Volume 71; Issue 9

Main
Journal of Applied Physics
Volume 71; Issue 9

Journal of Applied Physics

Volume 71; Issue 9

1

Simulation of the gas‐phase processes in remote‐plasma‐activated chemical‐vapor deposition of silicon dielectrics using rare gas–silane‐ammonia mixtures

Kushner, Mark J.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 2.30 MB

english, 1992

2

Admittance spectroscopy of CuInSe2/CdS solar cells prepared by chemical spray pyrolysis

Strifler, W. A., Bates, C. W.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.01 MB

english, 1992

3

Theoretical study of the influence of doping concentration on the performance of polycrystalline silicon solar cells

Bhatt, D. P., Joshi, D. P.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.17 MB

english, 1992

4

Rapid thermal annealing of sol‐gel derived lead zirconate titanate thin films

Chen, J., Udayakumar, K. R., Brooks, K. G., Cross, L. E.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 837 KB

english, 1992

5

Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2 interface

Aberle, Armin G., Glunz, Stefan, Warta, Wilhelm

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.31 MB

english, 1992

6

Gas flow dynamics in laser ablation deposition

Kools, J. C. S., Baller, T. S., De Zwart, S. T., Dieleman, J.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.41 MB

english, 1992

7

Effective dielectric and elastic constants of piezoelectric polycrystals

Olson, Tamara, Avellaneda, Marco

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.21 MB

english, 1992

8

Optical studies of PdO thin films

Remillard, J. T., Weber, W. H., McBride, J. R., Soltis, R. E.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.13 MB

english, 1992

9

Ga adatom incorporation kinetics at steps on vicinal GaAs (001) surfaces during growth of GaAs by molecular beam epitaxy

Shitara, T., Zhang, J., Neave, J. H., Joyce, B. A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 879 KB

english, 1992

10

Low threshold current and high differential gain in ideal tensile- and compressive-strained quantum-well lasers

Ghiti, A., Silver, M., O’Reilly, E. P.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 595 KB

english, 1992

11

Excitonic line broadening in bulk grown Cd1−xZnxTe

Oettinger, K., Hofmann, D. M., Efros, Al. L., Meyer, B. K., Salk, M., Benz, K. W.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 566 KB

english, 1992

12

Solution of the vector wave equation using Green’s function techniques

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 812 KB

english, 1992

13

New breakdown modes of the multipacting discharge

Gilardini, Aldo L.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 482 KB

english, 1992

14

Structure, magnetization, and thermal stability of (100) FeCu films deposited on Pd/Cu/Si(100)

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.04 MB

english, 1992

15

Oxide reliability criterion for the evaluation of the endurance performance of electrically erasable programmable read only memories

Papadas, C., Ghibaudo, G., Pananakakis, G., Riva, C., Mortini, P.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 803 KB

english, 1992

16

Numerical simulation of 3-level charge pumping

Ancona, M. G., Saks, N. S.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.06 MB

english, 1992

17

Passivation of copper by silicide formation in dilute silane

Hymes, S., Murarka, S. P., Shepard, C., Lanford, W. A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 542 KB

english, 1992

18

On single-photon ultraviolet ablation of polymeric materials

Cain, Stephen R., Burns, F. C., Otis, C. E.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.43 MB

english, 1992

19

Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy

Olego, D. J., Tamura, M., Okuno, Y., Kawano, T., Hashimoto, A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 745 KB

english, 1992

20

A possible mechanism for the recrystallization of InSb film on mica substrates

Isai, Masaaki, Yasuda, Shun-ichi, Ogita, Masami, Tanaka, Ikuo

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 658 KB

english, 1992

21

The influence of electrode areas on radio frequency glow discharge

Kasper, W., Böhm, H., Hirschauer, B.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 811 KB

english, 1992

22

Emission spectroscopy on a supersonically expanding argon/silane plasma

Meeusen, G. J., Ershov-Pavlov, E. A., Meulenbroeks, R. F. G., van de Sanden, M. C. M., Schram, D. C.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.26 MB

english, 1992

23

Regrowth of a GaAs layer for n-GaAs ohmic contacts

Li, Baoqi, Holloway, Paul H.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 843 KB

english, 1992

24

Thermal conductivity of thermoelectric Si0.8-Ge0.2 alloys

White, D. P., Klemens, P. G.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 787 KB

english, 1992

25

On the reduction of hole mobility in strained p-SiGe layers

Manku, T., Jain, S. C., Nathan, A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 405 KB

english, 1992

26

Time-resolved photoluminescence in anodically etched silicon

Pearsall, T. P., Adams, Jeff C., Wu, Jen E., Nosho, Brett Z., Aw, Chak, Patton, J. C.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 882 KB

english, 1992

27

Infrared observation of thermally activated oxide reduction within Al/SiOx/Si tunnel diodes

