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51

GaAs Electron Spectrum with Antisite AsGa Defect Clusters in the Semiempirical Tight-Binding Method

V. A. Chaldyshev, A. V. Pomogaeva

Journal:

Russian Physics Journal

Year:

2000

Language:

english

File:

PDF, 66 KB

english, 2000

52

Resonant optical reflection by periodic systems of the GaAs/AlGaAs quantum well excitons

V. V. Chaldyshev, E. V. Kundelev, Yuechao Chen, A. N. Poddubny, A. P. Vasil'ev, Zhiheng Liu

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 240 KB

english, 2012

53

Characters of the irreducible nonequivalent loaded corepresentations of some point groups

N. V. Kudryavtseva, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1968

Language:

english

File:

PDF, 418 KB

english, 1968

54

The energy spectrum of electrons in a crystal

N. V. Kudryavtseva, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1966

Language:

english

File:

PDF, 407 KB

english, 1966

55

Energy spectra of electrons in crystals

N. V. Kudryavtseva, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1965

Language:

english

File:

PDF, 331 KB

english, 1965

56

Energy-band structure of semiconductors having the chalcopyrite lattice II. MgSiP2, ZnGeP2, ZnSiAs2, and CdSiP2

A. S. Poplavnoi, Yu. I. Polygalov, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1970

Language:

english

File:

PDF, 357 KB

english, 1970

57

Energy-band structure of semiconductors having the chalcopyrite lattice

A. S. Poplavnoi, Yu. I. Polygalov, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1969

Language:

english

File:

PDF, 503 KB

english, 1969

58

Energy spectra of electrons in crystals part 6. Associated corepresentations

N. V. Kudryavtseva, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1965

Language:

english

File:

PDF, 396 KB

english, 1965

59

Optical properties of cubic K3Sb

V. A. Chaldyshev, V. P. Kiselev, A. I. Klimin, V. V. Konev

Journal:

Russian Physics Journal

Year:

1979

Language:

english

File:

PDF, 488 KB

english, 1979

60

Calculation of photoemission characteristics of cubic K3Sb

V. P. Kiselev, V. V. Konev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1980

Language:

english

File:

PDF, 310 KB

english, 1980

61

Group-theoretic analysis of the electron spectrum of semiconductors with a famatinite lattice

A. M. Ratner, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1973

Language:

english

File:

PDF, 473 KB

english, 1973

62

Calculation of the band structure of GaN and InN using the pseudopotential method

S. N. Grinyaev, V. Ya. Malakhov, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1986

Language:

english

File:

PDF, 362 KB

english, 1986

63

Band structure and optical properties of II-IV-V compounds

N. A. Zakharov, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1986

Language:

english

File:

PDF, 1.63 MB

english, 1986

64

Calculation of electronic spectra of AIIIBVcompounds and solid solutions using model pseudopotentials

V. A. Chaldyshev, S. N. Grinyaev

Journal:

Russian Physics Journal

Year:

1983

Language:

english

File:

PDF, 1.59 MB

english, 1983

65

Energy structure of Al1−xGaxAs and Al1−xGaxSb in the coherent potential approximation

S. N. Grinyaev, S. G. Kataev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1986

Language:

english

File:

PDF, 449 KB

english, 1986

66

Application of a complex band structure to compute the surface states by the Green's function method

V. A. Chaldyshev, V. N. Chernyshov, V. A. Goryunov

Journal:

Russian Physics Journal

Year:

1975

Language:

english

File:

PDF, 385 KB

english, 1975

67

Electron scattering in photoemission

V. V. Konev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1980

Language:

english

File:

PDF, 288 KB

english, 1980

68

Transport of nonequilibrium electrons in photoemission from semibounded medium

V. V. Konev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1987

Language:

english

File:

PDF, 384 KB

english, 1987

69

Secondary electron transport in photoemission from films

V. P. Kiselev, V. V. Konev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1985

Language:

english

File:

PDF, 368 KB

english, 1985

70

Photoelectron emission from semiconductors with low valence band dispersion

V. V. Konev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1982

Language:

english

File:

PDF, 384 KB

english, 1982

71

The change in the width of the forbidden band during polymorphic transformations in AIIBIVC2Vcompounds

V. V. Aksenov, V. M. Petrov, Yu. I. Polygalov, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1972

Language:

english

File:

PDF, 337 KB

english, 1972

72

Transport of photoexcited electrons in films

V. P. Kiselev, V. V. Konev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1985

Language:

english

File:

PDF, 429 KB

english, 1985

73

Account of the nonbinary nature of the ion interaction in lattice dynamics

V. G. Tyuterev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1970

Language:

english

File:

PDF, 287 KB

english, 1970

74

Energy spectra of electrons in a crystal

N. V. Kudryavtseva, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1966

Language:

english

File:

PDF, 397 KB

english, 1966

75

Calculation of the band structure of gallium arsenide by the pseudo-potential method

A. S. Poplavnoi, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1966

Language:

english

File:

PDF, 162 KB

english, 1966

76

Energy structure of narrow-band solid solutions of III-V compounds containing Tl and Bi

S. N. Grinyaev, A. V. Nyavro, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1985

Language:

english

File:

PDF, 418 KB

english, 1985

77

Abstracts of papers deposited at VINITI

V. M. Lisitsyn, V. I. Korepanov, E. V. Borovko, Yu. A. Dobrozhanskii, V. A. Presnov, V. A. Chaldyshev, V. N. Chernyshov, V. V. Gorlach, V. V. Svishchenko, G. V. Maier, I. N. Anokhina, V. E. Egorushkin

Journal:

Russian Physics Journal

Year:

1975

Language:

english

File:

PDF, 257 KB

english, 1975

78

Energy-band structure of semiconductors having the chalcopyrite lattice

A. S. Poplavnoi, Yu. I. Polygalov, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1970

Language:

english

File:

PDF, 367 KB

english, 1970

79

Investigation of deep levels of AsGaand GaAsantistructural defects and InAsand SbGaheteroantistructural defects in GaAs using a 4×4×4 expanded unit cell technique

S. N. Grinyaev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1996

Language:

english

File:

PDF, 547 KB

english, 1996

80

Experimental evaluation of the carrier lifetime in GaAs grown at low temperature

Pastor, A. A., Serdobintsev, P. Yu., Chaldyshev, V. V.

