 MB

english, 2011

99

[IEEE 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Blacksburg, VA, USA (2015.11.2-2015.11.4)] 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Power switching transistors based on GaN and AlGaN channels

Bajaj, Sanyam, Hung, Ting-Hsiang, Akyol, Fatih, Krishnamoorthy, Sriram, Khandaker, Sadia, Armstrong, Andrew, Allerman, Andrew, Rajan, Siddharth

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

100

Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic Model

Bhardwaj, Shubhendu, Nahar, Niru K., Rajan, Siddharth, Volakis, John L.

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.75 MB

english, 2016