Volume 58; Issue 6

Journal of Applied Physics

Volume 58; Issue 6
3

Ga‐As liquidus at temperatures below 650 °C

Year:
1985
Language:
english
File:
PDF, 499 KB
english, 1985
4

Supershallow levels in indium-doped silicon

Year:
1985
Language:
english
File:
PDF, 583 KB
english, 1985
5

Raman scattering study of rapid thermal annealing of As+-implanted Si

Year:
1985
Language:
english
File:
PDF, 729 KB
english, 1985
9

Existence of deep acceptors in Ga- and B-implanted GaAs after close-contact annealing

Year:
1985
Language:
english
File:
PDF, 686 KB
english, 1985
10

Improvement of critical current uniformity in lead-alloy Josephson junctions

Year:
1985
Language:
english
File:
PDF, 720 KB
english, 1985
17

Measurement of optical absorption in epitaxial semiconductor layers by a photovoltage method

Year:
1985
Language:
english
File:
PDF, 942 KB
english, 1985
19

Light ion beam transport in plasma channels

Year:
1985
Language:
english
File:
PDF, 953 KB
english, 1985
20

Uncoupled Helmholtz resonator: An open photoacoustic cell

Year:
1985
Language:
english
File:
PDF, 535 KB
english, 1985
21

High responsivity HgCdTe heterojunction photoconductor

Year:
1985
Language:
english
File:
PDF, 1.09 MB
english, 1985
22

Wiggle plane focusing in linear wigglers

Year:
1985
Language:
english
File:
PDF, 842 KB
english, 1985
23

Growth of crystalline zirconium dioxide films on silicon

Year:
1985
Language:
english
File:
PDF, 457 KB
english, 1985
25

Hot electrons in one dimension

Year:
1985
Language:
english
File:
PDF, 942 KB
english, 1985
29

Time-dependent quantum-well and finite-superlattice tunneling

Year:
1985
Language:
english
File:
PDF, 608 KB
english, 1985
30

Propagation of nonlocal elastic waves in a cylindrical hole containing a fluid

Year:
1985
Language:
english
File:
PDF, 606 KB
english, 1985
32

Dynamic model of trapping-detrapping in SiO2

Year:
1985
Language:
english
File:
PDF, 1.10 MB
english, 1985
34

Free electron density measurements by IR absorption in CdS

Year:
1985
Language:
english
File:
PDF, 546 KB
english, 1985
37

Method of ion reaction time amplification in time-of-flight mass and energy analysis

Year:
1985
Language:
english
File:
PDF, 444 KB
english, 1985
38

Molecular beam epitaxial growth of GaAs on Si(211)

Year:
1985
Language:
english
File:
PDF, 1.06 MB
english, 1985