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1

1,000,000 cases of COVID-19 outside of China: The date predicted by a simple heuristic

Koczkodaj, W.W., Mansournia, M.A., Pedrycz, W., Wolny-Dominiak, A., Zabrodskii, P.F., StrzaÅ¡ka, D., Armstrong, T., Zolfaghari, A.H., Debski, M., Mazurek, J.

Journal:

Global Epidemiology

Year:

2020

Language:

english

File:

PDF, 629 KB

english, 2020

2

A model of ionization equilibrium and Mott transition in boron doped crystalline diamond

N. A. Poklonski, S. A. Vyrko, O. N. Poklonskaya, A. G. Zabrodskii

Journal:

physica status solidi (b)

Year:

2009

Language:

english

File:

PDF, 1.11 MB

english, 2009

3

Coulomb gap and metal–insulator transitions in doped semiconductors

Zabrodskii, Andrei G

Journal:

Physics Uspekhi

Year:

1998

Language:

english

File:

PDF, 1.44 MB

english, 1998

4

Development of silicon detectors for Beam Loss Monitoring at HL-LHC

Verbitskaya, E., Eremin, V., Zabrodskii, A., Bogdanov, A., Shepelev, A., Dehning, B., Bartosik, M.R., Alexopoulos, A., Glaser, M., Ravotti, F., Sapinski, M., Härkönen, J., Egorov, N., Galkin, A.

Journal:

Journal of Instrumentation

Year:

2017

Language:

english

File:

PDF, 3.39 MB

english, 2017

5

The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskiĭ

Journal:

Year:

2006

Language:

english

File:

PDF, 302 KB

english, 2006

6

Coulomb gap, its critical behavior, and the metal-insulator transition in doped semiconductors

Andrei G. Zabrodskii

Journal:

Czechoslovak Journal of Physics

Year:

1996

Language:

english

File:

PDF, 180 KB

english, 1996

7

A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors

Poklonski, N. A., Vyrko, S. A., Kovalev, A. I., Zabrodskii, A. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 471 KB

english, 2016

8

Model of hopping dc conductivity via nearest neighbor boron atoms in moderately compensated diamond crystals

N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii

Journal:

Solid State Communications

Year:

2009

Language:

english

File:

PDF, 1.07 MB

english, 2009

9

Immunotoxic effects during acute ethylene glycol poisoning

P. F. Zabrodskii, V. G. Germanchuk

Journal:

Bulletin of Experimental Biology and Medicine

Year:

2000

Language:

english

File:

PDF, 193 KB

english, 2000

10

A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge: Ga

N. A. Poklonskii, S. Yu. Lopatin, A. G. Zabrodskii

Journal:

Physics of the Solid State

Year:

2000

Language:

english

File:

PDF, 116 KB

english, 2000

11

Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level

M. V. Alekseenko, A. G. Zabrodskii, L. M. Shterengas

Journal:

Year:

1998

Language:

english

File:

PDF, 163 KB

english, 1998

12

Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga

N. A. Poklonskii, S. A. Vyrko, A. G. Zabrodskii, S. V. Egorov

Journal:

Physics of the Solid State

Year:

2003

Language:

english

File:

PDF, 106 KB

english, 2003

13

Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Journal:

Physics of the Solid State

Year:

2004

Language:

english

File:

PDF, 85 KB

english, 2004

14

Fluctuation model of the high-frequency hopping electrical conductivity of moderately compensated semiconductors with hydrogenic impurities

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Journal:

Physics of the Solid State

Year:

2005

Language:

english

File:

PDF, 120 KB

english, 2005

15

Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example ofp-Si:B)

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Journal:

Year:

2007

Language:

english

File:

PDF, 253 KB

english, 2007

16

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

N. A. Poklonski, S. A. Vyrko, A. G. Zabrodskii

Journal:

Year:

2007

Language:

english

File:

PDF, 266 KB

english, 2007

17

Low-temperature variation of magnetic order in a nonmagneticn-Ge:As semiconductor in the vicinity of the metal-insulator phase transition

A. I. Veinger, A. G. Zabrodskii…

Journal:

Journal of Experimental and Theoretical Physics

Year:

2013

Language:

english

File:

PDF, 199 KB

english, 2013

18

Formation of an antiferromagnetic phase in highly doped 4H–SiC

Tisnek, T.V., Veinger, A.I., Zabrodskii, A.G., Mokhov, E.N.