Brendel, R., Hezel, R.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 849 KB

english, 1992

28

Ultrasound attenuation in quasi-two-dimensional semiconductor quantum-well structures

Rodrigues, C., Nunes, O. A. C.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 477 KB

english, 1992

29

Electro-optical effect in aluminum nitride waveguides

Gräupner, P., Pommier, J. C., Cachard, A., Coutaz, J. L.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 652 KB

english, 1992

30

Interaction between copper and point defects in proton-irradiated silicon

Tamulevicius, S., Svensson, B. G., Aboelfotoh, M. O., Hallén, A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 902 KB

english, 1992

31

Piezoelectrically-induced switching of 90° domains in tetragonal BaTiO3 and PbTiO3 investigated by micro-Raman spectroscopy

Li, Z., Foster, C. M., Dai, X.-H., Xu, X.-Z., Chan, S.-K., Lam, D. J.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.10 MB

english, 1992

32

Simple calculations of energy levels in quantum wells of lattice-matched semiconductors with nonparabolic bands

Hrivnák, Ľ.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 901 KB

english, 1992

33

Temperature and substrate dependence of Ar sputtering of CoSi2 thin films

Hong, Q. Z., Harper, J. M. E.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 946 KB

english, 1992

34

Vacancy supersaturation model for electromigration failure under dc and pulsed dc stress

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 738 KB

english, 1992

35

Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates

Olego, D. J., Okuno, Y., Kawano, T., Tamura, M.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.42 MB

english, 1992

36

Characterization of high-quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques

Pamulapati, J., Bhattacharya, P., Tober, R. L., Loehr, J. P., Singh, J.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 670 KB

english, 1992

37

Scattering loss characteristics of selenide-based chalcogenide glass optical fibers

Katsuyama, Toshio, Satoh, Shin, Matsumura, Hiroyoshi

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 638 KB

english, 1992

38

Diamond deposition in an argon–methane–oxygen plasma

Joeris, P., Benndorf, C., Bohr, S.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 422 KB

english, 1992

39

Passivation induced deep levels in GaInAs PIN planar photodiodes

Ducroquet, F., Guillot, G., Renaud, J. C., Nouailhat, A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 710 KB

english, 1992

40

Li doping of GaAlAs

Zazoui, M., Feng, S. L., Bourgoin, J. C., Powell, A. L., Rockett, P. I., Grattepain, C., Friant, A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 594 KB

english, 1992

41

Multi-shot evolution of laser-induced periodic structure on the surface of polycrystalline silicon-on-insulator

Lee, T. D., Lee, H. W., Nam, C. H., Kim, J. K., Park, C. O.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 752 KB

english, 1992

42

Substrate dependent internal stress in sputtered zinc oxide thin films

Jou, Jwo-Huei, Han, Min-Yung, Cheng, Duen-Jen

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 650 KB

english, 1992

43

Growth of Ge on a Te adsorbed Si(001) surface

Higuchi, S., Nakanishi, Y.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.55 MB

english, 1992

44

Increased thermal generation rate in GaAs due to electron-beam metallization

Stellwag, T. B., Melloch, M. R., Cooper, J. A., Sheppard, S. T., Nolte, D. D.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 996 KB

english, 1992

45

Atomic configurations and local order in laser-synthesized Si, Si-N, Si-C, and Si-C-N nanometric powders, as studied by x-ray-induced photoelectron spectroscopy and extended x-ray-absorption fine-structure analysis

Gheorghiu, A., Sénémaud, C., Roulet, H., Dufour, G., Moreno, T., Bodeur, S., Reynaud, C., Cauchetier, M., Luce, M.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.39 MB

english, 1992

46

Kinetics of light induced metastable defect creation in amorphous silicon: A dispersive excitonic model for the weak bond-dangling bond conversion

Dhariwal, S. R., Deoraj, B. M.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 689 KB

english, 1992

47

Scattering, absorption, and anomalous spectral tuning of 1.3 μm semiconductor diode lasers

Peters, Frank H., Cassidy, Daniel T.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 806 KB

english, 1992

48

Bistable behavior of the dark current in copper-doped semi-insulating gallium arsenide

Roush, R. A., Schoenbach, K. H., Brinkmann, R. P.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 702 KB

english, 1992

49

Phase transformations in nitrogen-implanted α-iron

Kopcewicz, Michal̸, Jagielski, Jacek, Turos, Andrzej, Williamson, D. L.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.36 MB

english, 1992

50

Effect of design variations on the threshold current density of AlxGa1−xAs separate confinement heterostructure single quantum well lasers

Givens, M. E., Miller, L. M., Coleman, J. J.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 968 KB

english, 1992

51

Growth kinetics of tungsten microstructures produced via the hydrogen reduction of tungsten hexafluoride on laser-heated substrates