Journal:

Year:

2012

Language:

english

File:

PDF, 170 KB

english, 2012

81

Model pseudopotentials: Calculation of the band structure and optical properties of a CsI crystal

S. G. Kataev, A. V. Nyavro, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1990

Language:

english

File:

PDF, 325 KB

english, 1990

82

Optical properties of cubic K3Sb: Dependence of theoretical electron spectra and dielectric function on the pseudopotential parameters

V. P. Kiselev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1989

Language:

english

File:

PDF, 467 KB

english, 1989

83

Band structure of semiconductors with a famatinite lattice

A. M. Ratner, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1973

Language:

english

File:

PDF, 382 KB

english, 1973

84

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers

Baidakova, M. V., Bert, N. A., Chaldyshev, V.V., Nevedomsky, V. N., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Acta Crystallographica Section B Structural Science

Year:

2013

Language:

english

File:

PDF, 276 KB

english, 2013

85

Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells

Chaldyshev, V. V., Kundelev, E. V., Nikitina, E. V., Egorov, A. Yu., Gorbatsevich, A. A.

Journal:

Year:

2012

Language:

english

File:

PDF, 185 KB

english, 2012

86

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Cherkashin, N., Reboh, S., Hÿtch, M. J., Claverie, A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Chaldyshev, V. V.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 2.66 MB

english, 2013

87

Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state

Chaldyshev, V. V., Chen, Yuechao, Poddubny, A. N., Vasilâev, A. P., Liu, Zhiheng

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 414 KB

english, 2011

88

Optical lattices of InGaN quantum well excitons

Chaldyshev, V. V., Bolshakov, A. S., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F., Yagovkina, M. A., Kim, Taek, Park, Youngsoo

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 773 KB

english, 2011

89

Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

Pastor, A. A., Prokhorova, U. V., Serdobintsev, P. Yu., Chaldyshev, V. V., Yagovkina, M. A.

Journal:

Year:

2013

Language:

english

File:

PDF, 263 KB

english, 2013

90

Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions

P. V. Lukin, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato…

Journal:

Year:

2012

Language:

english

File:

PDF, 243 KB

english, 2012

91

Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier

Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Year:

2013

Language:

english

File:

PDF, 1.43 MB

english, 2013

92

Resonance Bragg structure with double InGaN quantum wells

Bol’shakov, A. S., Chaldyshev, V. V., Zavarin, E. E., Sakharov, A. V., Lundin, V. V., Tsatsul’nikov, A. F., Yagovkina, M. A.

Journal:

Physics of the Solid State

Year:

2013

Language:

english

File:

PDF, 245 KB

english, 2013

93

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers

Baidakova, M. V., Bert, N. A., Chaldyshev, V.V., Nevedomsky, V. N., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials

Year:

2013

Language:

english

File:

PDF, 305 KB

english, 2013

94

[IEEE IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO - London, UK (24-25 Nov. 1997)] IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) - Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping

Chaldyshev, V.V., Bert, N.A., Faleev, N.N., Kunitsyn, A.E., Musikhin, Yu.G., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.

Year:

1997

Language:

english

File:

PDF, 754 KB

english, 1997

95

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Formation of complexes of quantum dots InAs and nanoclusters as in matrix GaAs by molecular beam epitaxy

Zaichenko, Alexander A., Semyagin, B. R., Preobrazhenskii, V. V., Putyato, M. A., Nevedomskii, V. N., Chaldyshev, V. V., Bert, N. A.

Year:

2011

Language:

english

File:

PDF, 201 KB

english, 2011

96

[IEEE 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI - Canberra, ACT, Australia (3-7 July 2000)] 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) - Enhanced intermixing in anion and cation sublattices of low-temperature grown GaAs

Chaldyshev, V.V., Bert, N.A., Musikhin, Yu.G., Suvorova, A.A., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.

Year:

2000

Language:

english

File:

PDF, 244 KB

english, 2000

97

[IEEE 10th International Semiconducting and Insulating Materials - Berkeley, CA, USA (1-5 June 1998)] Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) - LT GaAs delta-doped with In: enhanced As excess, In-Ga intermixing, As cluster array ordering

Bert, N.A., Chaldyshev, V.V., Suvorova, A.A., Faleev, N.N., Kunitsyn, A.E., Musikhin, Yu.G., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.

Year:

1998

Language:

english

File:

PDF, 313 KB

english, 1998

98

Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix

V. I. Ushanov,V. V. Chaldyshev,V. V. Preobrazhenskii,M. A. Putyato…

Journal:

Year:

2013

Language:

english

File:

PDF, 221 KB

english, 2013

99

Zinc blende GaAs films grown on wurtzite GaN∕sapphire templates

Chaldyshev, V. V., Nielsen, B., Mendez, E. E., Musikhin, Yu. G., Bert, N. A., Ma, Zh., Holden, Todd

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 389 KB

english, 2005

100

Bistability of charge accumulated in low-temperature-grown GaAs

Brounkov, P. N., Chaldyshev, V. V., Suvorova, A. A., Bert, N. A., Konnikov, S. G., Chernigovskii, A. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 341 KB

english, 1998

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