Journal:

Diamond and Related Materials

Year:

2005

Language:

english

File:

PDF, 121 KB

english, 2005

19

Quasiclassical description of the nearest-neighbor hopping dc conduction via hydrogen-like donors in intermediately compensated GaAs crystals

Poklonski, N A, Vyrko, S A, Zabrodskii, A G

Journal:

Semiconductor Science and Technology

Year:

2010

Language:

english

File:

PDF, 234 KB

english, 2010

20

Transition temperature from band to hopping direct current conduction in crystalline semiconductors with hydrogen-like impurities: Heat versus Coulomb attraction

Poklonski, N. A., Vyrko, S. A., Poklonskaya, O. N., Zabrodskii, A. G.

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 612 KB

english, 2011

21

Scientists' contribution to the Great Victory in WWII on the example of the Leningrad (now A F Ioffe) Physical Technical Institute

Zabrodskii, Andrei G.

Journal:

Uspekhi Fizicheskih Nauk

Year:

2013

Language:

english

File:

PDF, 842 KB

english, 2013

22

AIP Conference Proceedings [AIP Publishing LLC INTERNATIONAL CONFERENCE ON ANALYSIS AND APPLIED MATHEMATICS (ICAAM 2014) - Shymkent, Kazakhstan (11–13 September 2014)] - Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I., Semenikhin, P. V.

Year:

2014

Language:

english

File:

PDF, 264 KB

english, 2014

23

Operational voltage of silicon heavily irradiated strip detectors utilizing avalanche multiplication effect

Verbitskaya, E, Eremin, V, Zabrodskii, A

Journal:

Journal of Instrumentation

Year:

2012

Language:

english

File:

PDF, 849 KB

english, 2012

24

Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example ofp-Ge:Ga)

Poklonski, N. A., Vyrko, S. A., Poklonskaya, O. N., Zabrodskii, A. G.

Journal:

Year:

2016

Language:

english

File:

PDF, 494 KB

english, 2016

25

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

Poklonski, N. A., Vyrko, S. A., Poklonskaya, O. N., Kovalev, A. I., Zabrodskii, A. G.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 638 KB

english, 2016

26

Absorption of the laser radiation by the laser plasma with gas microjet targets

Borisevichus, D. A., Zabrodskii, V. V., Kalmykov, S. G., Sasin, M. E., Seisyan, R. P.

Journal:

Technical Physics Letters

Year:

2017

Language:

english

File:

PDF, 482 KB

english, 2017

27

Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization

Verbitskaya, E., Eremin, V, Zabrodskii, A., Luukka, P.

Journal:

Journal of Instrumentation

Year:

2016

Language:

english

File:

PDF, 1.57 MB

english, 2016

28

Silicon Light-Emitting Diodes with Luminescence from (113) Defects

Kalyadin, A. E., Shtelâmakh, K. F., Aruev, P. N., Zabrodskii, V. V., Karabeshkin, K. V., Shek, E. I., Sobolev, N. A.

Journal:

Year:

2020

File:

PDF, 369 KB

2020

29

Thermopower of Neutron Transmutation-Doped Ge:Ga in the Hopping Region

A. G. Andreev, A. G. Zabrodskii, S. V. Egorov, I. P. Zvyagin

Journal:

physica status solidi (b)

Year:

1998

Language:

english

File:

PDF, 170 KB

english, 1998

30

Coulomb Gap and the Metal–Insulator Transition

A. G. Zabrodskii, A. G. Andreev, S. V. Egorov

Journal:

physica status solidi (b)

Year:

1998

Language:

english

File:

PDF, 233 KB

english, 1998

31

Hysteresis of the Variable Range Hopping Magnetoresistance in the Moderately Compensated p-type Ge

A.G. Andreev, A.V. Chernyaev, S.V. Egorov, R.V. Parfeniev, A.G. Zabrodskii

Journal:

physica status solidi (b)

Year:

2000

Language:

english

File:

PDF, 119 KB

english, 2000

32

Peculiarities of the Microwave Magnetoresistanc of Compensated Ge:As near the Metal--Insulator Transition