Auvert, G., Pauleau, Y., Tonneau, D.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.44 MB

english, 1992

52

Beam and hot-spot formation in a low impedance line driven vacuum spark discharge

Wyndham, E., Chuaqui, H., Favre, M., Soto, L., Choi, P.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 720 KB

english, 1992

53

Control of vinylsilane plasma by changing the pressure: Correspondence with a quantum chemical prediction

Sato, Kota, Uchiyama, Akihiko, Iwabuchi, Susumu, Hirano, Tsuneo, Koinuma, Hideomi

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 724 KB

english, 1992

54

The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure

Chen, J. F., Cho, A. Y.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 741 KB

english, 1992

55

Magnesium doping in In0.32Ga0.68P grown by liquid-phase epitaxy

Chen, Chyuan-Wei, Wu, Meng-Chyi, Kuo, Li-Kuang

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 856 KB

english, 1992

56

Extending the calculation of electron velocity distribution functions for electrical discharges to large values of E/N

Richley, Edward

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 866 KB

english, 1992

57

Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices

LeGoues, F. K., Meyerson, B. S., Morar, J. F., Kirchner, P. D.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 2.71 MB

english, 1992

58

Double-stream cyclotron maser

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 688 KB

english, 1992

59

Deep defect states in hydrogenated amorphous silicon studied by a constant photocurrent method

Sakata, I., Yamanaka, M., Numase, S., Hayashi, Y.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.35 MB

english, 1992

60

Structural characterization of SimGen strained layer superlattices

Adams, P. M., Bowman, R. C., Ahn, C. C., Chang, S. J., Arbet-Engels, V., Kallel, M. A., Wang, K. L.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.42 MB

english, 1992

61

Schottky barriers of various metals on Al0.5Ga0.5As0.05Sb0.95 and the influence of hydrogen and sulfur treatments on their properties

Polyakov, A. Y., Stam, M., Milnes, A. G., Bochkarev, A. E., Pearton, S. J.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 684 KB

english, 1992

62

Heteroepitaxial GaAs layers on InP substrates: Radiative recombinations, strain relaxation, structural properties, and comparison with InP layers on GaAs

Olego, D. J., Okuno, Y., Kawano, T., Tamura, M.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1021 KB

english, 1992

63

The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes

Dehm, C., Burte, E. P., Gyulai, J., Zimmermann, H.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 805 KB

english, 1992

64

Impurity effects on the mechanical behavior of GaAs crystals

Yonenaga, Ichiro, Sumino, Koji

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.33 MB

english, 1992

65

Ge-rich Co-Ge contacts to n-type GaAs

Koltin, E., Eizenberg, M.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.26 MB

english, 1992

66

X-ray scattering from interfacial roughness in multilayer structures

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.82 MB

english, 1992

67

Guided-wave optical properties of sol-gel ferroelectric films

Wood, V. E., Busch, J. R., Ramamurthi, S. D., Swartz, S. L.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.40 MB

english, 1992

68

A kinetic model for silicide formation through thin-film metal-silicon reactions

Zhang, Lin, Ivey, Douglas G.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.93 MB

english, 1992

69

Current-controlled electrical switching caused by the combined properties of ferroelectric KH2PO4 and π-conjugated polymer, poly-p-phenylene vinylene

Yamamoto, Hiromichi

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 604 KB

english, 1992

70

Paramagnetic defects in neutron-irradiated GaP

Benchiguer, T., Goltzené, A., Mari, B., Schwab, C.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 585 KB

english, 1992

71

Tunneling through thin oxide interface layers in a-Si:H Schottky diodes

Vink, T. J., Nieuwesteeg, K. J. B. M., Oversluizen, G.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 903 KB

english, 1992

72

Velocity modulation in GaAs/AlxGa1−xAs impact avalanche transit-time diodes

Kearney, M. J., Couch, N. R., Smith, R. S., Stephens, J. S.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 582 KB

english, 1992

73

Optimum operating conditions for an optically pumped CF4 laser amplifier

Sinha, Sucharita

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 787 KB

english, 1992

74

Temperature dependence of resistivity and Hall mobility in floating zone grown bulk silicon-germanium alloys

Kishore, R., Prakash, P., Singh, S. N., Das, B. K.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 555 KB

english, 1992

75

Dielectric properties and complex defect in (Sr1−xBi2/3x)TiO3 ceramics

Chen, Ang, Zhi, Yu

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 599 KB

english, 1992

76

A mechanism for diborane induced selectivity loss in the chemical vapor deposition of silicon from SiH2Cl2

Lapiano-Smith, D. A., McFeely, F. R.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 621 KB

english, 1992

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