A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek

Journal:

physica status solidi (b)

Year:

2000

Language:

english

File:

PDF, 142 KB

english, 2000

33

EPR Spectra on Metal–Insulator Transitions in Compensated Ge:As

A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek

Journal:

physica status solidi (b)

Year:

2000

Language:

english

File:

PDF, 115 KB

english, 2000

34

Base Peculiarities of the Electron Spin Resonance in the Vicinity of Insulator–Metal Transition in 4H-SiC

A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek, E.N. Mokhov

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 76 KB

english, 2002

35

Anomalous Positive Microwave Magnetoresistance of Compensated Ge:Ga near the Metal–Insulator Transition

A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 93 KB

english, 2002

36

Lattice distortion (Peierls Transition) caused by spin interaction in the chaotic impurity system of a semiconductor

A. Zabrodskii, A. Veinger, T. Tisnek, S. Goloshchapov

Journal:

Annalen der Physik

Year:

2009

Language:

english

File:

PDF, 131 KB

english, 2009

37

Angular and temperature-related specific features of averaging of hole effective masses in p-Ge at low temperatures

T. Tisnek, A. Veinger, A. Zabrodskii, S. Goloshchapov

Journal:

Annalen der Physik

Year:

2009

Language:

english

File:

PDF, 133 KB

english, 2009

38

The impact of neutral base region on the collected charge in heavily irradiated silicon detectors

E. Verbitskaya, V. Eremin, A. Zabrodskii, Z. Li, J. Härkönen

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2010

Language:

english

File:

PDF, 367 KB

english, 2010

39

Spin-Peierls transition in the Ge:As semiconductor impurity system in the vicinity of the insulator–metal phase transition

A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek, S.I. Goloshchapov

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 176 KB

english, 2009

40

Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors

A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek, S.I. Goloshchapov

Journal:

Solid State Communications

Year:

2005

Language:

english

File:

PDF, 95 KB

english, 2005

41

Peculiarities of the quantum magnetoresistance effects in a heavily doped semiconductor at the microwave frequencies

A.I. Veinger, A.G. Zabrodskii, T.V. Tisnek, G. Biskupski

Journal:

Solid State Communications

Year:

1998

Language:

english

File:

PDF, 373 KB

english, 1998

42

Alloy fluctuations in Si1−xGex crystals

G. Kocher, W. Jantsch, N. Abrosimov, S. Egorov, A. Zabrodskii, B. Andreev, H.G. Grimmeiss

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 96 KB

english, 2001

43

Dramatic electron paramagnetic resonance change in compensated Ge : As at the metal–insulator transition

A.I Veinger, A.G Zabrodskii, T.V Tisnek

Journal:

Physica B: Condensed Matter

Year:

2000

Language:

english

File:

PDF, 64 KB

english, 2000

44

White X-ray beam topography and radiography of Si1–xGex crystals bonded to silicon

T. S. Argunova, J. M. Yi, J. W. Jung, J. H. Je, L. M. Sorokin, M. Yu. Gutkin, E. I. Belyakova, L. S. Kostina, A. G. Zabrodskii, N. V. Abrosimov

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 664 KB

english, 2007

45

Magnetic ordering in doped semiconductors near the metal–insulator transition

A. G. Zabrodskii

Journal:

physica status solidi (b)

Year:

2004

Language:

english

File:

PDF, 244 KB

english, 2004

46

Antiferromagnetic spin glass ordering in the compensated n-Ge near the insulator–metal transition

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 153 KB

english, 2004

47

Interference quantum corrections in the low temperature microwave magnetoresistance of the nondegenerate Ge

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 143 KB

english, 2006

48

Antiferromagnetic phase in doped semiconductors near the insulator–metal phase transition

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov, E. N. Mokhov

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 212 KB

english, 2006

49

Nanostructured antiferromagnetic spin glass in doped Ge near the insulator–metal transition

A. G. Zabrodskii, A. I. Veinger, T. V. Tisnek, S. I. Goloshchapov

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 315 KB

english, 2008

50

Specific features of the low-temperature microwave magnetoresistance in nondegenerate p-Ge

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov

Journal:

physica status solidi (c)

Year:

2008

Language:

english

File:

PDF, 246 KB

english, 2008

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